US2006033901A1PendingUtilityA1
Exposure apparatus and method for manufacturing device
Est. expiryApr 7, 2023(expired)· nominal 20-yr term from priority
Inventors:Hideaki Hara
G03F 7/70341G03B 27/42G03F 7/70716G03F 7/2041
52
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Claims
Abstract
An exposure apparatus wherein an image of a pattern is projected onto a substrate via a projection optical system to expose the substrate, includes: a substrate moving device that is movable while holding the substrate above the projection optical system; and a liquid immersion unit that fills at least a portion of the space between the projection optical system and the substrate with a liquid, wherein the image of the pattern is projected onto the substrate via the projection optical system and the liquid.
Claims
exact text as granted — not AI-modified1 . A liquid immersion photolithography system comprising:
an exposure system that exposes a substrate with electromagnetic radiation and includes a projection optical system that focuses the electromagnetic radiation on the substrate; and a liquid supply system that provides a liquid between the projection optical system and the substrate, wherein the projection optical system is positioned below the substrate.
2 . The liquid immersion photolithography system of claim 1 , wherein the liquid supply system is adapted to form a liquid meniscus above the projection optical system.
3 . The liquid immersion photolithography system of claim 1 , wherein the liquid supply system is adapted to form a fountainhead above the projection optical system.
4 . The liquid immersion photolithography system of claim 1 , wherein the projection optical system includes a housing with at least one catch basin positioned to capture stray liquid.
5 . The liquid immersion photolithography system of claim 1 , further comprising:
a housing in which a plurality of lenses are mounted; and an opening to allow the electromagnetic radiation from the projection optical system to be imaged on the substrate and to allow contact between the liquid and the substrate.
6 . The liquid immersion photolithography system of claim 1 , wherein the electromagnetic radiation is 193 nanometers.
7 . The liquid immersion photolithography system of claim 1 , wherein the electromagnetic radiation is 157 nanometers.
8 . The liquid immersion photolithography system of claim 1 , wherein the electromagnetic radiation is 435 nanometers.
9 . The liquid immersion photolithography system of claim 1 , wherein the electromagnetic radiation is 405 nanometers.
10 . The liquid immersion photolithography system of claim 1 , wherein the electromagnetic radiation is 365 nanometers.
11 . The liquid immersion photolithography system of claim 1 , wherein the electromagnetic radiation is 248 nanometers.
12 . A liquid immersion photolithography system comprising:
an exposure system that exposes a substrate and includes a projection optical system; and means for providing a liquid between the projection optical system and the substrate, wherein the projection optical system is positioned below the substrate.
13 . The liquid immersion photolithography system of claim 12 , wherein the means for providing a liquid is adapted to form a liquid meniscus above the projection optical system.
14 . The liquid immersion photolithography system of claim 12 , wherein the means for providing a liquid is adapted to form a fountainhead above the projection optical system.
15 . The liquid immersion photolithography system of claim 12 , wherein the projection optical system includes a housing with at least one catch basin positioned to capture stray liquid.
16 . The liquid immersion photolithography system of claim 12 , further comprising:
a housing in which a plurality of lenses are mounted; an opening to allow an exposure light beam from the projection optical system to be imaged on the substrate and to allow contact between the liquid and the substrate.
17 . The liquid immersion photolithography system of claim 12 , wherein the electromagnetic radiation is 193 nanometers.
18 . The liquid immersion photolithography system of claim 12 , wherein the electromagnetic radiation is 157 nanometers.
19 . The liquid immersion photolithography system of claim 12 , wherein the electromagnetic radiation is 435 nanometers.
20 . The liquid immersion photolithography system of claim 12 , wherein the electromagnetic radiation is 405 nanometers.
21 . The liquid immersion photolithography system of claim 12 , wherein the electromagnetic radiation is 365 nanometers.
22 . The liquid immersion photolithography system of claim 12 , wherein the electromagnetic radiation is 248 nanometers.
23 . A liquid immersion photolithography system comprising:
an exposure system that includes a projection optical system; and a liquid supply system adapted for providing a liquid between the projection optical system and the substrate, wherein the projection optical system is adapted for positioning below the substrate.
24 . A liquid immersion photolithography system comprising:
an exposure system that includes a projection optical system; and a liquid supply system adapted for providing a liquid between the projection optical system and the substrate, wherein the liquid supply system is adapted for forming a liquid meniscus above the projection optical system.
25 . The liquid immersion photolithography system of claim 24 , wherein the projection optical system is adapted for positioning below the substrate.
26 . The liquid immersion photolithography system of claim 24 , wherein the projection optical system includes a housing with at least one catch basin adapted to capture stray liquid.
27 . The liquid immersion photolithography system of claim 24 , further comprising:
a housing in which a plurality of lenses are mounted; and an opening to allow an exposure light beam from the projection optical system to be imaged on the substrate and to allow contact between the liquid and the substrate.
28 . A method of exposing a substrate comprising:
positioning a projection optical system below the substrate; projecting electromagnetic radiation onto the substrate using a projection optical system; and delivering a liquid between the projection optical system and the substrate.
29 . The method of claim 28 , further comprising removing excess liquid from the substrate using at least one catch basin.
30 . The method of claim 28 , further comprising forming a liquid meniscus between the projection optical system and the substrate.Join the waitlist — get patent alerts
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