Activated species generator for rapid cycle deposition processes

Abstract

A method for providing activated species for a cyclical deposition process is provided herein. In one aspect, the method includes delivering a gas to be activated into a plasma generator, activating the gas to create a volume of reactive species, delivering a fraction of the reactive species into a processing region to react within a substrate therein, and maintaining at least a portion of the gas remaining in the plasma generator in an activated state after delivering the fraction of the gas into the process region. The plasma generator may include a high density plasma (HDP) generator, a microwave generator, a radio-frequency (RF) generator, an inductive-coupled plasma (ICP) generator, a capacitively coupled generator, or combinations thereof.

1 . A method for forming a material with activated species during a cyclical deposition process, comprising: 
 activating a precursor gas to create reactive species within a plasma generator;    exposing a substrate to a metal precursor within a process region during a first time period;    exposing the substrate to a fraction of the reactive species to form a metal-containing compound during a second time period; and    maintaining at least a portion of the reactive species within the plasma generator in an activated state during the first and second time periods.    
   
   
       2 . The method of  claim 1 , wherein the metal precursor comprises a metal selected from the group consisting of tungsten, tantalum and titanium.  
   
   
       3 . The method of  claim 2 , wherein the metal precursor comprises a tantalum precursor selected from the group consisting of Ta(NMe 2 ) 5  (PDMAT), Ta(NEt 2 ) 5  (PDEAT), Ta(NEtMe) 5  (PEMAT), (Et 2 N) 3 Ta(NBu) (TBTDET), (MeEtN) 3 Ta(NBu) (TBTMET), (Me 2 N) 3 Ta(NBu) (TBTDMT), derivatives thereof and combinations thereof.  
   
   
       4 . The method of  claim 2 , wherein the metal-containing compound comprises a material selected from the group consisting of tungsten, tantalum, titanium, tungsten nitride, tantalum nitride, titanium nitride, titanium silicon nitride, tantalum silicon nitride, alloys thereof, derivatives thereof and combinations thereof.  
   
   
       5 . The method of  claim 1 , wherein first time period lasts for about 1 second or less and the second time period lasts for about 1 second or less.  
   
   
       6 . The method of  claim 5 , wherein first time period lasts for about 0.5 seconds or less and the second time period lasts for about 0.5 seconds or less.  
   
   
       7 . The method of  claim 6 , wherein first time period lasts for about 0.1 seconds or less and the second time period lasts for about 0.1 seconds or less.  
   
   
       8 . The method of  claim 5 , wherein the plasma generator comprises a high density plasma generator, a microwave generator, radio-frequency generator, an inductive-coupled plasma generator, a capacitively coupled generator, derivatives thereof and combinations thereof.  
   
   
       9 . A method for forming a material with activated species during a cyclical deposition process, comprising: 
 activating a first precursor gas to create a volume of reactive species within a plasma generator;    exposing a substrate to a second precursor gas within a process region during a first time period; and    exposing the substrate to a fraction of the reactive species to form a product compound during a second time period.    
   
   
       10 . The method of  claim 9 , wherein at least a portion of the reactive species is maintained within the plasma generator in an activated state during the first and second time periods.  
   
   
       11 . The method of  claim 9 , wherein the second precursor gas comprises a metal.  
   
   
       12 . The method of  claim 11 , wherein the metal is selected from the group consisting of tungsten, tantalum and titanium.  
   
   
       13 . The method of  claim 12 , wherein the product compound comprises a material selected from the group consisting of tungsten, tantalum, titanium, tungsten nitride, tantalum nitride, titanium nitride, titanium silicon nitride, tantalum silicon nitride, alloys thereof, derivatives thereof and combinations thereof.  
   
   
       14 . The method of  claim 9 , wherein first time period lasts for about 1 second or less and the second time period lasts for about 1 second or less.  
   
   
       15 . The method of  claim 14 , wherein first time period lasts for about 0.5 seconds or less and the second time period lasts for about 0.5 seconds or less.  
   
   
       16 . The method of  claim 15 , wherein first time period lasts for about 0.1 seconds or less and the second time period lasts for about 0.1 seconds or less.  
   
   
       17 . The method of  claim 14 , wherein the plasma generator comprises a high density plasma generator, a microwave generator, radio-frequency generator, an inductive-coupled plasma generator, a capacitively coupled generator, derivatives thereof and combinations thereof.  
   
   
       18 . A method for forming a material with activated species during a cyclical deposition process, comprising: 
 activating a precursor gas to create reactive species within a plasma generator;    exposing a substrate to a tantalum precursor within a process region during a first time period; and    exposing the substrate to a fraction of the reactive species to form a tantalum-containing layer during a second time period.    
   
   
       19 . The method of  claim 18 , wherein the tantalum precursor comprises a compound selected from the group consisting of Ta(NMe 2 ) 5  (PDMAT), Ta(NEt 2 ) 5  (PDEAT), Ta(NEtMe) 5  (PEMAT), (Et 2 N) 3 Ta(NBu) (TBTDET), (MeEtN) 3 Ta(NBu) (TBTMET), (Me 2 N) 3 Ta(NBu) (TBTDMT), derivatives thereof and combinations thereof.  
   
   
       20 . The method of  claim 18 , wherein the precursor gas comprises a nitrogen-containing compound.  
   
   
       21 . A method for forming a material with activated species during a cyclical deposition process, comprising: 
 positioning a substrate within a process region;    activating a precursor gas to create a volume of ionic species within a plasma generator;    exposing the substrate to a precursor compound to form a precursor layer thereon;    purging the process region with a purge gas;    flowing a fraction of the ionic species from the plasma generator to the process region;    exposing the precursor layer to the fraction of the ionic species to form a product compound thereon; and    purging the process region with the purge gas.    
   
   
       22 . The method of  claim 21 , wherein at least a portion of the ionic species is maintained within the plasma generator in an activated state during the exposing and purging steps.  
   
   
       23 . A method for forming a material with activated species during a cyclical deposition process, comprising: 
 positioning a substrate within a process region;    activating a precursor gas to create a volume of ionic species within a plasma generator;    flowing a fraction of the ionic species from the plasma generator to the process region; and    forming a product compound by repeating a deposition cycle comprising exposing the substrate sequentially to a precursor compound, a purge gas, the fraction of the ionic species and the purge gas.    
   
   
       24 . The method of  claim 23 , wherein at least a portion of the ionic species is maintained within the plasma generator in an activated state during the deposition cycle.  
   
   
       25 . An apparatus for generating and delivering activated species during a cyclical deposition process, comprising: 
 a process chamber containing a process region between a substrate support pedestal and a lid assembly;    a plasma generator positioned to fluidly communicate with the process region, wherein the plasma generator comprises a high density plasma generator, a microwave generator, radio-frequency generator, an inductive-coupled plasma generator, a capacitively coupled generator, derivatives thereof and combinations thereof;    a volume of ionic species within the plasma generator; and    a fraction of the ionic species within the process region.    
   
   
       26 . The apparatus of  claim 25 , further comprising a gas manifold attached to the lid assembly, wherein the gas manifold contains at least one valve capable of providing gas pulses of about 1 second or less.  
   
   
       27 . The apparatus of  claim 26 , wherein the at least one valve is capable of providing gas pulses of about 0.5 seconds or less.  
   
   
       28 . The apparatus of  claim 27 , wherein the at least one valve is capable of providing gas pulses of about 0.1 seconds or less.  
   
   
       29 . The apparatus of  claim 26 , wherein the plasma generator is extending externally from the process chamber.  
   
   
       30 . The apparatus of  claim 26 , wherein the plasma generator is formed integrally within the process chamber.  
   
   
       31 . The apparatus of  claim 26 , further comprising at least one precursor source in fluid communication to the gas manifold.  
   
   
       32 . The apparatus of  claim 31 , wherein a vaporizer is positioned between the at least one precursor source and the gas manifold.  
   
   
       33 . The apparatus of  claim 32 , wherein the at least one precursor source contains a tantalum precursor selected from the group consisting of Ta(NMe 2 ) 5  (PDMAT), Ta(NEt 2 ) 5  (PDEAT), Ta(NEtMe) 5  (PEMAT), (Et 2 N) 3 Ta(NBu) (TBTDET), (MeEtN) 3 Ta(NBu) (TBTMET), (Me 2 N) 3 Ta(NBu) (TBTDMT), derivatives thereof and combinations thereof.  
   
   
       34 . The apparatus of  claim 31 , wherein the process chamber comprises a ceramic liner assembly.  
   
   
       35 . The apparatus of  claim 26 , wherein a vaporizer is positioned intermediate a first precursor source containing a tantalum precursor and a first valve and the plasma generator is intermediate a second precursor source containing ammonia and a second valve.