Wet cleaning apparatus and methods

Abstract

Apparatus for wet cleaning is disclosed. In one example, such an apparatus includes first and second Sulfuric Acid Peroxide Mixture (SPM) baths for removing photoresist on semiconductor wafers that are sequentially provided; a Hot Quick Dump Rinse (HQDR) bath for cleaning the wafers conveyed from the first and second baths; first and second Ammonium Peroxide Replacement (APR) baths for cleaning particles and organic residues remaining on the wafers conveyed from the HQDR bath; and a drier for drying the wafers conveyed from the first and second APR bath.

1 . An apparatus for performing removal of photoresist and SH cleaning, comprising: 
 first and second Sulfuric Acid Peroxide Mixture (SPM) baths to remove photoresist on semiconductor wafers that are sequentially provided;    a Hot Quick Dump Rinse (HQDR) bath to clean the wafers conveyed from the first and second SPM baths;    first and second Ammonium Peroxide Replacement (APR) baths to clean particles and organic residues remaining on the wafers conveyed from the HQDR bath; and    a drier to dry the wafers conveyed from the first and second APR baths.    
   
   
       2 . An apparatus as defined by  claim 1 , further including a tank that heats a mixed solution of alkali chemicals, H 2 O 2  and deionized water to a processing temperature and provides the heated mixed solution to the first and second APR baths.  
   
   
       3 . A method for wet cleaning by using first and second SPM baths and a HQDR bath, wherein first plurality of wafers in a first wafer cassette are cleaned by passing through the first SPM bath, the HQDR bath and the first APR bath, while second plurality of wafers in a second wafer cassette are cleaned by passing through the second SPM bath, the HQDR bath and the second APR bath.