Method of forming a composite polymer material inside trenches of a semiconductor substrate to form a composite polymer structure

Abstract

A semiconductor substrate structure includes a substrate having a trench formed thereon, a polymer composite material supplied into the trench and an electroplate conductive layer formed on the substrate. Further, a semiconductor substrate processing method includes the steps of: providing a substrate forming a trench thereon, supplying a polymer composite material into the trench, polishing a surface of the substrate and forming a covering material on the surface of the substrate. Therefore, the method is provided for combining the polymer composite material into the substrate, thereby to raise cutting precision and strength of the semiconductor substrate structure.

1 . A method of forming a substrate for increasing cutting precision and strength thereof, comprising the steps of: 
 providing a substrate;    chemically etching a plurality of trenches in the substrate,    filling a polymer composite material into the trenches to form a substrate having a polymer composite structure;    polishing a surface of the polymer composite structure substrate; and    forming a conductive covering material on a surface of the polymer composite structure substrate subsequent to the polishing step.    
   
   
       2 . (canceled)  
   
   
       3 . The method of  claim 1 , wherein the step of filling is preceded by the step of roughing a surface of the substrate by means of a chemical process or a sand-blasting process.  
   
   
       4 . The method of  claim 1 , wherein the step of filling includes the step of applying the polymer composite material using a screen printing process or a steel plate printing process.  
   
   
       5 . The method of  claim 1 , wherein the step of forming a conductive covering material includes the step of electroplating a conductive layer onto a surface of the polymer composite structure substrate.  
   
   
       6 - 9 . (canceled)  
   
   
       10 . The method of  claim 1 , wherein the step of providing a substrate includes the step of providing a semiconductor substrate.