US2005241569A1PendingUtilityA1
Crystallization method and crystallization apparatus
Est. expiryApr 5, 2024(expired)· nominal 20-yr term from priority
C30B 29/12G03F 7/70958Y10T117/102G02B 1/02C30B 11/00Y10T117/1008Y10T117/10
39
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Claims
Abstract
A crystallization method includes the steps of melting a crystallized material in a crucible by heating, and growing a crystal by cooling and coagulating the melted material, wherein said melting step includes introducing a predetermined gas into the melted material.
Claims
exact text as granted — not AI-modified1 . A crystallization method comprising the steps of:
melting a crystallized material in a crucible by heating; and growing a crystal by cooling and coagulating the melted material, wherein said melting step includes introducing a predetermined gas into the melted material.
2 . A crystallization method according to claim 1 , wherein said crystallized material is a calcium fluoride with an added scavenger, and the gas that introduced into the melted fluorite is an inert gas.
3 . A crystallization method according to claim 2 , wherein said inert gas is a helium gas.
4 . A crystallization method according to claim 2 , wherein said crystallized material is a single crystal that does not have a grain boundary.
5 . An optical element made of a single crystal, said single crystal being manufactured by a crystallization method that includes:
melting a crystallized material in a crucible by heating; and growing a crystal by cooling and coagulating the melted material, wherein said melting step includes introducing a predetermined gas into the melted material, and wherein said crystallized material is a calcium fluoride with an added scavenger, and the gas that introduced into the melted fluorite is an inert gas.
6 . An exposure apparatus comprising:
a light source; an illumination optical system for guiding a light from the light source to a reticle; and a projection optical system for guiding the light from the reticle to a wafer that is placed on a wafer stage, wherein said illumination optical system or the projection optical system includes an optical element, and wherein said optical element is made of a single crystal, said single crystal being manufactured by a crystallization method that includes: melting a crystallized material in a crucible by heating; and growing a crystal by cooling and coagulating the melted material, wherein said melting step includes introducing a predetermined gas into the melted material, and wherein said crystallized material is a calcium fluoride with an added scavenger, and the gas that introduced into the melted fluorite is an inert gas.
7 . A crystallization method according to claim 1 , wherein said crystallized material is a lithium tantalate crystal or a lithium niobic acid, and the gas introduced into the melted lithium tantalate crystal or the lithium niobic acid is an oxygen or inert gas.
8 . A crystallization method according to claim 7 , wherein said inert gas is a helium gas.
9 . A crystallization apparatus comprising:
a crucible arranged in a predetermined temperature distribution, and houses a melted crystallized material; and a gas introducing part for introducing a gas into the melted crystallized material, wherein the crystallization apparatus coagulates the melted crystallized material in one direction by changing the temperature distribution relatively to the crucible.
10 . A crystallization apparatus comprising:
a crucible heated at a predetermined temperature which houses a melted crystallized material; and a gas introducing part for introducing a gas into the melted crystallized material, wherein the crystallization apparatus grows a crystal by lifting a member that contacts with the melted crystallized material.
11 . A crystallization apparatus according to claims 9 or 10 , wherein the gas is an inert gas.Join the waitlist — get patent alerts
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