US2005257741A1PendingUtilityA1

Film forming apparatus and method of manufacturing light emitting device

Assignee: SEMICONDUCTOR ENERGY LABPriority: Jul 10, 2000Filed: Jul 28, 2005Published: Nov 24, 2005
Est. expiryJul 10, 2020(expired)· nominal 20-yr term from priority
H10K 71/421H10K 59/871H10D 86/60H10D 86/40H10D 86/021H10F 55/00H10K 71/13H10K 59/00H10K 71/00H10K 71/18H10K 59/1201
53
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Claims

Abstract

The problem regarding volatileness of a solvent in an EL forming material, which occurs in adopting printing, are solved. An EL layer is formed in a pixel portion of a light emitting device by printing. Upon formation of the EL layer, a printing chamber is pressurized to reach a pressure equal to or higher than the atmospheric pressure, and the printing chamber is filled with inert gas or set to a solvent atmosphere. Thus the difficulty in forming an EL layer by printing is eliminated.

Claims

exact text as granted — not AI-modified
1 . A film forming apparatus comprising a processing chamber for forming an electro luminescence layer, 
 wherein the processing chamber is connected to a pressure adjusting mechanism, and    wherein the processing chamber is pressurized by the pressure adjusting mechanism to reach a pressure equal to or higher than the atmospheric pressure.    
     
     
         2 . A film forming apparatus comprising a processing chamber for forming an electro luminescence layer, 
 wherein the processing chamber is connected to a compressor, and    wherein the processing chamber is pressurized by introducing gas from the compressor to reach a pressure equal to or higher than the atmospheric pressure.    
     
     
         3 . A film forming apparatus comprising a processing chamber for forming an electro luminescence layer, 
 wherein the processing chamber is connected to a compressor;    wherein the processing chamber is pressurized by introducing gas from the compressor to reach a pressure equal to or higher than the atmospheric pressure; and    wherein the processing chamber has a solvent atmosphere.    
     
     
         4 . A film forming apparatus comprising a processing chamber for forming an electro luminescence layer, 
 wherein the processing chamber is provided with a compressor, a sensor, and an exhaustion valve;    wherein the compressor introduces gas into the processing chamber; and    wherein the sensor measures the pressure in the processing chamber and inputs a signal for controlling opening and closing of the exhaustion valve.    
     
     
         5 . A film forming apparatus according to  claim 2 , wherein the gas is inert gas with a dew point of −20° C. or lower.  
     
     
         6 . A film forming apparatus according to  claim 5 , wherein the inert gas comprises nitrogen, argon, or helium.  
     
     
         7 . A film forming apparatus according to  claim 3 , wherein the gas is inert gas with a dew point of −20° C. or lower.  
     
     
         8 . A film forming apparatus according to  claim 7 , wherein the inert gas comprises nitrogen, argon, or helium.  
     
     
         9 . A film forming apparatus according to  claim 4 , wherein the gas is inert gas with a dew point of −20° C. or lower.  
     
     
         10 . A film forming apparatus according to  claim 9 , wherein the inert gas comprises nitrogen, argon, or helium.  
     
     
         11 . A film forming apparatus according to  claim 1 , wherein two or more of processing chambers are provided in the film forming apparatus.  
     
     
         12 . A film forming apparatus according to  claim 2 , wherein two or more of processing chambers are provided in the film forming apparatus.  
     
     
         13 . A film forming apparatus according to  claim 3 , wherein two or more of processing chambers are provided in the film forming apparatus.  
     
     
         14 . A film forming apparatus according to  claim 4 , wherein two or more of processing chambers are provided in the film forming apparatus.  
     
     
         15 . A film forming apparatus according to  claim 1 , wherein the pressure in the processing chamber is 1.1 to 1.5 atm.  
     
     
         16 . A film forming apparatus according to  claim 2 , wherein the pressure in the processing chamber is 1.1 to 1.5 atm.  
     
     
         17 . A film forming apparatus according to  claim 3 , wherein the pressure in the processing chamber is 1.1 to 1.5 atm.  
     
     
         18 . A film forming apparatus according to  claim 4 , wherein the pressure in the processing chamber is 1.1 to 1.5 atm.  
     
     
         19 . A film forming apparatus for forming an electro luminescence layer and a second electrode on a first electrode that is formed on an insulating surface, the apparatus comprising: 
 a first processing chamber for forming the electro luminescence layer;    a second processing chamber for drying the electro luminescence layer; and    a third processing chamber for forming the second electrode,    wherein the first processing chamber is connected to a compressor, and    wherein the first processing chamber is pressurized by introducing gas from the compressor to reach a pressure equal to or higher than the atmospheric pressure.    
     
     
         20 . A film forming apparatus for forming an electro luminescence layer and a second electrode on a first electrode that is formed on an insulating surface, the apparatus comprising: 
 a first processing chamber for forming the electro luminescence layer;    a second processing chamber for drying the electro luminescence layer; and    a third processing chamber for forming the second electrode,    wherein the first processing chamber is connected to a compressor;    wherein the first processing chamber is pressurized by introducing gas from the compressor to reach a pressure equal to or higher than the atmospheric pressure; and    wherein the first processing chamber has a solvent atmosphere.    
     
     
         21 . A film forming apparatus for forming an electro luminescence layer and a second electrode on a first electrode that is formed on an insulating surface, the apparatus comprising: 
 a first processing chamber for forming the electro luminescence layer;    a second processing chamber for drying the electro luminescence layer; and    a third processing chamber for forming the second electrode,    wherein the processing chamber is provided with a compressor, a sensor, and an exhaustion valve;    wherein the compressor introduces gas into the processing chamber; and    wherein the sensor measures the pressure in the processing chamber and inputs a signal for controlling opening and closing of the exhaustion valve.    
     
     
         22 . A film forming apparatus according to  claim 19 , wherein the gas is inert gas with a dew point of −20° C. or lower.  
     
     
         23 . A film forming apparatus according to  claim 22 , wherein the inert gas comprises nitrogen, argon, or helium.  
     
     
         24 . A film forming apparatus according to  claim 20 , wherein the gas is inert gas with a dew point of −20° C. or lower.  
     
     
         25 . A film forming apparatus according to  claim 24 , wherein the inert gas comprises nitrogen, argon, or helium.  
     
     
         26 . A film forming apparatus according to  claim 21 , wherein the gas is inert gas with a dew point of −20° C. or lower.  
     
     
         27 . A film forming apparatus according to  claim 26 , wherein the inert gas comprises nitrogen, argon, or helium.  
     
     
         28 . A film forming apparatus according to  claim 19 , wherein two or more of first processing chambers are provided in the film forming apparatus.  
     
     
         29 . A film forming apparatus according to  claim 20 , wherein two or more of first processing chambers are provided in the film forming apparatus.  
     
     
         30 . A film forming apparatus according to  claim 21 , wherein more of first processing chambers are provided in the film forming apparatus.  
     
     
         31 . A film forming apparatus according to  claim 19 , wherein the pressure in the first processing chamber is 1.1 to 1.5 atm.  
     
     
         32 . A film forming apparatus according to  claim 20 , wherein the pressure in the first processing chamber is 1.1 to 1.5 atm.  
     
     
         33 . A film forming apparatus according to  claim 21 , wherein the pressure in the first processing chamber is 1.1 to 1.5 atm. 1.  
     
     
         34 - 45 . (canceled)

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