US2005266261A1PendingUtilityA1

Method for improving electrical conductivity of metals, metal alloys and metal oxides

Assignee: MUFFOLETTO BARRYPriority: Oct 16, 1998Filed: Jul 11, 2005Published: Dec 1, 2005
Est. expiryOct 16, 2018(expired)· nominal 20-yr term from priority
B32B 15/01C23C 14/022C23C 14/14C23C 14/16C23C 14/325Y10T428/12507Y10T428/12493Y10T428/12722
57
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Claims

Abstract

A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu. The native oxide layer of the substrate is changed from electrically insulating to electrically conductive. The step of depositing is carried out by a low temperature arc vapor deposition process. The deposition may be performed on either treated or untreated substrate. The substrate with native oxide layer made electrically conductive is useable in the manufacture of electrodes for devices such as capacitors and batteries.

Claims

exact text as granted — not AI-modified
1 . A substrate of improved electrical conductivity, wherein said substrate is selected from the group consisting of Group IVA, Group VA and Group VIA metals, aluminum, manganese, nickel, cooper and stainless steel and said substrate having a native oxide layer on a surface thereof, and wherein said substrate surface has been subjected to an arc vapor deposition process that removes the native oxide layer and then deposits onto the thusly treated substrate a first metal selected from the group consisting of Group IA and Group VIIIA metals for increasing the electrical conductivity of said substrate surface.  
   
   
       2 . The substrate of  claim 1  further including a coating of a second material on the first metal deposited on the substrate, thereby rendering said substrate useable as an electrode in a capacitor.  
   
   
       3 . The substrate of  claim 2  wherein the second material comprised ruthenium.  
   
   
       4 . The substrate of  claim 1  wherein the native oxide layer is removed from the substrate under vacuum followed by deposition of the first metal.  
   
   
       5 . The substrate of  claim 4  wherein the vacuum is not broken between the time that the native oxide layer is removed and deposition of the first metal.  
   
   
       6 . The substrate of  claim 1  wherein the first metal is palladium deposited to a thickness of about 0.1 microns.  
   
   
       7 . A method for improving the electrical conductivity of a substrate selected from the group consisting of Group IVA, Group VA and Group VIA metals, aluminum, manganese, nickel, cooper and stainless steel, wherein the substrate has a native oxide layer on a surface thereof, comprising the steps of; 
 a) subjecting the substrate surface to an arc vapor deposition process thereby removing the native oxide layer; and    b) then, depositing onto the thusly treated substrate a first metal selected from the group consisting of Group IA and Group VIIIA metals for increasing the electrical conductivity of the substrate.    
   
   
       8 . The method of  claim 7  further including coating a second material on the first metal deposited on the substrate, thereby rendering the substrate useable as an electrode in a capacitor.  
   
   
       9 . The method of  claim 8  including providing ruthenium as the second material.  
   
   
       10 . The method of  claim 7  including removing the native oxide layer from the substrate under vacuum followed by depositing of the first metal.  
   
   
       11 . The method of  claim 10  including maintaining the vacuum between the time that the native oxide layer is removed and deposition of the first metal.  
   
   
       12 . The method of  claim 7  including providing palladium as the first metal deposited to a thickness of about 0.1 microns.

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