Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device according to the present invention comprises a semiconductor substrate, a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film, the upper electrode including metal oxide formed of ABO 3 perovskite oxide and containing at least an Ru element as a B site element, and a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.

1 . A semiconductor device comprising: 
 a semiconductor substrate;    a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film;    the upper electrode including metal oxide formed of ABO 3  perovskite oxide and containing at least an Ru element as a B site element; and    a metal film containing a Ti element being disposed between the dielectric film and the upper electrode.    
   
   
       2 . A semiconductor device comprising: 
 a semiconductor substrate; and    a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film;    the upper electrode including metal oxide formed of ABO 3  perovskite oxide and containing at least an Ru element and a Ti element as B site elements.    
   
   
       3 . The semiconductor device according to  claim 1 , wherein the dielectric film contains at least Pb.  
   
   
       4 . The semiconductor device according to  claim 2 , wherein the dielectric film contains at least Pb.  
   
   
       5 . The semiconductor device according to  claim 1 , wherein metal oxide is at least one of SrRuO 3  and BaRuO 3 .  
   
   
       6 . The semiconductor device according to  claim 2 , wherein metal oxide is at least one of Sr(Ru, Ti)O 3  and Ba(Ru, Ti)O 3 .  
   
   
       7 . The semiconductor device according to  claim 1 , wherein the capacitor includes a ferroelectric substance and has a nonvolatile memory function.  
   
   
       8 . The semiconductor device according to  claim 2 , wherein the capacitor includes a ferroelectric substance and has a nonvolatile memory function.  
   
   
       9 . A method of manufacturing a semiconductor device, comprising: 
 disposing a lower electrode disposed above a semiconductor substrate;    disposing a dielectric film above the lower electrode;    disposing a metal film containing a Ti element above the dielectric film; and    disposing an upper electrode including metal oxide formed of ABO 3  perovskite oxide and containing at least an Ru element as a B site element above the metal film to form a capacitor.    
   
   
       10 . A method of manufacturing a semiconductor device, comprising: 
 disposing a lower electrode above a semiconductor substrate;    disposing a dielectric film above the lower electrode; and    disposing an upper electrode including metal oxide formed of ABO 3  perovskite oxide and containing at least an Ru element and a Ti element as B site elements above the dielectric film to form a capacitor.    
   
   
       11 . The method according to  claim 9 , wherein the dielectric film contains at least Pb.  
   
   
       12 . The method according to  claim 10 , wherein the dielectric film contains at least Pb.  
   
   
       13 . The method according to  claim 9 , wherein metal oxide is at least one of SrRuO 3  and BaRuO 3 .  
   
   
       14 . The method according to  claim 10 , wherein metal oxide is at least one of Sr(Ru, Ti)O 3  and Ba(Ru, Ti)O 3 .  
   
   
       15 . The method according to  claim 9 , further comprising: forming metal oxide by one of a sputtering process, a CVD process, and a sol-gel process.  
   
   
       16 . The method according to  claim 10 , further comprising: forming metal oxide by one of a sputtering process, a CVD process, and a sol-gel process.