Process for producing silicon

Abstract

There is provided a production process of silicon that can reutilize a receiving vessel without breaking of the receiving vessel and does not cause inclusion of impurities in silicon from the receiving vessel in contact with molten silicon. The production process of silicon comprises the steps of: depositing silicon in a solid state or molten state by contacting gas mixture of hydrogen and silanes to the surface having the temperature range of 600 to 1700° C.; melting a part or the whole of the deposited silicon, dropping the melt from a deposition surface, and receiving the dropped molten silicon in a receiving vessel, wherein said receiving vessel comprises a silicon bottom plate member(s) and a plurality of silicon side plate members that are installed upright direction from the peripheral part of the bottom plate member.

1 . A process for producing silicon, comprising the steps of: 
 depositing silicon in a solid state or molten state by contacting gas mixture of hydrogen and silanes to a deposition surface having a temperature range of 600 to 1700° C.;    melting a part or the whole of the deposited silicon to provide a melt of silicon on the deposition surface;    dropping the melt from the deposition surface, and receiving the dropped molten silicon in a receiving vessel, wherein    said receiving vessel    comprises at least one silicon bottom plate member and a plurality of silicon side plate members that are installed in an upright direction around a peripheral part of the bottom plate member(s).    
   
   
       2 . The process for producing silicon according to  claim 1 , wherein a frame body is provided around said receiving vessel.  
   
   
       3 . The process for producing silicon according to  claim 1 , wherein crushed pieces of silicon block are mounted on the bottom plate member.  
   
   
       4 . The process for producing silicon according to  claim 2 , wherein crushed pieces of silicon block are mounted on the bottom plate member.