Chemical mechanical polishing pad, manufacturing process thereof and chemical mechanical polishing method

Abstract

A chemical mechanical polishing pad having a polishing surface with an arithmetic mean roughness (Ra) of 0.1 to 15 μm, a 10-point height (Rz) of 40 to 150 μm, a core roughness depth (Rk) of 12 to 50 μm and a reduced peak height (Rpk) of 7 to 40 μm, a manufacturing process thereof and a chemical mechanical polishing method. Even when the chemical mechanical polishing of a large-diameter wafer as an object to be polished is carried out by this pad, a polished surface having excellent in-plane uniformity and flatness can be formed.

1 . A chemical mechanical polishing-pad having a polishing surface and a nonpolishing surface, the polishing surface having an arithmetic mean roughness (Ra) of 0.1 to 15 μm, a 10-point height (Rz) of 40 to 150 μm, a core roughness depth (Rk) of 12 to 50 μm and a reduced peak height (Rpk) of 7 to 40 μm.  
   
   
       2 . The chemical mechanical polishing pad according to  claim 1  having a thickness distribution of 50 μm or less.  
   
   
       3 . A process of manufacturing the chemical mechanical polishing pad of  claim 1  or  2 , comprising the steps of: 
 molding a polishing layer; and    sanding at least the surface to be polishing surface of the polishing layer.    
   
   
       4 . A chemical mechanical polishing method comprising chemical mechanical polishing an object to be polished with the chemical mechanical polishing pad of  claim 1  or  2 .