US2005254309A1PendingUtilityA1

Program method of non-volatile memory device

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Assignee: KWON OH-SUKPriority: May 17, 2004Filed: Oct 29, 2004Published: Nov 17, 2005
Est. expiryMay 17, 2024(expired)· nominal 20-yr term from priority
Inventors:Oh-Suk KwonJune Lee
G11C 16/0483G11C 16/3418G11C 16/10G11C 16/12G11C 16/3427G11C 16/08
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Claims

Abstract

A program method of a non-volatile memory device comprises setting a string select line to a predetermined voltage, setting a selected word line to a program voltage and unselected word lines to a pass voltage respectively. The program voltage is varied according to an arrangement of the selected word line. Problems arising from capacitive coupling between adjacent signal lines are alleviated.

Claims

exact text as granted — not AI-modified
1 . A program method of a non-volatile memory device comprising the steps of: 
 setting a string select line to a predetermined voltage; and    setting a selected word line to a program voltage and unselected word lines to a pass voltage respectively,    wherein the program voltage is varied according to an arrangement of the selected word line.    
   
   
       2 . The program method of  claim 1 , wherein when one of the unselected word lines is adjacent to the string select line, a voltage lower than the pass voltage is supplied to the adjacent unselected word line to the string select line.  
   
   
       3 . The program method of  claim 2 , wherein the predetermined voltage is lower than the voltage supplied to the adjacent unselected word line to the string select line.  
   
   
       4 . The program method of  claim 2 , wherein the string select line is set to the predetermined voltage before the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       5 . The program method of  claim 4 , further comprising the step of setting each of a plurality of bit lines to either a power supply voltage or a ground voltage according to data to be programmed after the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       6 . The program method of  claim 2 , wherein the string select line is set to the predetermined voltage after the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       7 . The program method of  claim 6 , further comprising the step of setting each of a plurality of bit lines to either a power supply voltage or a ground voltage according to data to be programmed before the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       8 . A program method of a non-volatile memory device comprising the steps of: 
 setting a string select line to a predetermined voltage; and    setting a selected word line to a first program voltage and unselected word lines to a first pass voltage respectively,    wherein either one of a second program voltage and a second pass voltage is supplied to one of the selected and unselected word lines adjacent to the string select line, the first program voltage being higher than the second program voltage and the first pass voltage being higher than the second pass voltage.    
   
   
       9 . The program method of  claim 8 , wherein the first program voltage is supplied to the selected word line after the selected word line is set to the first pass voltage.  
   
   
       10 . The program method of  claim 8 , wherein the first program voltage is supplied to the selected word line while the first and second pass voltages are supplied to corresponding unselected word lines.  
   
   
       11 . The program method of  claim 8 , wherein when the selected word line is adjacent to the string select line, the selected word line is set to the second program voltage.  
   
   
       12 . The program method of  claim 8 , wherein the string select line is set to the predetermined voltage before the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       13 . The program method of  claim 12 , further comprising the step of setting each of a plurality of bit lines to either a power supply voltage or a ground voltage according to data to be programmed after the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       14 . The program method of  claim 8 , wherein the string select line is set to the predetermined voltage after the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       15 . The program method of  claim 14 , further comprising the step of setting each of a plurality of bit lines to either a power supply voltage or a ground voltage according to data to be programmed before the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       16 . The program method of  claim 8 , wherein the predetermined voltage is lower than the second pass voltage.  
   
   
       17 . A program method of a non-volatile memory device comprising the steps of: 
 setting a string select line to a predetermined voltage after setting bit lines to a pre-charge voltage, respectively;    supplying a first pass voltage to selected and unselected word lines after setting the string select line to the predetermined voltage; and    supplying a first program voltage to the selected word line after supplying the first pass voltage to the selected and unselected word lines,    wherein when one of the unselected word lines is adjacent to the string select line, a second pass voltage lower than the first pass voltage is supplied to the adjacent unselected word line to the string select line.    
   
   
       18 . The program method of  claim 17 , wherein when the selected word line is adjacent to the string select line, a second program voltage lower than the first program voltage is supplied to the selected word line.  
   
   
       19 . A program method of a non-volatile memory device comprising the steps of: 
 setting a string select line to a predetermined voltage; and    setting a selected word line to a first program voltage and unselected word lines to a first pass voltage,    wherein when one of the unselected word lines is adjacent to the string select line, the adjacent unselected word line to the string select line is set to a second pass voltage lower than the first pass voltage.    
   
   
       20 . The program method of  claim 19 , wherein the string select line is set to the predetermined voltage before the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       21 . The program method of  claim 20 , further comprising the step of setting each of a plurality of bit lines to either a power supply voltage or a ground voltage according to data to be programmed after the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       22 . The program method of  claim 19 , wherein the string select line is set to the predetermined voltage after the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       23 . The program method of  claim 22 , further comprising the step of setting each of a plurality of bit lines to either a power supply voltage or a ground voltage according to data to be programmed before the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       24 . The program method of  claim 19 , wherein the predetermined voltage is lower than the second pass voltage.  
   
   
       25 . A program method of a non-volatile memory device comprising the steps of: 
 setting a string select line to a predetermined voltage; and    setting a selected word line to a first program voltage and unselected word lines to a pass voltage,    wherein when the selected word line is adjacent to the string select line, the selected word line is set to a second program voltage lower than the first program voltage.    
   
   
       26 . The program method of  claim 25 , wherein the string select line is set to the predetermined voltage before the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       27 . The program method of  claim 26 , further comprising the step of setting each of a plurality of bit lines to either a power supply voltage or a ground voltage according to data to be programmed after the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       28 . The program method of  claim 25 , wherein the string select line is set to the predetermined voltage after the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       29 . The program method of  claim 28 , further comprising the step of setting each of a plurality of bit lines to either a power supply voltage or a ground voltage according to data to be programmed before the selected and unselected word lines are set to corresponding voltages, respectively.  
   
   
       30 . The program method of  claim 25 , wherein the predetermined voltage is lower than the pass voltage.

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