Manufacturing process for ultra slim electrooptic display device unit

Abstract

To obtain a high intensity, high definition and sophisticated electrooptic display device unit such as LCD or EL, which has high electron and positive hole mobility and low leak electric current qualities. A porous semiconductor layer, a monocrystalline Si layer, and a SiO 2 layer are formed on a monocrystalline Si substrate. The SiO 2 layer of the peripheral circuit area is removed, leaving the SiO 2 layer in the display area. A poly Si layer is formed in the display area by epitaxial growth, and a monocrystalline Si layer is formed in the peripheral circuit area. Then, the display element section is formed in the display area and the peripheral circuitry section is formed in the peripheral circuit area. The assembly is then divided and packaged into ultra slim electrooptic display device units.

1 - 5 . (canceled)  
   
   
       6 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming a porous semiconductor layer on a support substrate made of a mono crystalline semiconductor,    a process of forming a mono crystalline semiconductor layer via said porous semiconductor layer on said support substrate,    a process of forming an insulating layer on a surface of said mono crystalline semiconductor layer, and further forming an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer,    a process of removing at least the amorphous semiconductor layer, the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in the peripheral circuit region while leaving the insulating layer and the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in the display region,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region, respectively,    a process of separating said support substrate from said porous semiconductor layer,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       7 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming a porous semiconductor layer on a seed substrate and support substrate, each made of a mono crystalline semiconductor,    a process of forming a mono crystalline semiconductor layer on said seed substrate and support substrate via said porous semiconductor layer,    a process of forming an insulating layer via said mono crystalline semiconductor layer on at least one of said seed substrate or support substrate,    a process of bonding said seed substrate and support substrate at the surface forming said insulating layer,    a process of separating said seed substrate from the porous semiconductor layer of the same seed substrate,    a process of flattening the surface of said mono crystalline semiconductor layer which has been exposed by separating said seed substrate, by etching at least using a hydrogen annealing treatment,    a process of forming an insulating layer on a surface of said mono crystalline semiconductor layer, and further forming an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer,    a process of removing at least the amorphous semiconductor layer, the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in the peripheral circuit region while leaving the insulating layer and the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in the display region,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region,    a process of separating said support substrate from said porous semiconductor layer on the same support substrate,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       8 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming an insulating layer on a surface of a support substrate made of a mono crystalline semiconductor, and further forming an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer,    a process of removing at least the amorphous semiconductor layer, the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in the peripheral circuit region while leaving the insulating layer and the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in the display region,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region,    a process of forming an ion injection layer at a specified depth in said support substrate,    a process of performing a separation type annealing treatment,    a process of separating said support substrate from the strained section of said ion injection layer,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       9 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming an ion injection layer on a seed substrate made of a mono crystalline semiconductor,    a process of forming an insulating layer on a support substrate made of a mono crystalline semiconductor,    a process of forming a mono crystalline semiconductor layer by bonding an ion injection layer of said seed substrate on the insulating layer of said support substrate, and subsequently by forming a covalent bonding between said ion injection layer and the insulating layer with a heat treatment,    a process of separating said seed substrate from the strained section of the ion injection layer of the same seed substrate by performing a separation type annealing treatment,    a process of flattening by etching the surface of said mono crystalline semiconductor layer at least with a hydrogen annealing treatment,    a process of forming an insulating layer on a surface of said mono crystalline semiconductor layer, and further forming an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer,    a process of removing at least the amorphous semiconductor layer, the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in the peripheral circuit region while leaving the insulating layer and the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in the display region,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region,    a process of forming an ion injection layer at a specified depth in said support substrate,    a process of performing a separation type annealing treatment,    a process of separating said support substrate from the strained section of said ion injection layer,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       10 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming an ion injection layer on a seed substrate made of a mono crystalline semiconductor,    a process of forming a porous semiconductor layer on a support substrate made of a mono crystalline semiconductor,    a process of forming a mono crystalline semiconductor layer via said porous semiconductor layer on said support substrate,    a process of forming an insulating layer on said mono crystalline semiconductor layer,    a process of forming a mono crystalline semiconductor layer by bonding the ion injection layer of said seed substrate with the insulating layer of said support substrate, and subsequently by forming a covalent bonding between said ion injection layer and the insulating layer using a heat treatment,    a process of separating said seed substrate at the strained section of the ion injection layer of the same seed substrate by performing a separation type annealing treatment,    a process of flattening by etching the surface of said mono crystalline semiconductor layer at least using a hydrogen annealing treatment,    a process of forming an insulating layer on a surface of said mono crystalline semiconductor layer, and further forming an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer,    a process of removing at least the amorphous semiconductor layer, the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in the peripheral circuit region while leaving the insulating layer and the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in the display region,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer, or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region,    a process of separating said support substrate from said porous semiconductor layer,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       11 - 13 . (canceled)  
   
   
       14 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming a porous semiconductor layer both on a seed substrate and support substrate, each made of a mono crystalline semiconductor,    a process of forming a mono crystalline semiconductor layer both on said seed substrate and support substrate, respectively via said porous semiconductor layer,    a process of forming an insulating layer via said mono crystalline semiconductor layer on at least one of said seed substrate or support substrate,    a process of bonding said seed substrate and support substrate at the surface forming said insulating layer,    a process of separating said seed substrate from the porous semiconductor layer of the same seed substrate,    a process of flattening the surface of said mono crystalline semiconductor layer which has been exposed by separating said seed substrate, by etching at least with a hydrogen annealing treatment,    a process of exposing the insulating layer by etching the display region of said mono crystalline semiconductor layer,    a process of forming an insulating layer and an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer on the entire surface,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region, wherein at least the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer have been etched,    a process of separating said support substrate from said porous semiconductor layer on the same support substrate,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       15 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming an ion injection layer on a seed substrate made of a mono crystalline semiconductor,    a process of forming an insulating layer on a support substrate made of a mono crystalline semiconductor,    a process of forming a mono crystalline semiconductor layer by bonding an ion injection layer of said seed substrate on the insulating layer of said support substrate, and subsequently by forming a covalent bonding between said ion injection layer and the insulating layer with a heat treatment,    a process of separating said seed substrate from the strained section of the ion injection layer of the same seed substrate by performing a separation type annealing treatment,    a process of flattening by etching the surface of said mono crystalline semiconductor layer at least with a hydrogen annealing treatment,    a process of exposing the insulating layer by etching the display region of said mono crystalline semiconductor layer,    a process of forming an insulating layer and an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer on the entire surface,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region, wherein at least the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer have been etched,    a process of forming an ion injection layer at a specified depth in said support substrate,    a process of performing a separation type annealing treatment,    a process of separating said support substrate from the strained section of said ion injection layer,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       16 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming an ion injection layer on a seed substrate made of a mono crystalline semiconductor,    a process of forming a porous semiconductor layer on a support substrate made of a mono crystalline semiconductor,    a process of forming a mono crystalline semiconductor layer via said porous semiconductor layer on said support substrate,    a process of forming an insulating layer on said mono crystalline semiconductor layer,    a process of forming a mono crystalline semiconductor layer by bonding the ion injection layer of said seed substrate with the insulating layer of said support substrate, and subsequently by forming a covalent bonding between said ion injection layer and the insulating layer using a heat treatment,    a process of separating said seed substrate at the strained section of the ion injection layer of the same seed substrate by performing a separation type annealing treatment,    a process of flattening by etching the surface of said mono crystalline semiconductor layer at least using a hydrogen annealing treatment,    a process of exposing the insulating layer by etching the display region of said mono crystalline semiconductor layer,    a process of forming an insulating layer and an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer on the entire surface,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region, wherein at least the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer have been etched,    a process of separating said support substrate from said porous semiconductor layer on the same support substrate,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       17 - 19 . (canceled)  
   
   
       20 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming a porous semiconductor layer both on a seed substrate and support substrate, each made of a mono crystalline semiconductor,    a process of forming a mono crystalline semiconductor layer both on said seed substrate and support substrate, respectively via said porous semiconductor layer,    a process of forming an insulating layer via said mono crystalline semiconductor layer on at least one of said seed substrate or support substrate,    a process of bonding said seed substrate and support substrate at the surface forming said insulating layer,    a process of separating said seed substrate from the porous semiconductor layer of the same seed substrate,    a process of flattening the surface of said mono crystalline semiconductor layer which has been exposed by separating said seed substrate, by etching at least with a hydrogen annealing treatment,    a process of exposing the insulating layer by etching the display region of said mono crystalline semiconductor layer,    a process of forming a light-shielding metallic layer in the amorphous semiconductor layer or amorphous and polycrystalline mixed semiconductor layer or polycrystalline semiconductor display device forming region of the display region,    a process of forming an insulating layer and an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer on the entire surface,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region, wherein at least the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer have been etched,    a process of separating said support substrate from said porous semiconductor layer on the same support substrate,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       21 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming an ion injection layer on a seed substrate made of a mono crystalline semiconductor,    a process of forming an insulating layer on a support substrate made of a mono crystalline semiconductor,    a process of forming a mono crystalline semiconductor layer by bonding an ion injection layer of said seed substrate on the insulating layer of said support substrate, and subsequently by forming a covalent bonding between said ion injection layer and the insulating layer with a heat treatment,    a process of separating said seed substrate from the strained section of the ion injection layer of the same seed substrate by performing a separation type annealing treatment,    a process of flattening by etching the surface of said mono crystalline semiconductor layer at least with a hydrogen annealing treatment,    a process of exposing the insulating layer by etching the display region of said mono crystalline semiconductor layer,    a process of forming a light-shielding metallic layer in the amorphous semiconductor layer or amorphous and polycrystalline mixed semiconductor layer or polycrystalline semiconductor display device forming region of the display region,    a process of forming an insulating layer and an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer on the entire surface,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region, wherein at least the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer have been etched,    a process of forming an ion injection layer at a specified depth in said support substrate,    a process of performing a separation type annealing treatment,    a process of separating said support substrate from the strained section of said ion injection layer,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       22 . A method of manufacturing an ultra-slim electrooptic display comprising: 
 a process of forming an ion injection layer on a seed substrate made of a mono crystalline semiconductor,    a process of forming a porous semiconductor layer on a support substrate made of a mono crystalline semiconductor,    a process of forming a mono crystalline semiconductor layer via said porous semiconductor layer on said support substrate,    a process of forming an insulating layer on said mono crystalline semiconductor layer,    a process of forming a mono crystalline semiconductor layer by bonding the ion injection layer of said seed substrate with the insulating layer of said support substrate, and subsequently by forming a covalent bonding between said ion injection layer and the insulating layer using a heat treatment,    a process of separating said seed substrate at the strained section of the ion injection layer of the same seed substrate by performing a separation type annealing treatment,    a process of flattening by etching the surface of said mono crystalline semiconductor layer at least using a hydrogen annealing treatment,    a process of exposing the insulating layer by etching the display region of said mono crystalline semiconductor layer,    a process of forming a light-shielding metallic layer in the amorphous semiconductor layer or amorphous and polycrystalline mixed semiconductor layer or polycrystalline semiconductor display device forming region of the display region,    a process of forming an insulating layer and an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer, or a polycrystalline semiconductor layer on the entire surface,    a process of forming a display device unit in the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer in said display region, and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region, wherein at least the amorphous semiconductor layer or the amorphous and polycrystalline mixed semiconductor layer or the polycrystalline semiconductor layer have been etched,    a process of separating said support substrate from said porous semiconductor layer,    a process of bonding a support on the ultra-slim electrooptic display device substrate after said separation, and    a process of being divided into various ultra-slim electrooptic displays after bonding said support.    
   
   
       23 . (canceled)  
   
   
       24 . The method of manufacturing an ultra-slim electrooptic display as claimed in  claim 6 , including 
 a process of forming a polycrystalline semiconductor layer with controlled crystal grain size by solid phase crystallization after selective ion injection or ion doping using at least one kind of Group IV elements for an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer or a polycrystalline semiconductor layer in said display region, and    a process of forming a display device unit in the polycrystalline semiconductor layer having the controlled crystal grain size in said display region and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region.    
   
   
       25 . (canceled)  
   
   
       26 . The method of manufacturing an ultra-slim electrooptic display as claimed in  claim 6 , including 
 a process of forming a polycrystalline semiconductor layer with controlled crystal grain size after recrystallization of an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer or a polycrystalline semiconductor layer in said display region, and    a process of forming a display device unit in the polycrystalline semiconductor layer having the controlled crystal grain size in said display region and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region.    
   
   
       27 . (canceled)  
   
   
       28 . The method of manufacturing an ultra-slim electrooptic display as claimed in  claim 6 , including 
 a process of forming a polycrystalline semiconductor layer with controlled crystal grain size by recrystallization after selective ion injection or ion doping using at least one kind of Group IV elements for an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer or a polycrystalline semiconductor layer in said display region, and    a process of forming a display device unit in the polycrystalline semiconductor layer having the controlled crystal grain size in said display region and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region.    
   
   
       29 - 30 . (canceled)  
   
   
       31 . The method of manufacturing an ultra-slim electrooptic display as claimed in  claim 6 , including 
 a process of forming for an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer or a polycrystalline semiconductor layer containing at least one kind of Group IV elements in said display region and a mono crystalline semiconductor layer in said peripheral circuit region,    a process of forming a polycrystalline semiconductor layer with controlled crystal grain size by solid phase crystallization selectively for an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer or a polycrystalline semiconductor layer in said display region, and    a process of forming a display device unit in the polycrystalline semiconductor layer having the controlled crystal grain size in said display region and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region.    
   
   
       32 . The method of manufacturing an ultra-slim electrooptic display as claimed in  claim 6 , including 
 a process of forming for an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer or a polycrystalline semiconductor layer containing at least one kind of Group IV elements in said display region and a mono crystalline semiconductor layer in said peripheral circuit region,    a process of forming a polycrystalline semiconductor layer with controlled crystal grain size by recrystallization for an amorphous semiconductor layer or an amorphous and polycrystalline mixed semiconductor layer or a polycrystalline semiconductor layer in said display region, and    a process of forming a display device unit in the polycrystalline semiconductor layer having the controlled crystal grain size in said display region and a peripheral circuit unit in the mono crystalline semiconductor layer of said peripheral circuit region.    
   
   
       33 - 37 . (canceled)