Sputtering target, Al wiring film and electronic component

Abstract

A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 μm. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.

1 . A method of manufacturing a sputtering target, comprising: 
 forming a raw material of the sputtering target containing Al and at least one of element that forms an intermetallic compound with Al by using an inert gas including Ar or Kr; and    machining the raw material to obtain the sputtering target.    
   
   
       2 . The method of manufacturing a sputtering target as set forth in  claim 1:   wherein the raw material forming process comprises a process of casting a molten metal containing Al and the element that forms the intermetallic compound, the molten metal being bubbled by the inert gas including Ar or Kr.    
   
   
       3 . The method of manufacturing a sputtering target as set forth in  claim 2:   wherein the molten metal contains the element that forms the intermetallic compound in a range of 0.1 to 50% by weight.    
   
   
       4 . The method of manufacturing a sputtering target as set forth in  claim 1:   wherein the raw material forming process comprises a process of sintering a compounded body containing Al and the element that forms the intermetallic compound in the inert gas atmosphere including Ar or Kr.    
   
   
       5 . The method of manufacturing a sputtering target as set forth in  claim 4:   wherein the compounded body contains the element that forms the intermetallic compound in a range of 0.1 to 50% by weight.    
   
   
       6 . The method of manufacturing a sputtering target as set forth in  claim 1:   wherein the raw material is formed by a fusion method, a powder metallurgy method, or a quench hardening method.    
   
   
       7 . The method of manufacturing a sputtering target as set forth in  claim 6:   wherein the quench hardening method is a spray forming method.    
   
   
       8 . The method of manufacturing a sputtering target as set forth in  claim 1:   wherein the sputtering target contains at least one of element selected from Cu, Si, Sc, Y, La, Ce, Nd, Sm, Gd, Th, Dy, Er, Pt, Ir, Ru, Pd, Ti, Zr, V, Nb, Ta, Fe, Ni, Cr, Mo, W, Mn, Tc, Re and B as the element that forms the intermetallic compound.    
   
   
       9 . The method of manufacturing a sputtering target as set forth in  claim 1:   wherein the sputtering target contains the element that forms the intermetallic compound in a range of 0.1 to 50% by weight.    
   
   
       10 . The method of manufacturing a sputtering target as set forth in  claim 1:   wherein the sputtering target contains the element that forms the intermetallic compound in a range of 0.1 to 20% by weight.