Method of measuring contact resistance of probe and method of testing semiconductor device

Abstract

A measuring method of the contact resistance of a probe includes bringing a plurality of probes including a first and second probes into contact with a plurality of electrode pads that is disposed on a semiconductor device to be electrically tested and connected each other with a conductive wiring; connecting a power supply to at least one predetermined first probe of the plurality of probes and supplying a current or a voltage from the first probe through the electrode pad and the wiring to the second probe to the semiconductor device; measuring the contact resistance between the electrode pad and the probe based on the current or the voltage supplied to the semiconductor device; judging whether the measured contact resistance is equal to or more than a predetermined value or not; and when the contact resistance is equal to or more than the predetermined value, the probes are cleansed.

1 . A method of measuring a contact resistance of a probe, including: 
 bringing a plurality of probes including a first probe and a second probe into contact with a plurality of electrode pads that are disposed on a semiconductor device to be electrically tested and connected each other with a conductive wiring;    connecting a power supply to the first probe and supplying a current or a voltage from the first probe through the electrode pads and the wiring to the second probe;    measuring contact resistance between the electrode pads and the probes based on the current or the voltage supplied to the semiconductor device;    judging whether the measured contact resistance is equal to or more than a predetermined value or not; and    when the contact resistance is less than the predetermined value, cleansing the plurality of probes.    
   
   
       2 . A method of measuring contact resistance of a probe as set forth in  claim 1 , further including: 
 prior to the measuring the contact resistance, setting the predetermined value in accordance with an operating voltage of the semiconductor device.    
   
   
       3 . A method of measuring contact resistance of a probe as set forth in  claim 1 , further including: 
 prior to the measuring the contact resistance, setting the current or the voltage supplied from the power supply to the first probe in accordance with an operating voltage of the semiconductor device.    
   
   
       4 . A method of measuring contact resistance of a probe as set forth in  claim 1 , further including: 
 disposing the semiconductor device, prior to the measuring the contact resistance, on a supporting area in a prober that has the supporting area that supports the semiconductor device and a cleaning area that cleanses the probe;    wherein the cleaning is performed in the cleaning area of the prober.    
   
   
       5 - 13 . (canceled)  
   
   
       14 . A method of measuring a contact resistance of a probe, comprising: 
 providing a semiconductor device having a plurality of power supply pads electrically connected to each other, and a probe device having a plurality of probes;    contacting the power supply pads with the probes so as to be electrically connected therebetween;    connecting one of the probes with a current source and another one of the probes with a ground;    measuring a contact resistance based on a voltage of the one of the probes connected to the voltage source; and    cleaning the probes when the measured contact resistance is equal to or more than a predetermined value.    
   
   
       15 . A method of measuring a contact resistance of a probe according to  claim 14 , wherein the probes are connected to a voltage source during the measure of the contact resistance.  
   
   
       16 . A method of measuring a contact resistance of a probe according to  claim 15 , wherein the voltage source supplies a power supply voltage.  
   
   
       17 . A method of measuring a contact resistance of a probe according to  claim 15 , wherein the voltage source supplies a ground voltage.  
   
   
       18 . A method of measuring a contact resistance of a probe according to  claim 14 , further comprising conducting a test of the semiconductor device after the cleaning of the probes.  
   
   
       19 . A method of measuring a contact resistance of a probe comprising: 
 providing a semiconductor device having a plurality of power supply pads electrically connected to each other, and a probe device having a plurality of probes;    contacting the power supply pads with the probes so as to be electrically connected therebetween;    connecting one of the power supply pads with a voltage source and another one of the probes with a ground;    measuring a contact resistance based on a voltage of the one of the probes connected to the voltage source; and    cleaning the probes when the measured contact resistance is equal to or more than a predetermined value.    
   
   
       20 . A method of measuring a contact resistance of a probe according to  claim 19 , wherein the probes are connected to a voltage source during the measure of the contact resistance.  
   
   
       21 . A method of measuring a contact resistance of a probe according to  claim 20 , wherein the voltage source supplies a power supply voltage.  
   
   
       22 . A method of measuring a contact resistance of a probe according to  claim 20 , wherein the voltage source supplies a ground voltage.  
   
   
       23 . A method of measuring a contact resistance of a probe according to  claim 19 , further comprising conducting a test of the semiconductor device after the cleaning of the probes.