Method for forming a plane structure

Abstract

A method for forming a plane structure. It comprises the following steps: forms a liquid material with a thicker thickness on a substrate, rotating both the liquid material and the substrate around the axis of the substrate, applying a solvent on the rotating liquid material to remove partial liquid material. It also comprises the following steps: form a thicker removable material on a substrate, and partially remove the surface part of the removable material.

1 - 8 . (canceled)  
   
   
       9 . A method for forming a plane structure, comprising: 
 providing a substrate;    forming a liquid material on said substrate; and    treating said liquid material by a spin-etch process with a etch uniformity not larger than 10 percents, wherein said etch uniformity equals a ratio of a thickness difference between a maximum thickness and a minimum thickness of said liquid material and said maximum thickness of said liquid material.    
   
   
       10 . The method of  claim 9 , a pattern structure being formed on said substrate before said liquid material is formed.  
   
   
       11 . The method of  claim 10 , said pattern structure being thicker than said liquid material.  
   
   
       12 . The method of  claim 9 , said spin-etch process rotating both said substrate and said liquid material around an axis of said substrate and applying a solvent on said liquid material to remove partial said liquid material simultaneously.  
   
   
       13 . The method of  claim 9 , said liquid material being chosen from the group consisting of the following: resin, synthetic resin, photoresist, polymer, low dielectric constant dielectric material, and photoresist without acid.  
   
   
       14 . The method of  claim 9 , said solvent being chosen from the group consisting of the following: developer, acid, and alkali.  
   
   
       15 . The method of  claim 9 , further comprising the step of rotating said substrate around said axis before said liquid is formed on said substrate.  
   
   
       16 . The method of  claim 9 , said solvent being directly applied on said axis of said substrate during said spin-etch process.