Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process

Abstract

A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.

1 . A semiconductor substrate cleaning liquid composition comprising: 
 one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound;    an inorganic acid; and    water.    
   
   
       2 . The semiconductor substrate cleaning liquid composition according to  claim 1 , wherein the compound having at least two sulfonic acid groups per molecule is a condensate between naphthalenesulfonic acid and formaldehyde.  
   
   
       3 . The semiconductor substrate cleaning liquid composition according to  claim 1 , wherein the inorganic acid is one or more types selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, and perchloric acid.  
   
   
       4 . The semiconductor substrate cleaning liquid composition according to  claim 1 , wherein said one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound is in the range of 0.00001 to 10 mass % as a total.  
   
   
       5 . The semiconductor substrate cleaning liquid composition according to  claim 1 , wherein it further comprises hydrofluoric acid.  
   
   
       6 . A composition comprising: 
 one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound;    an inorganic acid; and    water;    the composition having water further added thereto to give the semiconductor substrate cleaning liquid according to claims  1 .    
   
   
       7 . A process for cleaning a semiconductor substrate, the process comprising: 
 a first step of cleaning the semiconductor substrate using a semiconductor substrate cleaning liquid composition comprising one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water; and, subsequent to the first step,    a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.    
   
   
       8 . The process for cleaning a semiconductor substrate according to  claim 7 , wherein the first step is carried out in two steps comprising a) cleaning with an aqueous solution comprising one or more types of inorganic acid and b) cleaning with an aqueous solution comprising one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound.  
   
   
       9 . The process for cleaning a semiconductor substrate according to  claim 7 , wherein the compound having at least two sulfonic acid groups per molecule is a condensate between naphthalenesulfonic acid and formaldehyde.  
   
   
       10 . The process for cleaning a semiconductor substrate according to  claim 7 , wherein the inorganic acid is one or more types selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, and perchloric acid.  
   
   
       11 . The process for cleaning a semiconductor substrate according to  claim 7 , wherein said one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound is in the range of 0.00001 to 10 mass % as a total.  
   
   
       12 . The process for cleaning a semiconductor substrate according to  claim 7 , wherein the first step is carried out by heating.  
   
   
       13 . The process for cleaning a semiconductor substrate according to  claim 7  wherein, prior to the first step, cleaning is carried out with ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.  
   
   
       14 . The process for cleaning a semiconductor substrate according to  claim 7 , wherein between the first step and the second step cleaning is carried out with pure water.  
   
   
       15 . The process for cleaning a semiconductor substrate according to  claim 7 , wherein prior to the first step, cleaning is carried out with hydrofluoric acid.  
   
   
       16 . The process for cleaning a semiconductor substrate according to  claim 7 , wherein the semiconductor substrate cleaning liquid composition of the first step further comprises hydrofluoric acid.  
   
   
       17 . The process for cleaning a semiconductor substrate according to  claim 7 , wherein the semiconductor substrate cleaning liquid composition of the first step further comprises hydrogen peroxide.  
   
   
       18 . The process for cleaning a semiconductor substrate according to  claim 7 , wherein the process employs a composition obtained by further adding water to the composition comprising one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water.