US2005253243A1PendingUtilityA1

Semiconductor device structure with adhesion-enhanced semiconductor die

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Individually held — no corporate assignee on recordPriority: Sep 14, 1994Filed: Jul 22, 2005Published: Nov 17, 2005
Est. expirySep 14, 2014(expired)· nominal 20-yr term from priority
Inventors:Jerrold L. KingJ. Mike BrooksWalter L. Moden
H10W 74/00H10W 74/10H10W 72/865H10W 72/5363H10W 72/536H10W 90/756H10W 72/951H10W 72/075H10W 72/321H10W 72/07352H10W 90/736H10W 70/415H10W 74/127Y10S438/928Y10S438/926
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Claims

Abstract

A semiconductor die includes a substantially oxide-free metal layer on at least a portion of a surface thereof. The substantially oxide-free metal may enhance adhesion of a packaging material, or mold compound, to the semiconductor die, prevent the occurrence of voids or presence of moisture between the packaging material and the adjacent surface of the semiconductor die, or otherwise prevent delamination of the packaging material from the adjacent surface of the semiconductor die. The substantially oxide-free metal may be copper, palladium, another substantially oxide-free metal, or a combination of substantially oxide-free metals.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device configured for enhanced adhesion to packaging material comprising: 
 a semiconductor die with a back side;    at least one substantially oxide-free metal in contact with at least a portion of the back side; and    packaging material adjacent to at least a portion of the at least one substantially oxide-free metal.    
     
     
         2 . The semiconductor device of  claim 1 , further comprising: 
 leads secured in place relative to a remainder of the semiconductor device.    
     
     
         3 . The semiconductor device of  claim 2 , wherein the leads are secured directly to the remainder of the semiconductor device in a leads-over-chip arrangement.  
     
     
         4 . The semiconductor device of  claim 1 , wherein the packaging material comprises a plastic molding material.  
     
     
         5 . The semiconductor device of  claim 4 , wherein the plastic molding material comprises a thermoset epoxy material.  
     
     
         6 . The semiconductor device of  claim 1 , wherein the at least one substantially oxide-free metal comprises palladium or copper.  
     
     
         7 . The semiconductor device of  claim 1 , wherein the at least one substantially oxide-free metal comprises a plurality of metals.  
     
     
         8 . The semiconductor device of  claim 7 , wherein the plurality of metals comprises copper in contact with the back side.  
     
     
         9 . The semiconductor device of  claim 8 , wherein the copper has a thickness of approximately 50 micro inches.  
     
     
         10 . The semiconductor device of  claim 8 , wherein the plurality of metals comprises palladium in contact with the copper.  
     
     
         11 . The semiconductor device of  claim 10 , wherein the palladium also contacts the packaging material.  
     
     
         12 . The semiconductor device of  claim 10 , wherein the palladium has a thickness of approximately 2 to 3 micro inches.  
     
     
         13 . A semiconductor device structure, comprising: 
 a semiconductor die with a back side;    an adhesion-enhancing layer comprising at least one substantially oxide-free metal contacting the back side; and    packaging material contacting the at least one substantially oxide-free metal with substantially no voids located or moisture trapped between an entire extent of an interface between the substantially oxide-free metal and the packaging material.    
     
     
         14 . The semiconductor device structure of  claim 13 , wherein the substantially oxide-free metal comprises copper or palladium.  
     
     
         15 . The semiconductor device structure of  claim 14 , wherein the substantially oxide-free metal comprises copper having a thickness of approximately 50 micro inches.  
     
     
         16 . The semiconductor device structure of  claim 14 , wherein the substantially oxide-free metal comprises palladium having a thickness of approximately 2 to 3 micro inches.  
     
     
         17 . The semiconductor device structure of  claim 15 , wherein the substantially oxide-free metal comprises copper and palladium.  
     
     
         18 . The semiconductor device structure of  claim 17 , wherein the copper contacts the back side of the semiconductor die.  
     
     
         19 . The semiconductor device structure of  claim 18 , wherein the palladium contacts the copper.  
     
     
         20 . The semiconductor device structure of  claim 19 , wherein the palladium contacts the packaging material.

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