Plasma processing apparatus and method, and plasma control unit

Abstract

[Object] It is an object of the present invention to readily replace a plasma control member disposed to surround a substrate to control plasma in case of plasmarizing a processing gas in the processing vessel by using a high frequency power and performing a substrate on a susceptor by using the plasma. [Constitution of the Invention] A plasma control sheet whose, e.g., rear surface is coated with an adhesive is detachably attached to a ring member provided to surround a substrate mounted on a susceptor. In this case, attachment/detachment of the sheet is carried out with ease so that the burden of an operator is decreased and an operation rate of the apparatus is increased.

1 . A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power to perform a process on a substrate mounted on a susceptor by using the plasma in a processing vessel, the apparatus comprising: 
 a ring member disposed to surround the substrate on the susceptor;    a plasma control sheet disposed on a surface of the ring member; and    an adhesion layer, interposed between the ring member and the plasma control sheet, for allowing the plasma control sheet to be detachably attached to the ring member.    
   
   
       2 . The apparatus of  claim 1 , wherein the adhesion layer is an adhesive coated on a rear surface of the plasma control sheet.  
   
   
       3 . The apparatus of  claim 1  or  2 , wherein the plasma control sheet contains a material for dissociating a component which reacts with a primary active species for the plasma processing.  
   
   
       4 . The apparatus of any one of  claims 1  to  3 , wherein the plasma includes chlorine radicals and the plasma control sheet is formed of an organic resin.  
   
   
       5 . The apparatus of  claim 4 , wherein the plasma control sheet is a polyimide sheet.  
   
   
       6 . The apparatus of any one of  claims 1  to  5 , wherein tungsten or tungsten silicide surface layer on the substrate is etched by the plasma.  
   
   
       7 . A plasma control member for use in a plasma processing apparatus for converting a processing gas into a plasma by a high frequency power to perform a process on a substrate mounted on a susceptor by using the plasma in a processing vessel, the member comprising: 
 a ring member disposed to surround the substrate on the susceptor;    a plasma control sheet disposed on a surface of the ring member; and    an adhesion layer, interposed between the ring member and the plasma control sheet, for allowing the plasma control sheet to be detachably attached to the ring member.    
   
   
       8 . The plasma control member of  claim 7 , wherein the adhesion layer is an adhesive coated on a rear surface of the plasma control sheet.  
   
   
       9 . The plasma control member of  claim 7  or  8 , wherein the plasma control sheet is formed of an organic resin.  
   
   
       10 . The plasma control member of  claim 9 , wherein the plasma control sheet is a polyimide sheet.  
   
   
       11 . A plasma processing method using a plasma processing apparatus including a ring member disposed to surround a susceptor in a processing vessel, the ring member having a plasma control sheet attached on a surface thereof via an adhesion layer, the method comprising the steps of: 
 loading a substrate on the susceptor;    supplying a processing gas into the processing vessel, converting the processing gas into a plasma by a high frequency power and processing the substrate by using the plasma; and    peeling the plasma control sheet off the ring member and replacing the plasma control sheet with a new one.    
   
   
       12 . The method of  claim 11 , wherein the plasma control sheet contains a material for dissociating a component which reacts with a primary active species for the plasma processing.  
   
   
       13 . The method of  claim 11  or  12 , wherein the plasma includes chlorine radicals and the plasma control sheet is formed of an organic resin.  
   
   
       14 . The method of  claim 13 , wherein the plasma control sheet is a polyimide sheet.  
   
   
       15 . The method of any one of  claims 11  to  14 , wherein tungsten or tungsten silicide surface layer on the substrate is etched by the plasma.