System and method for processing semiconductor wafers using different wafer processes

Abstract

A system and method for processing semiconductor wafers using different wafer processes utilizes multiple processing assemblies to efficiently perform these wafer processes. The wafer processes performed by the processing assemblies may vary with respect to operating parameters or the types of wafer processes, which allows customization of the wafer processes. Each of the processing assemblies is configured to sequentially process two or more semiconductor wafers at different processing positions by sequentially transferring the semiconductor wafers to the different processing positions using a wafer transfer carousel. As the semiconductor wafers are processed at one of the processing assemblies, the processed semiconductor wafers are sequentially transferred to the next processing assembly in an efficient manner. The sequential processing of the semiconductor wafers at each of the processing assemblies and the sequential transferring of the wafers contribute to an increased throughput.

1 - 30 . (canceled)  
   
   
       31 . A system for processing substrates comprising: 
 a plurality of processing assemblies configured to process the substrates, each processing assembly comprising: 
 a transfer mechanism having a plurality of carriers each configured to hold a substrate, the transfer mechanism configured to move the carriers such that the substrates move to different processing positions; and  
 a processing unit operatively associated with the transfer mechanism, the processing unit configured to process the substrates transferred to the different processing positions by the carriers of the transfer mechanism;  
   a robot configured to unload the substrate from a first one of the plurality of object processing assemblies and to transfer the substrate to a second one of the plurality of object processing assemblies wherein the robot directly transfers the substrate between the first one of the plurality of object processing assemblies and the second one of the plurality of object processing assemblies.    
   
   
       32 . The system of  claim 31 , wherein the transfer mechanism includes a carousel which rotates thereby moving the carriers in a substantially circular path.  
   
   
       33 . The system of  claim 31 , further comprising a second robot between two selected processing assemblies of the plurality of processing assemblies, the second robot transferring the substrate between the two selected processing assemblies, wherein the second robot and the robot are situated on opposite sides of the system.  
   
   
       34 . The system of  claim 31 , wherein the processing unit is configured to perform a process selected from a group consisting of polishing, wet etching, electroplating, cleaning, thickness measuring, heating, coating and treating.  
   
   
       35 . The system of  claim 31 , wherein the processing unit of one of the processing assemblies includes a plurality of sub-processing units to process the substrate.  
   
   
       36 . The system of  claim 35 , wherein at least one of the sub-processing units is configured to perform a process selected from a group consisting of polishing, wet etching, electroplating, cleaning, thickness measuring, heating, coating and treating.  
   
   
       37 . The system of  claim 35 , wherein at least one of the sub-processing units is configured to process the substrate when the substrate is placed on the at least one of the sub-processing units with a surface to be processed facing away from the at least one of the sub-processing units.  
   
   
       38 . The system of  claim 35 , wherein at least one of the sub-processing units is configured to process the substrate held by one of the plurality of carriers associated with said sub-processing units.  
   
   
       39 . The system of  claim 31 , further comprising a processing station operatively associated with the robot, the processing station processing the substrate placed on the processing station.  
   
   
       40 . The system of  claim 39 , wherein the processing station is configured to process two or more substrates in parallel.  
   
   
       41 . The system of  claim 39 , wherein the processing station is configured to perform a process selected from a group consisting of cleaning and thickness measuring.