Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device

Abstract

A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent.

1 - 37 . (canceled)  
   
   
       38 . A material for forming a low dielectric constant film comprising, 
 a solution including a resin, a solvent, and a fine particle principally composed of a silicon atom and an oxygen atom, and    wherein the fine particle includes a pore, and    the fine particle has a size equal to or more than 1 nm and equal to or less than 30 nm.    
   
   
       39 . The material for forming a low dielectric constant film of  claim 38 , 
 wherein the pore in the fine particle has a size equal to or more than 0.5 nm and equal to or less than 3 nm, and    wherein the size of the fine particle is bigger than the size of the pore.    
   
   
       40 . The material for forming a low dielectric constant film of  claim 38 , 
 wherein a plurality of pores in the fine particle are partially confined.    
   
   
       41 . The material for forming a low dielectric constant film of  claim 38 , 
 wherein a plurality of pores in the fine particle are isolated.    
   
   
       42 . The material for forming a low dielectric constant film of  claim 38 , 
 wherein the resin including a silicon is an organic silicon.    
   
   
       43 . The material for forming a low dielectric constant film of  claim 38 , 
 wherein the resin including a silicon is the organic silicon having a bond between a silicon atom and a methyl group, or the organic polymer includes an aryl-ether bond or an aryl-aryl bond.    
   
   
       44 . The material for forming a low dielectric constant film of  claim 38 , 
 wherein the solution further includes a compound for reinforcing a bond between the resin and the fine particle.    
   
   
       45 . The material for forming a low dielectric constant film of  claim 38 , 
 wherein the fine particle has a crystal structure, or principally composed of a meso-porous silica or a zeolite crystal.    
   
   
       46 . The material for forming a low dielectric constant film of  claim 38 , wherein a rate of the fine particle in a solute is higher than 30 wt %.  
   
   
       47 . A material for forming a low dielectric constant film comprising, 
 a solution including a resin, a solvent, and a fine particle principally composed of a silicon atom and an oxygen atom,    wherein the fine particle includes a pore having a size equal to or more than 0.5 nm and equal to or less than 3 nm.    
   
   
       48 . The material for forming a low dielectric constant film of  claim 47 , 
 wherein a plurality of pores in the fine particle an partially confined.    
   
   
       49 . The material for forming a low dielectric constant film of  claim 47 , 
 wherein a plurality of pores in the fine particle are isolated.    
   
   
       50 . The material for forming a low dielectric constant film of  claim 47 , 
 wherein the resin includes a silicon or organic polymer.    
   
   
       51 . The material for forming a low dielectric constant film of  claim 47 , 
 wherein the resin including a silicon is an organic silicon.    
   
   
       52 . The material for forming a low dielectric constant film of  claim 51 , 
 wherein the organic silicon includes a bond between a silicon atom and a methyl group, or the organic polymer includes an aryl-ether bond or an aryl-aryl bond.    
   
   
       53 . The material for forming a low dielectric constant film of  claim 47 , 
 wherein the solution further includes a compound for reinforcing a bond between the resin and the fine particle.    
   
   
       54 . The material for fanning a low dielectric constant film of  claim 47 , wherein the fine particle has a crystal structure, or principally composed of a meso-porous silica or a zeolite crystal.  
   
   
       55 . The material for forming a low dielectric constant film of  claim 47 , wherein a rate of the fine particle in a solute is higher than 30 wt %.  
   
   
       56 . A material for forming a low dielectric constant film comprising, 
 a fine particle principally composed of a silicon atom and an oxygen atom, and    wherein the fine particle has a crystal structure or porous structure including a pore, and    wherein the pore has a size equal to or more than 0.5 nm and equal to or less than 3 nm.    
   
   
       57 . The material for fanning a low dielectric constant film of  claim 56 , wherein the fine particle has a size equal to or more than 1 nm and equal to or less than 30 nm, and 
 wherein the size of the fine particle is bigger than the size of the pore.