US2005282397A1PendingUtilityA1

Semiconductor constructions

47
Individually held — no corporate assignee on recordPriority: Jun 26, 2003Filed: Aug 18, 2005Published: Dec 22, 2005
Est. expiryJun 26, 2023(expired)· nominal 20-yr term from priority
Inventors:Donald L. Yates
H10P 50/694H10P 76/2041G03F 7/095
47
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

The invention includes semiconductor processing patterning methods and semiconductor constructions. A semiconductor processing patterning method includes forming a second composition resist layer over a different first composition resist layer. Overlapping portions of the first and second composition resist layers are exposed to actinic energy effective to change solubility of the exposed portions versus the unexposed portions of each of the first and second composition resist layers in a developer solution. The first and second composition resist layers are developed with the developer solution under conditions effective to remove the exposed portions of the first composition resist layer at a faster rate than removing the exposed portions of the second composition resist layer. Additional aspects and implementations are contemplated.

Claims

exact text as granted — not AI-modified
1 - 57 . (canceled)  
   
   
       58 . A semiconductor construction comprising a semiconductor substrate having a patterned resist mask received thereon, the resist mask comprising a first composition resist portion and a different second composition resist portion received over the first composition resist portion, the first composition resist portion having opposing sidewalls in at least one cross section and the second composition resist portion having opposing sidewalls in the one cross section, at least a portion of the opposing sidewalls of the first composition resist portion being recessed laterally inward of at least a portion of the opposing sidewalls of the second composition resist portion.  
   
   
       59 . The semiconductor construction of  claim 58  wherein the second composition resist portion is received on the first composition resist portion.  
   
   
       60 . The semiconductor construction of  claim 58  wherein both the first composition resist portion and the second composition resist portion comprise negative resist.  
   
   
       61 . The semiconductor construction of  claim 58  wherein both the first composition resist portion and the second composition resist portion comprise positive resist.  
   
   
       62 . The semiconductor construction of  claim 58  wherein the first composition resist portion has a thickness which is less than a thickness of the second composition resist portion.  
   
   
       63 . The semiconductor construction of  claim 58  wherein the first composition resist portion has a thickness which is less than a total thickness of all layers received over the first composition resist portion.  
   
   
       64 . The semiconductor construction of  claim 58  wherein the first composition resist portion has a thickness which is less than or equal to about 50% of a total thickness of the first composition resist portion and all layers received over the first composition resist portion.  
   
   
       65 . The semiconductor construction of  claim 58  wherein the first composition resist portion has a thickness which is less than or equal to about 25% of a total thickness of the first composition resist portion and all layers received over the first composition resist portion.  
   
   
       66 . The semiconductor construction of  claim 58  wherein the first composition resist portion has a thickness which is less than or equal to about 10% of a total thickness of the first composition resist portion and all layers received over the first composition resist portion.  
   
   
       67 . The semiconductor construction of  claim 58  wherein the first composition resist portion has a thickness which is less than or equal to about 5% of a total thickness of the first composition resist portion and all layers received over the first composition resist portion.  
   
   
       68 . The semiconductor construction of  claim 58  wherein the opposing sidewalls of the first composition resist portion are at least partially curved in the one cross section.  
   
   
       69 . The semiconductor construction of  claim 58  wherein the opposing sidewalls of the first composition resist portion and the opposing sidewalls of the second composition resist portion are of different shapes in the one cross section.  
   
   
       70 . The semiconductor construction of  claim 58  wherein an entirety of the opposing sidewalls of the first composition resist portion in the one cross section are recessed laterally inward of the opposing sidewalls of the second composition resist portion in the one cross section.

Join the waitlist — get patent alerts

Track US2005282397A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.