Using deuterated source gasses to fabricate low loss GeSiON SiON waveguides

Abstract

The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a chemical vapor deposition (CVD) process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.

1 . A method of manufacturing optical devices comprising: 
 providing a substrate; and    forming at least one optical layer on said substrate by a CVD process including at least one deuterated source gas.    
   
   
       2 . The method of  claim 1 , wherein the deuterated source gas is selected from the group consisting of deuterated ammonia, deuterated silane, deuterated disilane and deuterated germane.  
   
   
       3 . The method of  claim 2 , wherein the source gas is partially deuterated.  
   
   
       4 . The method of  claim 1 , wherein the CVD process is selected from the group consisting of APCVD, LPCVD and PECVD.  
   
   
       5 . The method of  claim 1 , wherein said step of forming at least one optical layer includes forming an optical layer with a wavelength of an overtone about 2004 nm.  
   
   
       6 . The method of  claim 1 , wherein said step of forming at least one optical layer includes forming an optical layer with an index of refraction between 1.45 and 2.2.  
   
   
       7 . The method of  claim 6 , wherein said step of forming at least one optical layer includes forming an optical layer with an index of refraction between 1.6 and 1.8.  
   
   
       8 . The method of  claim 1 , wherein said step of forming at least one optical layer includes forming a layer of silicon oxynitride.  
   
   
       9 . The method of  claim 1 , wherein said step of forming at least one optical layer includes forming a layer of germanium doped silicon oxynitride.  
   
   
       10 . The method of  claim 1 , wherein said optical layer exhibits propagation losses below 4 dB/cm.  
   
   
       11 . The method of  claim 1 , wherein said optical layer exhibits propagation losses below 0.2 dB/cm.  
   
   
       12 . The method of  claim 8 , wherein said optical layer exhibits propagation losses below 4 dB/cm.  
   
   
       13 . The method of  claim 8 , wherein said optical layer exhibits propagation losses below 0.2 dB/cm.  
   
   
       14 . The method of  claim 8 , further comprising: 
 forming a cladding layer.    
   
   
       15 . The method of  claim 14 , wherein said cladding layer comprises silicon oxynitride, deuterated silicon oxynitride or deuterated germanium doped silicon oxynitride.  
   
   
       16 . The method of  claim 14 , further comprising: 
 forming a buffer layer.    
   
   
       17 . The method of  claim 16 , wherein said buffer layer is either silicon oxynitride, deuterated silicon oxynitride or deuterated germanium doped silicon oxynitride.  
   
   
       18 . The method of  claim 16 , wherein the buffer layer is selected from the group consisting of FSG, PSG and BPSG.  
   
   
       19 - 34 . (canceled)