Self-assembled structures

Abstract

A material includes a layer with a plurality of self-assembled structures comprising compositions. The structures are localized in separate islands covering a portion of the layer in an integrated assembly. In some embodiments, the compositions include nanoparticles. In particular, some embodiments pertain to a material with a self-assembled formation of inorganic particles with an average diameter less than about 100 nm. The structures can be used as devices within an integrated article. The method for producing the articles comprises a localization process defining boundaries of the devices and a self-assembly process within the identified boundaries.

1 . A method for generating devices on a layer within specified boundaries, the method comprising: 
 localizing the boundaries of the devices; and    initiating a self-assembly process to deposit a plurality of structures comprising compositions within the boundaries.    
     
     
         2 . The method of  claim 1  wherein the compositions comprise particles having an average primary particle diameter less than about 100 nm.  
     
     
         3 . The method of  claim 1  wherein the localization is performed prior to the self-assembly process.  
     
     
         4 . The method of  claim 1  wherein the self-assembly process is performed prior to the localization process.  
     
     
         5 . The method of  claim 1  wherein the localization is performed using a mask.  
     
     
         6 . The method of  claim 1  wherein the localization is performed using a focused beam.  
     
     
         7 . The method of  claim 1  wherein the localization is performed by activating the surface within the boundaries such that the self-assembly process is effective within the boundaries.  
     
     
         8 . The method of  claim 7  wherein the activation comprises the deposition of an appropriate substrate for the self-assembly process.  
     
     
         9 . The method of  claim 7  wherein the activation comprises the removal of inhibitory material from within the boundaries.  
     
     
         10 . The method of  claim 1  wherein the localization is performed by deactivating the surface outside of the boundaries.  
     
     
         11 . The method of  claim 10  wherein the deactivation is performed by the removal of material that directs the self-assembly process.  
     
     
         12 . The method of  claim 10  wherein the deactivation is performed by the deposition of a material that inhibits the self-assembly process.  
     
     
         13 . The method of  claim 1  further comprising integrating the plurality of devices.  
     
     
         14 . An article comprising a plurality of integrated devices wherein at least one device comprises a self-assembled array of compositions.  
     
     
         15 . The article of  claim 14  wherein the device is a field emission device, a field effect transistor.  
     
     
         16 . The article of  claim 14  wherein the device is a battery.  
     
     
         17 . The article of  claim 14  wherein the device is an optical interconnect.  
     
     
         18 . The article of  claim 14  wherein the device comprises inorganic particles having an average diameter from about 2 nm to about 100 nm.  
     
     
         19 . The article of  claim 18  wherein the particles include effectively no particles with a diameter greater than about a factor of four times the average particle size.  
     
     
         20 . The article of  claim 18  wherein the particles comprise a metal oxide.  
     
     
         21 . The article of  claim 18  wherein the particles comprise a metal.  
     
     
         22 . The article of  claim 14  wherein the integrated devices are located in a plurality of interconnected layers.  
     
     
         23 . The article of  claim 14  wherein the device has a minimum diameter less than about 1 micron.  
     
     
         24 . The article of  claim 14  wherein the device has a minimum diameter less than about 0.13 microns.