US2005257741A1PendingUtilityA1
Film forming apparatus and method of manufacturing light emitting device
Est. expiryJul 10, 2020(expired)· nominal 20-yr term from priority
Inventors:Shunpei Yamazaki
H10K 71/421H10K 59/871H10D 86/60H10D 86/40H10D 86/021H10F 55/00H10K 71/13H10K 59/00H10K 71/00H10K 71/18H10K 59/1201
53
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Claims
Abstract
The problem regarding volatileness of a solvent in an EL forming material, which occurs in adopting printing, are solved. An EL layer is formed in a pixel portion of a light emitting device by printing. Upon formation of the EL layer, a printing chamber is pressurized to reach a pressure equal to or higher than the atmospheric pressure, and the printing chamber is filled with inert gas or set to a solvent atmosphere. Thus the difficulty in forming an EL layer by printing is eliminated.
Claims
exact text as granted — not AI-modified1 . A film forming apparatus comprising a processing chamber for forming an electro luminescence layer,
wherein the processing chamber is connected to a pressure adjusting mechanism, and wherein the processing chamber is pressurized by the pressure adjusting mechanism to reach a pressure equal to or higher than the atmospheric pressure.
2 . A film forming apparatus comprising a processing chamber for forming an electro luminescence layer,
wherein the processing chamber is connected to a compressor, and wherein the processing chamber is pressurized by introducing gas from the compressor to reach a pressure equal to or higher than the atmospheric pressure.
3 . A film forming apparatus comprising a processing chamber for forming an electro luminescence layer,
wherein the processing chamber is connected to a compressor; wherein the processing chamber is pressurized by introducing gas from the compressor to reach a pressure equal to or higher than the atmospheric pressure; and wherein the processing chamber has a solvent atmosphere.
4 . A film forming apparatus comprising a processing chamber for forming an electro luminescence layer,
wherein the processing chamber is provided with a compressor, a sensor, and an exhaustion valve; wherein the compressor introduces gas into the processing chamber; and wherein the sensor measures the pressure in the processing chamber and inputs a signal for controlling opening and closing of the exhaustion valve.
5 . A film forming apparatus according to claim 2 , wherein the gas is inert gas with a dew point of −20° C. or lower.
6 . A film forming apparatus according to claim 5 , wherein the inert gas comprises nitrogen, argon, or helium.
7 . A film forming apparatus according to claim 3 , wherein the gas is inert gas with a dew point of −20° C. or lower.
8 . A film forming apparatus according to claim 7 , wherein the inert gas comprises nitrogen, argon, or helium.
9 . A film forming apparatus according to claim 4 , wherein the gas is inert gas with a dew point of −20° C. or lower.
10 . A film forming apparatus according to claim 9 , wherein the inert gas comprises nitrogen, argon, or helium.
11 . A film forming apparatus according to claim 1 , wherein two or more of processing chambers are provided in the film forming apparatus.
12 . A film forming apparatus according to claim 2 , wherein two or more of processing chambers are provided in the film forming apparatus.
13 . A film forming apparatus according to claim 3 , wherein two or more of processing chambers are provided in the film forming apparatus.
14 . A film forming apparatus according to claim 4 , wherein two or more of processing chambers are provided in the film forming apparatus.
15 . A film forming apparatus according to claim 1 , wherein the pressure in the processing chamber is 1.1 to 1.5 atm.
16 . A film forming apparatus according to claim 2 , wherein the pressure in the processing chamber is 1.1 to 1.5 atm.
17 . A film forming apparatus according to claim 3 , wherein the pressure in the processing chamber is 1.1 to 1.5 atm.
18 . A film forming apparatus according to claim 4 , wherein the pressure in the processing chamber is 1.1 to 1.5 atm.
19 . A film forming apparatus for forming an electro luminescence layer and a second electrode on a first electrode that is formed on an insulating surface, the apparatus comprising:
a first processing chamber for forming the electro luminescence layer; a second processing chamber for drying the electro luminescence layer; and a third processing chamber for forming the second electrode, wherein the first processing chamber is connected to a compressor, and wherein the first processing chamber is pressurized by introducing gas from the compressor to reach a pressure equal to or higher than the atmospheric pressure.
20 . A film forming apparatus for forming an electro luminescence layer and a second electrode on a first electrode that is formed on an insulating surface, the apparatus comprising:
a first processing chamber for forming the electro luminescence layer; a second processing chamber for drying the electro luminescence layer; and a third processing chamber for forming the second electrode, wherein the first processing chamber is connected to a compressor; wherein the first processing chamber is pressurized by introducing gas from the compressor to reach a pressure equal to or higher than the atmospheric pressure; and wherein the first processing chamber has a solvent atmosphere.
21 . A film forming apparatus for forming an electro luminescence layer and a second electrode on a first electrode that is formed on an insulating surface, the apparatus comprising:
a first processing chamber for forming the electro luminescence layer; a second processing chamber for drying the electro luminescence layer; and a third processing chamber for forming the second electrode, wherein the processing chamber is provided with a compressor, a sensor, and an exhaustion valve; wherein the compressor introduces gas into the processing chamber; and wherein the sensor measures the pressure in the processing chamber and inputs a signal for controlling opening and closing of the exhaustion valve.
22 . A film forming apparatus according to claim 19 , wherein the gas is inert gas with a dew point of −20° C. or lower.
23 . A film forming apparatus according to claim 22 , wherein the inert gas comprises nitrogen, argon, or helium.
24 . A film forming apparatus according to claim 20 , wherein the gas is inert gas with a dew point of −20° C. or lower.
25 . A film forming apparatus according to claim 24 , wherein the inert gas comprises nitrogen, argon, or helium.
26 . A film forming apparatus according to claim 21 , wherein the gas is inert gas with a dew point of −20° C. or lower.
27 . A film forming apparatus according to claim 26 , wherein the inert gas comprises nitrogen, argon, or helium.
28 . A film forming apparatus according to claim 19 , wherein two or more of first processing chambers are provided in the film forming apparatus.
29 . A film forming apparatus according to claim 20 , wherein two or more of first processing chambers are provided in the film forming apparatus.
30 . A film forming apparatus according to claim 21 , wherein more of first processing chambers are provided in the film forming apparatus.
31 . A film forming apparatus according to claim 19 , wherein the pressure in the first processing chamber is 1.1 to 1.5 atm.
32 . A film forming apparatus according to claim 20 , wherein the pressure in the first processing chamber is 1.1 to 1.5 atm.
33 . A film forming apparatus according to claim 21 , wherein the pressure in the first processing chamber is 1.1 to 1.5 atm. 1.
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