Protective coating on a substrate and method of making thereof

Abstract

Disclosed herein is a protective coating having a compressive stress of less than 280 Mpa, for devices to be used in a corrosive environment such as halogen containing gases or halogen plasma atmosphere, e.g., wafer supporting device for use in semi-conductor processing assemblies such as electrostatic chucks, heaters, etc. The protective coating in one embodiment is crack-free, with a compressive stress of less than 250 Mpa. It is deposited onto at least one surface of the device via an ion-plating process, in which the Ar flow is kept below 5 sccm, and one embodiment, at 0 sccm, for a crack-free protective layer.

1 . A protective layer for coating at least a surface of an article for use in a halogen-containing gas and/or plasma environment, 
 wherein said at least a surface comprises one of pyrolytic boron nitride, graphite, pyrolytic graphite, and combinations thereof,    wherein the protective layer has a compressive stress of less than 280 Mpa.    
     
     
         2 . The protective layer of  claim 1 , wherein the protective layer has a compressive stress of less than 250 Mpa.  
     
     
         3 . The protective layer of  claim 1 , wherein the protective layer comprises one of aluminum nitride, aluminum oxynitride, and combinations thereof.  
     
     
         4 . The protective layer of  claim 1 , wherein the protective layer is deposited onto said at least a surface of an article via an ion plating method.  
     
     
         5 . The protective layer of  claim 4 , wherein the protective layer is deposited onto said at least a surface of an article via an ion plating method.  
     
     
         6 . The protective layer of  claim 5 , wherein ion plating method includes Argon as a non-reactive gas.  
     
     
         7 . The protective layer of  claim 6 , wherein the Argon flow rate is kept below a rate of 10 sccm.  
     
     
         8 . The protective layer of  claim 7 , wherein the Argon flow rate is kept below a rate of 5 sccm.  
     
     
         9 . The protective layer of  claim 1 , wherein at least a surface comprises pyrolytic boron nitride.  
     
     
         10 . The protective layer of  claim 1 , wherein the protective layer comprises aluminum nitride.  
     
     
         11 . The protective layer of  claim 1 , wherein the protective layer has a thickness in the range between 3 μm to 200 μm.  
     
     
         12 . The protective coating layer of  claim 1 , wherein the protective layer is substantially crack-free.  
     
     
         13 . The protective coating layer of  claim 1 , wherein the layer has an etch resistance rate of less than 50 Angstroms per minute upon exposure to a halogen-containing gas and/or plasma environment.  
     
     
         14 . The protective coating layer of  claim 13 , wherein the layer has an etch resistance rate of less than 40 Angstroms per minute upon exposure to a fluorine-containing gas and/or plasma environment.  
     
     
         15 . An article comprising a protective coating layer on at least one of its surfaces, said coating layer comprises at least one of aluminum nitride, aluminum oxynitride or combinations thereof, 
 and wherein the coating layer is substantially crack free when said article is exposed to fluorine containing gases and/or plasma.    
     
     
         16 . The article of  claim 13 , wherein the protective coating layer has a compressive stress of less than 280 Mpa.  
     
     
         17 . A method for modifying the in-film stress in a protective coating layer of an article for use in a halogen-containing gas and/or plasma environment, said method comprising: 
 depositing a protective coating layer on at least one surface of the article, said coating layer comprising at least one of aluminum nitride, carbon and/or oxygen doped aluminum nitride, aluminum oxynitride or combinations thereof,    said at least one surface comprises at least one of pyrolytic boron nitride, pyrolytic graphite and/or carbon doped boron nitride, and combinations thereof;    wherein said protective coating layer is substantially crack free upon exposure to said halogen-containing gas and/or plasma environment.    
     
     
         18 . The method of  claim 17 , wherein the deposited coating layer has a compressive stress of less than 280 Mpa.  
     
     
         19 . The method of  claim 17 , wherein the protective coating layer is deposited on said at least one surface via an ion plating method.  
     
     
         20 . The method of  claim 19 , wherein the ion plating method includes Ar as a non-reactive gas, and wherein the Ar gas flow rate is maintained at an average of less than 10 sccm.  
     
     
         21 . The method of  claim 17 , wherein the protective coating layer has an adhesion strength which exceeds the cohesive strength of the surface protected by said coating layer.  
     
     
         22 . The method of  claim 17 , wherein said at least one surface of the article is first protected by depositing at least a layer of pyrolytic boron nitride, pyrolytic graphite and/or carbon doped boron nitride on said surface.  
     
     
         23 . An article manufactured the method of claim  28 .  
     
     
         24 . The protective layer of  claim 1 , wherein the layer is a multilayer.  
     
     
         25 . The protective layer of  claim 1 , wherein the protective coating layer has an adhesion strength which exceeds the cohesive strength of the surface protected by said coating layer.