Plasma processing apparatus

Abstract

A plasma processing apparatus includes a processing chamber having a ceiling and a sidewall, a susceptor, disposed in the processing chamber, for mounting thereon an object to be processed, a processing gas supply mechanism for supplying a processing gas through the ceiling to generate a plasma, an exhaust plate that is disposed between the susceptor and the sidewall and has a plurality of holes, a gas exhaust unit for exhausting a gas from under the susceptor through the exhaust plate, and a fin structure having plural fins arranged at regular intervals, which is disposed as protruded from the sidewall, at least, in a region extending from a top end portion of the sidewall to a region of a same height as that of a mounting surface of the susceptor for mounting the object thereon.

1 . A plasma processing apparatus, comprising: 
 a processing chamber having a ceiling and a sidewall;    a susceptor, disposed in the processing chamber, for mounting thereon an object to be processed;    a processing gas supply mechanism for supplying a processing gas through the ceiling to generate a plasma;    an exhaust plate that is disposed between the susceptor and the sidewall and has a plurality of holes;    a gas exhaust unit for exhausting a gas from under the susceptor through the exhaust plate; and    a fin structure having plural fins arranged at regular intervals, which is disposed as protruded from the sidewall, at least, in a region extending from a top end portion of the sidewall to a region of a same height as that of a mounting surface of the susceptor for mounting the object thereon.    
   
   
       2 . The plasma processing apparatus of  claim 1 , wherein the exhaust plate includes: 
 a plate-shaped upper part having a plurality of openings;    a plate-shaped lower part having a plurality of openings, which is spaced apart from the upper part thereunder; and    side surfaces that are coupled to the upper part and the lower part to provide an enclosed space,    wherein the upper part, the lower part, and the side surfaces are formed of a conductive material, so that they are electrically connected to each other, thereby having a same potential.    
   
   
       3 . The plasma processing apparatus of  claim 2 , wherein the upper part, the lower part, and the side surfaces are maintained at a ground potential.  
   
   
       4 . The plasma processing apparatus of  claim 3 , wherein the upper part and the lower part are disposed parallel to each other at a specified interval x, the side surfaces are two members disposed parallel to each other at a specified interval y, and x/y and y/x are not integers.  
   
   
       5 . A plasma processing apparatus, comprising: 
 a processing chamber having a ceiling and a sidewall;    a susceptor, disposed in the processing chamber, for mounting thereon an object to be processed;    a processing gas supply mechanism for supplying a processing gas through the ceiling to generate a plasma;    a gas exhaust unit for exhausting a gas from under the susceptor; and    a fin structure having plural fins arranged at regular intervals, which is disposed as protruded from the sidewall in a region extending from a top end portion of the sidewall to a region positioned lower than a mounting surface of the susceptor for mounting the object thereon.    
   
   
       6 . The plasma processing apparatus of  claim 1 , wherein the fin structure is configured such that plural slots are formed in an annular member and capable of being attached to or detached from the ceiling.  
   
   
       7 . The plasma processing apparatus of  claim 1 , wherein a specified gap between neighboring fins of the fin structure is set to be narrower than a width of a plasma sheath formed near the fin structure.  
   
   
       8 . The plasma processing apparatus of  claim 1 , comprising a temperature controlling mechanism for controlling a temperature of the fin structure.  
   
   
       9 . A plasma processing apparatus, comprising: 
 a plasma diffusion preventing member in a processing chamber for generating a plasma,    wherein the plasma diffusion preventing member includes:    a plate-shaped upper part having a plurality of openings, which is disposed at an upper flow side of a plasma diffusion path;    a plate-shaped lower part having a plurality of openings, which is disposed at a lower flow side of the plasma diffusion path; and    side surfaces that are coupled to the upper part and the lower part to provide an enclosed space,    wherein the upper part, the lower part, and the side surfaces are formed of a conductive material, so that they are electrically connected to each other, thereby having a same potential.    
   
   
       10 . The plasma processing apparatus of  claim 9 , wherein the upper part, the lower part, and the side surfaces have a ground potential.  
   
   
       11 . The plasma processing apparatus of  claim 10 , wherein the upper part and the lower part are disposed parallel to each other at a specified interval x, the side surfaces are two members disposed parallel to each other at a specified interval y, and x/y and y/x are not integers.