US2005239953A1PendingUtilityA1

Radiation curable composition, storing method thereof, forming method of cured film, patterning method, use of pattern, electronic components and optical waveguide

Assignee: HITACHI CHEMICAL CO LTDPriority: Oct 7, 2003Filed: Jun 27, 2005Published: Oct 27, 2005
Est. expiryOct 7, 2023(expired)· nominal 20-yr term from priority
G03F 7/075G03F 7/0045G03F 7/004G03F 7/0048G03F 7/0043G03F 7/0041G03F 7/0757G03F 7/0047G03F 7/0042
47
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Claims

Abstract

The present invention provides a radiation curing composition comprising (a): a siloxane resin, (b): a photoacid generator or photobase generator, and (c): a solvent capable of dissolving component (a) and containing an aprotic solvent.

Claims

exact text as granted — not AI-modified
1 - 25 . (canceled)  
   
   
       26 . A radiation curable composition comprising 
 (a) a siloxane resin,    (b) a photoacid generator or photobase generator, and    (c) a solvent capable of dissolving component (a) and containing an aprotic solvent including an ether-based solvent.    
   
   
       27 . A radiation curable composition according to  claim 26 , wherein said siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):  
       R 1   n SiX 4-n   (1)  
     wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R′ may be the same or different, and when n is 0-2, each X may be the same or different.  
   
   
       28 . A radiation curable composition according to  claim 26 , further comprises (d): a curing acceleration catalyst.  
   
   
       29 . A radiation curable composition according to  claim 28 , wherein said curing acceleration catalyst is an onium salt.  
   
   
       30 . A radiation curable composition according to  claim 28 , wherein said curing acceleration catalyst is a quaternary ammonium salt.  
   
   
       31 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition according to  claim 26  onto a substrate and drying the composition to obtain a coating, and    exposing said coating, without heating of said coating after said exposure step.    
   
   
       32 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition according to  claim 26  onto a substrate and drying the composition to obtain a coating,    exposing said coating, and    heating said coating after said exposure step.    
   
   
       33 . A patterning method comprising steps of: 
 applying a radiation curable composition according to  claim 26  onto a substrate and drying the composition to obtain a coating,    exposing said coating via a mask and    removing the unexposed sections by development, without heating of the coating after said exposure step.    
   
   
       34 . A patterning method comprising steps of 
 applying a radiation curable composition according to  claim 26  onto a substrate and drying the composition to obtain a coating,    exposing said coating via a mask,    heating said coating after said exposure step and    removing the unexposed sections of said coating by development after said heating step.    
   
   
       35 . A patterning method according to  claim 33 , wherein tetramethylammonium hydroxide solution is used as the developing solution in the removal step.  
   
   
       36 . An use of a pattern wherein a pattern formed by a patterning method according to  claim 33  is used as a resist mask.  
   
   
       37 . An electronic component possessing a cured film formed by a forming method of a cured film according to  claim 31 .  
   
   
       38 . An optical waveguide possessing a cured film formed by a forming method of a cured film according to  claim 31 .  
   
   
       39 . An electronic component possessing a pattern formed by a patterning method according to  claim 33 .  
   
   
       40 . An optical waveguide possessing a pattern formed by a patterning method according to  claim 33 .  
   
   
       41 . A storage method for a radiation curable composition according to  claim 26 , wherein the radiation curable composition is stored at a temperature of 0° C. or below.  
   
   
       42 . A radiation curable composition comprising 
 (a) a siloxane resin,    (b) a photoacid generator or photobase generator,    (c) a solvent capable of dissolving component (a) and containing an aprotic solvent, and    (d) a curing acceleration catalyst.    
   
   
       43 . A radiation curable composition comprising 
 (a) a siloxane resin including a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1),    (b) a photoacid generator or photobase generator, and    (c) a solvent capable of dissolving component (a) and containing an aprotic solvent,    wherein the compound represented by the general formula (1) contains a tetraalkoxysilane and a trialkoxysilane.    
   
   
       44 . A radiation curable composition comprising 
 (a) a siloxane resin including a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1 -20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1),    (b) a photoacid generator or photobase generator, and    (c) a solvent capable of dissolving component (a) and containing an aprotic solvent,    wherein the compound represented by the general formula (1) contains a tetraalkoxysilane and a trialkoxysilane and the tetraalkoxysilane contains a tetraethoxysilane.    
   
   
       45 . A radiation curable composition comprising 
 (a) a siloxane resin including a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1),    (b) a photoacid generator or photobase generator, and    (c) a solvent capable of dissolving component (a) and containing an aprotic solvent,    wherein the compound represented by the general formula (1) contains a tetraalkoxysilane and a trialkoxysilane and the trialkoxysilane contains a methyltriethoxysilane.    
   
   
       46 . A radiation curable composition comprising 
 (a) a siloxane resin including a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1 -20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1),    (b) a photoacid generator or photobase generator, and    (c) a solvent capable of dissolving component (a) and containing an aprotic solvent,    wherein a total proportion of the one or more atoms selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms bonding to one Si atom with respect to the Si atom in general formula (1) is from 0.90 to 0.20.    
   
   
       47 . A radiation curable composition comprising 
 (a) a siloxane resin including a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (8):      SiX 4   (8)    wherein X represents a hydrolyzable group,    an oligomer of compounds represented by general formula (8) and/or a partial condensate of compounds represented by general formula (8),    (b) a photoacid generator or photobase generator, and    (c) a solvent capable of dissolving component (a) and containing an aprotic solvent.    
   
   
       48 . A radiation curable composition comprising 
 (a) a siloxane resin including a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (8):      SiX 4   (8)    wherein X represents a hydrolyzable group,    an oligomer of compounds represented by general formula (8) and/or a partial condensate of compounds represented by general formula (8),    the resin containing a resin obtainable by hydrolytic condensation of a compound represented by general formula (8), an oligomer of compounds represented by general formula (8), a partial condensate of compounds represented by general formula (8), a compound represented by the following general formula (1):      R n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 1-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 1-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1),    (b) a photoacid generator or photobase generator, and    (c) a solvent capable of dissolving component (a) and containing an aprotic solvent.    
   
   
       49 . A radiation curable composition comprising 
 (a) a siloxane resin,    (b) a photoacid generator or photobase generator,    (c) a solvent capable of dissolving component (a) and containing an aprotic solvent, and an organic acid or an inorganic acid,    wherein the aprotic solvent includes an ether acetate-based solvent or an ether-based solvent.    
   
   
       50 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2 , without heating of the coating after said exposure step.    
   
   
       51 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2 ,    wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (8):      SiX 4   (8)    wherein X represents a hydrolyzable group,    an oligomer of compounds represented by general formula (8) and/or a partial condensate of compounds represented by general formula (8).    
   
   
       52 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2 ,    wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (8):      SiX 4   (8)    wherein X represents a hydrolyzable group,    an oligomer of compounds represented by general formula (8) and/or a partial condensate of compounds represented by general formula (8), and    wherein said resin obtainable by hydrolytic condensation includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1 -20 organic group, X represents a hydrolyzable group and n represents an integer of 1-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 1-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1).    
   
   
       53 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2 ,    wherein said siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1), and    wherein a total proportion of the one or more atoms selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms bonding to one Si atom with respect to the Si atom of the resin obtainable by hydrolytic condensation is from 0.90 to 0.20.    
   
   
       54 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2 ,    wherein said siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group and includes one or more atoms selected from the group consisting of H, F, N, Si, Ti and C atoms, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1), and    wherein a total proportion of the one or more atoms selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms bonding to one Si atom with respect to the Si atom of the resin obtainable by hydrolytic condensation is from 0.90 to 0.20.    
   
   
       55 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2 ,    wherein said siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1 -20 organic group and includes one or more atoms selected from the group consisting of H, F, N, Si and C atoms, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1), and    wherein a total proportion of the one or more atoms selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms bonding to one Si atom with respect to the Si atom of the resin obtainable by hydrolytic condensation is from 0.90 to 0.20.    
   
   
       56 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2 ,    wherein said siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1 -20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1), and    wherein a total proportion of the one or more atoms selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms bonding to one Si atom with respect to the Si atom of the resin obtainable by hydrolytic condensation is from 0.80 to 0.20.    
   
   
       57 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2 ,    wherein the siloxane resin is soluble in an aprotic solvent containing an ether-based solvent or an ether acetate-based solvent.    
   
   
       58 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin and a photoacid generator onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  without heating of the coating after said exposure step.    
   
   
       59 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  without heating of the coating after said exposure step,    wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1).    
   
   
       60 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2 ,    wherein the siloxane resin is soluble in an aprotic solvent containing an ether-based solvent or an ether acetate-based solvent, and    wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1 -20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1).    
   
   
       61 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin and a photoacid generator onto a substrate and drying the composition to obtain a coating, and    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2 , without heating of the coating after said exposure step,    wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1).    
   
   
       62 . A patterning method comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, without heating of the coating after said exposure step.    
   
   
       63 . A patterning method comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (8):      SiX 4   (8)    wherein X represents a hydrolyzable group,    an oligomer of compounds represented by general formula (8) and/or a partial condensate of compounds represented by general formula (8).    
   
   
       64 . A patterning method comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (8):      SiX 4   (8)    wherein X represents a hydrolyzable group,    an oligomer of compounds represented by general formula (8) and/or a partial condensate of compounds represented by general formula (8), and    wherein said resin obtainable by hydrolytic condensation includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 1-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 1-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1).    
   
   
       65 . A patterning method comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, wherein said siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1), and    wherein a total proportion of the one or more atoms selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms bonding to one Si atom with respect to the Si atom of the resin obtainable by hydrolytic condensation is from 0.90 to 0.20.    
   
   
       66 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, wherein said siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1 -20 organic group and includes one or more atoms selected from the group consisting of H, F, N, Si, Ti and C atoms, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1), and    wherein a total proportion of the one or more atoms selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms bonding to one Si atom with respect to the Si atom of the resin obtainable by hydrolytic condensation is from 0.90 to 0.20.    
   
   
       67 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, wherein said siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group and includes one or more atoms selected from the group consisting of H, F, N, Si and C atoms, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1), and    wherein a total proportion of the one or more atoms selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms bonding to one Si atom with respect to the Si atom of the resin obtainable by hydrolytic condensation is from 0.90 to 0.20.    
   
   
       68 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, wherein said siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R′ may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1), and    wherein a total proportion of the one or more atoms selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti and C atoms bonding to one Si atom with respect to the Si atom of the resin obtainable by hydrolytic condensation is from 0.80 to 0.20.    
   
   
       69 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, wherein the siloxane resin is soluble in an aprotic solvent containing an ether-based solvent or an ether acetate-based solvent.    
   
   
       70 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin and a photoacid generator onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, without heating of the coating after said exposure step.    
   
   
       71 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, without heating of the coating after said exposure step,    wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R′ may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1).    
   
   
       72 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, wherein the siloxane resin is soluble in an aprotic solvent containing an ether-based solvent or an ether acetate-based solvent, and    wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R 1  represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R 1  may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1).    
   
   
       73 . A forming method of a cured film comprising steps of: 
 applying a radiation curable composition containing a siloxane resin and a photoacid generator onto a substrate and drying the composition to obtain a coating,    exposing said coating to irradiation of light at a dose of 5-100 mJ/cm 2  via a mask, and    removing the unexposed sections of said coating by development, without heating of the coating after said exposure step,    wherein the siloxane resin includes a resin obtainable by hydrolytic condensation of a compound represented by the following general formula (1):      R 1   n SiX 4-n   (1)    wherein R′ represents an H or F atom, a group containing a B, N, Al, P, Si, Ge or Ti atom, or a C1-20 organic group, X represents a hydrolyzable group and n represents an integer of 0-2, with the proviso that when n is 2, each R′ may be the same or different, and when n is 0-2, each X may be the same or different,    an oligomer of compounds represented by general formula (1) and/or a partial condensate of compounds represented by general formula (1).

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