Article for polishin substrate surface

Abstract

An article for polishing a surface of a semiconductor workpiece is provided. The article includes a polishing layer and a plurality of protrusions repeating across the polishing layer. The protrusions include abrasive particles and can be elastically deformed while polishing the surface of the wafer.

1 . An article for polishing a surface of a semiconductor workpiece, comprising: 
 a polishing layer having a plurality of protrusions repeating across the polishing layer, the protrusions including abrasive particles and being capable of elastically deforming while polishing the surface of the wafer, wherein the abrasive particles are dispersed homogeneously across the polishing layer.    
     
     
         2 . The article of  claim 1 , wherein the protrusions have a modulus of elasticity in the range of 0.5 to 1.5 GPa.  
     
     
         3 . The article of  claim 1 , wherein the protrusions have a yield point at 5%-50% deformation.  
     
     
         4 . The article of  claim 1 , wherein the polishing layer and the protrusions are made of the same material.  
     
     
         5 . A web including the article of  claim 1 .  
     
     
         6 . A polishing pad including the article of  claim 1 .  
     
     
         7 . The article of  claim 1 , wherein the plurality of protrusions includes a majority protrusions and minority protrusions.  
     
     
         8 . The article of  claim 7 , wherein the majority protrusions have a predetermined height and minority protrusions are taller than the predetermined height.  
     
     
         9 . The article of  claim 8 , wherein during the polishing of the surface, the minority protrusions are elastically deformed down to the predetermined height of the majority protrusions.  
     
     
         10 . A method of polishing a surface of a wafer during a process using a polishing article having a surface including elastic protrusions containing abrasive particles, comprising: 
 establishing relative motion between the polishing article and the wafer;    pressing the surface of the wafer on the protrusions such that ends of the protrusions are elastically deformed, wherein the abrasive particles are dispersed uniformly across the surface of the polishing article; and    polishing the surface of the wafer.    
     
     
         11 . The method of  claim 10 , wherein the step of pressing includes applying a pressure about 0.5 psi.  
     
     
         12 . The method of  claim 10 , wherein the process is chemical mechanical polishing.  
     
     
         13 . The method of  claim 10 , wherein the process is electrochemical mechanical polishing.  
     
     
         14 . The method of  claim 10 , wherein the process is electrochemical mechanical deposition.