Semiconductor device and method of fabricating the same

Abstract

A semiconductor device includes a silicon substrate, a first silicon oxide film deposited on the silicon substrate, a silicon-rich film deposited on the first silicon oxide film, and a second silicon film deposited on the silicon-rich film and formed by heat-treating a fluid applied for forming a silica coat.

1 . A semiconductor device comprising: 
 a silicon substrate;    a first silicon oxide film deposited on the silicon substrate;    a silicon-rich film deposited on the first silicon oxide film; and    a second silicon film deposited on the silicon-rich film and formed by heat-treating a fluid applied for forming a silica coat.    
   
   
       2 . A semiconductor device comprising: 
 a silicon substrate;    an element isolation trench formed on the substrate, the trench having an inner wall;    a first silicon oxide film deposited on the inner wall of the trench;    a silicon-rich film deposited on the first silicon oxide film; and    a second silicon film deposited on the silicon-rich film so as to bury the trench and formed by heat-treating a polysilazane film.    
   
   
       3 . The semiconductor device according to  claim 2 , wherein the silicon-rich film comprises a silicon film.  
   
   
       4 . The semiconductor device according to  claim 2 , wherein the silicon-rich film comprises a silicon-rich insulating film.  
   
   
       5 . The semiconductor device according to  claim 4 , wherein the silicon-rich insulating film comprises a silicon oxide film.  
   
   
       6 . The semiconductor device according to  claim 5 , wherein the silicon-rich insulating film has a refractive index ranging from 1.45 to 1.72.  
   
   
       7 . The semiconductor device according to  claim 2 , wherein the silicon-rich film has a film thickness ranging from 10 nm to 500 nm.  
   
   
       8 . The semiconductor device according to  claim 2 , further comprising an insulating film deposited under the silicon-rich film.  
   
   
       9 . A method of fabricating a semiconductor device, comprising: 
 depositing a first silicon oxide film on a silicon substrate;    depositing a silicon-containing film on the first silicon oxide film;    applying a coating solution for silica film formation over the silicon-containing film; and    heat-treating the coating solution, thereby forming a second silicon oxide film.    
   
   
       10 . The method according to  claim 9 , wherein the second silicon oxide film depositing step includes forming an element isolation groove having an inner wall and depositing the first silicon oxide film on the inner wall of the element isolation groove, and the coating solution comprises a polysilazane solution.  
   
   
       11 . The method according to  claim 10 , wherein the silicon-containing film comprises a silicon film.  
   
   
       12 . The method according to  claim 10 , wherein the silicon-containing film comprises a stoichiometrically silicon-rich film.  
   
   
       13 . The method according to  claim 12 , wherein the stoichiometrically silicon-rich film comprises a silicon-rich insulating film.  
   
   
       14 . The method according to  claim 12 , wherein the silicon-rich film comprises a silicon oxide film.  
   
   
       15 . The method according to  claim 13 , wherein the silicon-rich insulating film has a refractive index ranging from 1.45 to 1.72.  
   
   
       16 . The method according to  claim 10 , wherein the silicon-containing film has a film thickness ranging from 10 nm to 500 nm.  
   
   
       17 . The method according to  claim 10 , wherein an insulating film is deposited under the silicon-rich film.