Light-emitting semiconductor device and method of fabrication

Abstract

A low-resistance silicon baseplate ( 11 ) has formed thereon a buffer layer 12 in the form of an alternating lamination of AlN sublayers ( 12 a ) and GaN sublayers ( 12 b ). On this buffer layer there are formed an n-type semiconductor region ( 13 ) of gallium nitride, an active layer ( 14 ) of gallium indium nitride, and a p-type semiconductor region ( 15 ) of galliumnitride, in that order. An anode ( 17 ) is formed on the p-type semiconductor region ( 15 ), and a cathode ( 18 ) on the baseplate ( 11 ).

1 - 5 . (canceled)  
   
   
       6 . A semiconductor apparatus having a gallium nitride-based compound semiconductor and a silicon, the apparatus comprising: 
 (a) a baseplate comprising a silicon;    (b) a first semiconductor device formed on one major surface of said baseplate, said first semiconductor device containing a plurality of gallium nitride-based compound semiconductors; and    (c) a second semiconductor device formed in said baseplate.    
   
   
       7 . The semiconductor apparatus of  claim 6 , wherein said first semiconductor device comprises a light-emitting semiconductor device.  
   
   
       8 . A semiconductor apparatus having a gallium nitride-based compound semiconductor and a silicon, the apparatus comprising: 
 (A) a baseplate comprising a silicon;    (B) a buffer layer formed one major surface of said baseplate, said buffer layer comprising an alternating lamination of a plurality of first sublayers and second sublayers: 
 (a) each said first sublayer composed of Al x Ga 1-x N, where 0<x≦1, each said first sublayer having a thickness ranging from about 5×10 −4  micrometers to about 100×10 −4  micrometers and having a quantum-mechanical tunnel effect;  
 (b) each said second sublayer composed of GaN or Al y Ga 1-y N, where y<x and 0<y<1, each second sublayer containing n-type impurities comprising silicon and having an electrical conductivity and a thickness ranging from about 5×10 −4  micrometers to about 2000×10 −4  micrometers;  
   (C) a first semiconductor device formed on said buffer layer, said first semiconductor device containing a plurality of gallium nitride-based compound semiconductors; and    (D) a second semiconductor device formed in said baseplate.    
   
   
       9 . A method of fabricating a semiconductor apparatus having a gallium nitride-based compound semiconductor and a silicon, the method comprising: 
 (a) providing a baseplate of monocrystalline silicon;    (b) forming on one major surface of said baseplate by a vapor phase growth method a first semiconductor device composed of a plurality of gallium nitride-based compound layers; and    (c) forming in said baseplate a second semiconductor device.