US2005255689A1PendingUtilityA1

Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers

48
Assignee: IYER RAVIPriority: Apr 17, 1997Filed: Jul 6, 2005Published: Nov 17, 2005
Est. expiryApr 17, 2017(expired)· nominal 20-yr term from priority
Inventors:Ravi Iyer
H10P 14/6924H10P 14/6923H10P 14/6922H10P 14/6336H10P 14/6334H10P 14/6532H10P 14/6506H10P 14/662H10W 20/098H10W 20/096H10W 20/077H10P 14/69215C23C 16/0245C23C 16/401C23C 16/56C23C 16/0272C03C 17/02
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Claims

Abstract

A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O 3 is provided, comprising placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber.

Claims

exact text as granted — not AI-modified
1 . An in-process semiconductor wafer in a vapor deposition chamber having a plasma generator comprising: 
 a silicate glass base layer having an upper surface formed by flowing a gaseous mixture comprising TEOS and oxygen during generating a plasma, the silicate glass base layer having carbon particles in the upper surface subjected to a plasma ignited in a gaseous atmosphere in the vapor deposition chamber containing a mixture of oxygen and a diamagnetic, oxygen-containing oxidant for a period sufficient to convert the carbon particles to a carbon-containing gas for removal from the vapor deposition chamber; and    a glass layer on the upper surface from flowing TEOS gas and ozone gas.    
   
   
       2 . The in-process semiconductor wafer of  claim 1 , wherein the diamagnetic, oxygen-containing oxidant is selected from the group consisting of ozone and hydrogen peroxide.  
   
   
       3 . The in-process semiconductor wafer of  claim 1 , wherein a thickness of the silicate glass base layer is within a range of 100-1000 Å.  
   
   
       4 . The in-process semiconductor wafer of  claim 1 , wherein the plasma ignited in the gaseous atmosphere containing the diamagnetic, oxygen-containing oxidant is maintained at a power density setting within a range of about 0.7 to 3.0 watts/cm 2 .  
   
   
       5 . The in-process semiconductor wafer of  claim 1 , wherein the silicate glass base layer is subjected to the plasma ignited in the gaseous atmosphere for a period of 30 to 360 seconds.  
   
   
       6 . The in-process semiconductor wafer of  claim 1 , wherein the glass layer is deposited at a temperature within a range of about 300 to 600° C.  
   
   
       7 . The in-process semiconductor wafer of  claim 1 , wherein the another glass layer is deposited at pressures within a range of about 10 to 760 torr.  
   
   
       8 . A TEOS silicate glass layer on an in-process semiconductor wafer in a deposition chamber comprising: 
 a silicate glass base layer having an upper surface formed when flowing a gaseous mixture comprising at least TEOS and oxygen into the deposition chamber in a plasma, the silicate glass base layer having carbon particle impurities on the upper surface thereof subjected to a plasma ignited in a gaseous atmosphere in the deposition chamber containing a mixture of oxygen and a diamagnetic, oxygen-containing oxidant; and    forming another glass layer over the silicate glass base layer during a chemical vapor deposition reaction between TEOS gas and ozone gas.    
   
   
       9 . The TEOS silicate glass layer on an in-process semiconductor wafer of  claim 8 , wherein the diamagnetic, oxygen-containing oxidant is selected from the group consisting of ozone and hydrogen peroxide.  
   
   
       10 . The TEOS silicate glass layer on an in-process semiconductor wafer of  claim 8 , wherein a thickness of the silicate glass base layer is within a range of about 100-1000 Å.  
   
   
       11 . The TEOS silicate glass layer on an in-process semiconductor wafer of  claim 8 , wherein the plasma ignited in the gaseous atmosphere containing the diamagnetic, oxygen-containing oxidant is maintained at a power density setting within a range of about 0.7 to 3.0 watts/cm 2 .  
   
   
       12 . The TEOS silicate glass layer on an in-process semiconductor wafer of  claim 8 , wherein the silicate glass base layer is subjected to the plasma ignited in the gaseous atmosphere for a period of 30 to 360 seconds.  
   
   
       13 . The TEOS silicate glass layer on an in-process semiconductor wafer of  claim 8 , wherein the another glass layer is deposited at a temperature within a range of about 300 to 600° C.  
   
   
       14 . The TEOS silicate glass layer on an in-process semiconductor wafer of  claim 8 , wherein the another glass layer is deposited at pressures within a range of about 10 to 760 torr.  
   
   
       15 . A semiconductor wafer in a vapor deposition chamber having a plasma generator comprising: 
 a silicate glass base layer having an upper surface formed by flowing a gaseous mixture comprising TEOS and oxygen during a plasma, the silicate glass base layer having carbon particles in the upper surface subjected to a plasma ignited in a gaseous atmosphere in the chemical vapor deposition chamber containing a mixture of oxygen and a diamagnetic, oxygen-containing oxidant; and    a glass layer on the upper surface formed from flowing TEOS gas and ozone gas.    
   
   
       16 . The semiconductor wafer of  claim 15 , wherein the diamagnetic, oxygen-containing oxidant is selected from the group consisting of ozone and hydrogen peroxide.  
   
   
       17 . The semiconductor wafer of  claim 15 , wherein a thickness of the silicate glass base layer is within a range of 100-1000 Å.  
   
   
       18 . The semiconductor wafer of  claim 15 , wherein the plasma ignited in the gaseous atmosphere containing the diamagnetic, oxygen-containing oxidant is maintained at a power density setting within a range of about 0.7 to 3.0 watts/cm 2 .  
   
   
       19 . The semiconductor wafer of  claim 15 , wherein the silicate glass base layer is subjected to the plasma ignited in the gaseous atmosphere for a period of 30 to 360 seconds.  
   
   
       20 . The semiconductor wafer of  claim 15 , wherein the glass layer is deposited at a temperature within a range of about 300 to 600° C.  
   
   
       21 . The semiconductor wafer of  claim 15 , wherein the glass layer is deposited at pressures within a range of about 10 to 760 torr.  
   
   
       22 . A TEOS silicate glass layer on a semiconductor wafer in a deposition chamber comprising: 
 a silicate glass base layer having an upper surface formed when flowing a gaseous mixture comprising at least TEOS and oxygen into the deposition chamber in a plasma, the silicate glass base layer having carbon particle impurities on the upper surface thereof subjected to a plasma ignited in a gaseous atmosphere in the deposition chamber containing a mixture of oxygen and a diamagnetic, oxygen-containing oxidant; and    forming another glass layer over the silicate glass base layer during a chemical vapor deposition reaction between TEOS gas and ozone gas.    
   
   
       23 . The TEOS silicate glass layer on the semiconductor wafer of  claim 22 , wherein the diamagnetic, oxygen-containing oxidant is selected from the group consisting of ozone and hydrogen peroxide.  
   
   
       24 . The TEOS silicate glass layer on the semiconductor wafer of  claim 22 , wherein a thickness of the silicate glass base layer is within a range of about 100-1000 Å.  
   
   
       25 . The TEOS silicate glass layer on the semiconductor wafer of  claim 22 , wherein the plasma ignited in the gaseous atmosphere containing the diamagnetic, oxygen-containing oxidant is maintained at a power density setting within a range of about 0.7 to 3.0 watts/cm 2 .  
   
   
       26 . The TEOS silicate glass layer on the semiconductor wafer of  claim 22 , wherein the silicate glass base layer is subjected to the plasma ignited in the gaseous atmosphere for a period of 30 to 360 seconds.  
   
   
       27 . The TEOS silicate glass layer on the semiconductor wafer of  claim 22 , wherein the another glass layer is deposited at a temperature within a range of about 300 to 600° C.  
   
   
       28 . The TEOS silicate glass layer on the semiconductor wafer of  claim 22 , wherein the another glass layer is deposited at pressures within a range of about 10 to 760 torr.  
   
   
       29 . A portion of a semiconductor wafer in a vapor deposition chamber having a plasma generator comprising: 
 a silicate glass base layer having an upper surface formed by flowing a gaseous mixture comprising TEOS and oxygen during a plasma, the silicate glass base layer having carbon particles in the upper surface subjected to a plasma ignited in a gaseous atmosphere in the chemical vapor deposition chamber containing a mixture of oxygen and a diamagnetic, oxygen-containing oxidant; and    a glass layer on the upper surface formed from flowing TEOS gas and ozone gas.    
   
   
       30 . The portion of the semiconductor wafer of  claim 29 , wherein the diamagnetic, oxygen-containing oxidant is selected from the group consisting of ozone and hydrogen peroxide.  
   
   
       31 . The portion of the semiconductor wafer of  claim 29 , wherein a thickness of the silicate glass base layer is within a range of 100-1000 Å.  
   
   
       32 . The portion of the semiconductor wafer of  claim 29 , wherein the plasma ignited in the gaseous atmosphere containing the diamagnetic, oxygen-containing oxidant is maintained at a power density setting within a range of about 0.7 to 3.0 watts/cm 2 .  
   
   
       33 . The portion of the semiconductor wafer of  claim 29 , wherein the silicate glass base layer is subjected to the plasma ignited in the gaseous atmosphere for a period of 30 to 360 seconds.  
   
   
       34 . The portion of the semiconductor wafer of  claim 29 , wherein the glass layer is deposited at a temperature within a range of about 300 to 600° C.  
   
   
       35 . The portion of the semiconductor wafer of  claim 29 , wherein the glass layer is deposited at pressures within a range of about 10 to 760 torr.  
   
   
       36 . A TEOS silicate glass layer on a portion of a semiconductor wafer in a deposition chamber comprising: 
 a silicate glass base layer having an upper surface formed when flowing a gaseous mixture comprising at least TEOS and oxygen into the deposition chamber in a plasma, the silicate glass base layer having carbon particle impurities on the upper surface thereof subjected to a plasma ignited in a gaseous atmosphere in the deposition chamber containing a mixture of oxygen and a diamagnetic, oxygen-containing oxidant; and    forming another glass layer over the silicate glass base layer during a chemical vapor deposition reaction between TEOS gas and ozone gas.    
   
   
       37 . The TEOS silicate glass layer on the portion of the semiconductor wafer of  claim 36 , wherein the diamagnetic, oxygen-containing oxidant is selected from the group consisting of ozone and hydrogen peroxide.  
   
   
       38 . The TEOS silicate glass layer on the portion of the semiconductor wafer of  claim 36 , wherein a thickness of the silicate glass base layer is within a range of about 100-1000 Å.  
   
   
       39 . The TEOS silicate glass layer on the portion of the semiconductor wafer of  claim 36 , wherein the plasma ignited in the gaseous atmosphere containing the diamagnetic, oxygen-containing oxidant is maintained at a power density setting within a range of about 0.7 to 3.0 watts/cm 2 .  
   
   
       40 . The TEOS silicate glass layer on the portion of the semiconductor wafer of  claim 36 , wherein the silicate glass base layer is subjected to the plasma ignited in the gaseous atmosphere for a period of 30 to 360 seconds.  
   
   
       41 . The TEOS silicate glass layer on the portion of the semiconductor wafer of  claim 36 , wherein the another glass layer is deposited at a temperature within a range of about 300 to 600° C.  
   
   
       42 . The TEOS silicate glass layer on the portion of the semiconductor wafer of  claim 36 , wherein the another glass layer is deposited at pressures within a range of about 10 to 760 torr.  
   
   
       43 . A work piece of semiconductor material in a vapor deposition chamber having a plasma generator comprising: 
 a silicate glass base layer having an upper surface formed by flowing a gaseous mixture comprising TEOS and oxygen during a plasma, the silicate glass base layer having carbon particles in the upper surface subjected to a plasma ignited in a gaseous atmosphere in the vapor deposition chamber containing a mixture of oxygen and a diamagnetic, oxygen-containing oxidant; and    a glass layer on the upper surface formed from flowing TEOS gas and ozone gas.    
   
   
       44 . The work piece of  claim 43 , wherein the diamagnetic, oxygen-containing oxidant is selected from the group consisting of ozone and hydrogen peroxide.  
   
   
       45 . The work piece of  claim 43 , wherein a thickness of the silicate glass base layer is within a range of 100-1000 Å.  
   
   
       46 . The work piece of  claim 43 , wherein the plasma ignited in the gaseous atmosphere containing the diamagnetic, oxygen-containing oxidant is maintained at a power density setting within a range of about 0.7 to 3.0 watts/cm 2 .  
   
   
       47 . The work piece of  claim 43 , wherein the silicate glass base layer is subjected to the plasma ignited in the gaseous atmosphere for a period of 30 to 360 seconds.  
   
   
       48 . The work piece of  claim 43 , wherein the glass layer is deposited at a temperature within a range of about 300 to 600° C.  
   
   
       49 . The work piece of  claim 43 , wherein the glass layer is deposited at pressures within a range of about 10 to 760 torr.  
   
   
       50 . A work piece having TEOS silicate glass layer on a semiconductor material in a deposition chamber comprising: 
 a silicate glass base layer having an upper surface formed when flowing a gaseous mixture comprising at least TEOS and oxygen into the deposition chamber in a plasma, the silicate glass base layer having carbon particle impurities on the upper surface thereof subjected to a plasma ignited in a gaseous atmosphere in the deposition chamber containing a mixture of oxygen and a diamagnetic, oxygen-containing oxidant; and    forming another glass layer over the silicate glass base layer during a chemical vapor deposition reaction between TEOS gas and ozone gas.    
   
   
       51 . The work piece of  claim 50 , wherein the diamagnetic, oxygen-containing oxidant is selected from the group consisting of ozone and hydrogen peroxide.  
   
   
       52 . The work piece of  claim 50 , wherein a thickness of the silicate glass base layer is within a range of about 100-1000 Å.  
   
   
       53 . The work piece of  claim 50 , wherein the plasma ignited in the gaseous atmosphere containing the diamagnetic, oxygen-containing oxidant is maintained at a power density setting within a range of about 0.7 to 3.0 watts/cm 2 .  
   
   
       54 . The work piece of  claim 50 , wherein the silicate glass base layer is subjected to the plasma ignited in the gaseous atmosphere for a period of 30 to 360 seconds.  
   
   
       55 . The work piece of  claim 50 , wherein the another glass layer is deposited at a temperature within a range of about 300 to 600° C.  
   
   
       56 . The work piece of  claim 50 , wherein the another glass layer is deposited at pressures within a range of about 10 to 760 torr.

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