Semiconductor device and fabricating method thereof

Abstract

A semiconductor device and method of manufacturing the same are disclosed. A conductive structure, spacers and a dielectric layer are formed on a substrate. Thereafter, a portion of the cap layer, a portion of the spacers and a portion of the dielectric layer of the conductive structure are removed to form a funnel-shaped opening. The shoulder section of the conductive layer exposed by the funnel-shaped opening is removed to form a shoulder recess. A liner layer is formed on the sidewall of the funnel-shaped opening and then a bottom plug is formed inside the funnel-shaped opening. Another dielectric layer is formed over the substrate. A top plug is formed in the dielectric layer such that the top plug and the bottom plug are electrically connected. Finally, a wire line is formed over the substrate.

1 . A semiconductor device, comprising: 
 a substrate;    a plurality of conductive structures formed on the substrate;    a plurality of bottom plugs set up between neighboring conductive structures and electrically connected to the substrate;    a liner layer set up between the neighboring conductive structures and the conductive bottom plugs;    a plurality of top plugs set up over the respective bottom plugs, wherein the junction portion of the bottom plug connected to the top plug has a critical dimension greater than the top plug;    a plurality of wire lines connected electrically to the respective top plugs; and    a dielectric layer set up between the conductive structure, between the bottom plugs and between the top plugs and between the wire lines.    
   
   
       2 . The semiconductor device of  claim 1 , wherein the bottom plug is a solid block with a funnel shape.  
   
   
       3 . The semiconductor device of  claim 1 , wherein the top plug is a solid block with a cylindrical shape.  
   
   
       4 . The semiconductor device of  claim 1 , wherein each conductive structure further comprises a conductive layer with a shoulder recess.  
   
   
       5 . A semiconductor device, comprising: 
 a substrate;    a plurality of conductive structures on the substrate with each conductive structure comprising a conductive layer and a cap layer, wherein the conductive layer of every pair of neighboring conductive structures has a recess shoulder;    a plurality of conductive plugs set up between neighboring conductive structures and electrically connected to the substrate; and a liner layer set up between neighboring conductive structures and the conductive plugs.    
   
   
       6 . The semiconductor device of  claim 5 , wherein the conductive plug is a solid block with a funnel shape.