Etching reaction device with protrusions

Abstract

An etching reaction device ( 3 ) includes an etching reaction chamber ( 30 ), and a number of protrusions ( 301 ) arranged on the bottom of the etching reaction chamber. Thus it can economize the etching time and quickly complement the concentration of the etching liquid near to a wafer ( 7 ). The protrusions can reduce the capability of the etching reaction chamber, thus it can economize the etching liquid.

1 . An etching reaction device, comprising: 
 an etching reaction chamber; and    a plurality of protrusions arranged on a bottom of the etching reaction chamber.    
   
   
       2 . The etching reaction device as claimed in  claim 1 , further comprising an etching liquid entrance associated with the bottom of the etching reaction chamber.  
   
   
       3 . The etching reaction device as claimed in  claim 2 , further comprising an etching liquid transport pipe connected with the etching liquid entrance.  
   
   
       4 . The etching reaction device as claimed in  claim 1 , further comprising a plurality of rollers in the etching reaction chamber.  
   
   
       5 . The etching reaction device as claimed in  claim 1 , wherein the protrusions are made of polyvinylidene difluoride.  
   
   
       6 . The etching reaction device as claimed in  claim 1 , wherein the protrusions are step-shaped.  
   
   
       7 . The etching reaction device as claimed in  claim 1 , wherein the protrusions are columnar.  
   
   
       8 . The etching reaction device as claimed in  claim 1 , wherein the protrusions tapered in cross-section.  
   
   
       9 . The etching reaction device as claimed in  claim 1 , wherein the protrusions are triangular in cross-section.  
   
   
       10 . The etching reaction device as claimed in  claim 1 , wherein the protrusions are rectangular in cross-section.  
   
   
       11 . A method of making etching comprising: 
 providing an etching device with an etching reaction chamber;    forming a plurality of protrusions on at least one interior surface of said etching device in communication with the etching reaction chamber; and    injecting etching liquid into the chamber; wherein    said protrusions performs at least one of functions of even distribution and convection.    
   
   
       12 . The method as claimed in  claim 11 , wherein the protrusions surround a liquid entrance of said etching liquid.  
   
   
       13 . The method as claimed in  claim 11 , wherein the protrusions and a liquid entrance of the etching liquid are located on a same interior face of the etching device.  
   
   
       14 . The method as claimed in  claim 13 , wherein a wafer ready for etching is spatially located above both said liquid entrance and said protrusions.  
   
   
       15 . An etching reaction device, comprising: 
 an etching reaction chamber;    a plurality of protrusions disposed in the etching reaction chamber; and    a wafer located above said protrusions; wherein    etching liquid moves in said chamber under effects derived from said protrusions.    
   
   
       16 . The etching reaction device as claimed in  claim 15 , wherein said protrusions are formed on a bottom interior face of the etching device.  
   
   
       17 . The etching reaction device as claimed in  claim 16 , wherein an etching liquid entrance is located on the bottom interior face.