US2006037628A1PendingUtilityA1

Device and method addressing gas contamination in a wet process

Individually held — no corporate assignee on recordPriority: Sep 30, 1996Filed: Jan 19, 2005Published: Feb 23, 2006
Est. expirySep 30, 2016(expired)· nominal 20-yr term from priority
H10P 72/0426H10P 72/0416H10P 70/15Y10S438/906B01D 19/0068B08B 3/04B08B 3/14Y10S134/902B01D 19/0036
51
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Claims

Abstract

A device for wet processing of a semiconductor-containing substrate addresses contamination in the wet process by removing undesired sources of gas contamination. The method involves pumping a processing liquid through a degasifier, exposing the semiconductor wafer, in a vessel, to the degasified processing liquid; and optionally recirculating the processing liquid through the degasifier and back into the vessel.

Claims

exact text as granted — not AI-modified
1 - 16 . (canceled)  
   
   
       17 . A liquid recirculation apparatus for a cleanroom, comprising: 
 a vessel configured to hold a semiconductor workpiece and to receive a processing fluid;    a tank in fluid communication with said vessel and configured to receive said processing fluid and a gas within said processing fluid; and    a gas-remover within said cleanroom coupled to said tank and said vessel and configured to receive said processing fluid and said gas from said tank and further configured to return said processing fluid to said vessel.    
   
   
       18 . The apparatus of  claim 17 , wherein said tank is further configured to receive a cleanroom gas within said processing fluid.  
   
   
       19 . A wet bench, comprising: 
 a wet-process chemical circulation apparatus; and    a degasifier coupled to said wet-process chemical circulation apparatus, wherein said degasifier defines a portion of said wet bench.    
   
   
       20 - 21 . (canceled)  
   
   
       22 . A semiconductor processor, comprising: 
 a post-gasification tank;    a liquid-degasifying apparatus coupled to said post-gasification tank and within a point-of-use area for a wafer; and    a post-degasification tank coupled to said liquid-degasifying apparatus and in fluid communication with said post-gasification tank, wherein said post-degasification tank is configured to have said wafer therein.    
   
   
       23 . A device for a semiconductor fabrication edifice, comprising: 
 a processing apparatus configured to hold a semiconductor workpiece;    a first conduit configured to carry a liquid and a gas away from said processing apparatus;    a degasifier within said semiconductor fabrication edifice and coupled to said first conduit; and    a second conduit coupled to said degasifier and said processing apparatus, wherein said second conduit is configured to carry said liquid from said degasifier to said processing apparatus.    
   
   
       24 . (canceled)  
   
   
       25 . A method of processing a semiconductor workpiece, comprising: 
 receiving a liquid into a fab;    introducing said liquid to said workpiece; and    passing said liquid through a degasifier in said fab.    
   
   
       26 . The method in  claim 25 , further comprising a step of recirculating said liquid.  
   
   
       27 . The method in  claim 26 , wherein said step of recirculating said liquid comprises: 
 passing said liquid through said degasifier for a second time; and    reintroducing said liquid to said workpiece.    
   
   
       28 . A method of circulating a processing fluid, comprising: 
 exposing said fluid to an atmosphere within a semiconductor fabrication facility;    directing said fluid from said atmosphere to a degasifier within said semiconductor fabrication facility; and    directing said fluid from said degasifier to a workpiece.    
   
   
       29 - 33 . (canceled)  
   
   
       34 . A method of regulating a treatment system for a semiconductor workpiece, comprising: 
 introducing a liquid into said treatment system;    allowing a chemical reaction to occur within said treatment system;    exposing said liquid to a constituent formed from said chemical reaction;    removing said constituent from said liquid at a point proximate to that of said act of exposing; and    directing said liquid toward said semiconductor workpiece.    
   
   
       35 . The method in  claim 34 , further comprising: 
 exposing said liquid to an additional amount of said constituent after said step of directing said liquid;    removing said additional amount of said constituent from said liquid; and    redirecting said liquid toward said semiconductor workpiece.

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