Method of forming trench isolation regions

Abstract

In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and then converted, at least some of the silanol, to a compound including at least one of SiO n and RSiO n , where R includes an organic group. An electrically insulative material is formed over the converted silanol to fill the trench. In another aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A first layer of at least one of Si(OH) x and (CH 3 ) y Si(OH) 4-y is formed to partially fill the trench. At least some of the Si(OH), if present is converted to SiO 2 and at least some of (CH 3 ) y Si(OH) 4-y if present is converted to (CH 3 ) x SiO 2-x . Next, a layer of an electrically insulative material is formed to fill the trench.

1 - 63 . (canceled)  
   
   
       64 . A method of forming a trench isolation region comprising: 
 forming an isolation trench within a bulk semiconductive substrate, the trench having semiconductive sidewalls and a semiconductive base;    forming a first electrically insulative layer within the trench over the sidewalls and the base to less than completely fill the trench;    anisotropically etching the insulative layer effective to expose the semiconductive base;    substantially selectively chemical vapor depositing a second electrically insulative layer onto the semiconductive base and to less than completely fill the trench; and    forming a third electrically insulative layer within the trench over the first and second insulative layers.    
   
   
       65 . The method of  claim 64  wherein the substantially selectively depositing comprises flowing a combination of ozone and TEOS to within the trench effective to deposit silicon dioxide.  
   
   
       66 . The method of  claim 64  wherein the first insulative layer is formed by a thermal oxidation.  
   
   
       67 . The method of  claim 64  wherein the first insulative layer is formed by chemical vapor deposition.  
   
   
       68 . The method of  claim 64  wherein forming the third layer comprises flowing a liquid to within the trench.  
   
   
       69 . The method of  claim 68  wherein the liquid comprises silanol.  
   
   
       70 . The method of  claim 64  wherein the anisotropically etching of the insulative layer is effective to stop on semiconductive material of the base upon its exposure.  
   
   
       71 . A method of forming a trench isolation region comprising: 
 forming an isolation trench within a bulk semiconductive substrate, the trench having semiconductive sidewalls and a semiconductive base;    forming a first electrically insulative layer over the sidewalls and the base to less than completely fill the trench;    flowing a liquid comprising material within the trench to overfill the trench;    solidifying and converting the liquid comprising material to a silicon dioxide comprising material which overfills the trench; and    after the solidifying and the converting, removing the silicon dioxide comprising material received at least outwardly of the trench.    
   
   
       72 . The method of  claim 71  wherein the first insulative layer is formed prior to the flowing.  
   
   
       73 . The method of  claim 71  wherein the first insulative layer is formed after the flowing.  
   
   
       74 . The method of  claim 73  wherein the first insulative layer is formed after the solidifying and the converting.  
   
   
       75 . The method of  claim 71  wherein the removing comprises chemical mechanical polishing.  
   
   
       76 . A method of forming a trench isolation region comprising: 
 etching a shallow isolation trench into a semiconductive substrate, the trench having a first depth and a first width, wherein the ratio of the first depth to the first width defines an aspect ratio;    forming a first layer of material within the trench, the first layer partially filling the trench and lowering the aspect ration and having a first composition; and    converting the first composition to a second composition;    after the converting, forming a second layer of material over the first layer, the second layer essentially filling the trench; and    the etching into the substrate comprising etching to form the trench having sidewalls and a base that define a first depth and a first width and wherein a ratio of the first depth to the first width further defines a first aspect ratio.    
   
   
       77 . The method of  claim 76  further comprising forming a layer of electrically insulative material adjacent the sidewalls and the base, the forming of the layer of electrically insulative material occurring prior to forming the first layer.  
   
   
       78 . The method of  claim 76  further comprising oxidizing the sidewalls and the base, the oxidizing occurring subsequent to forming the first layer.  
   
   
       79 . The method of  claim 76  further comprising forming a silicon oxide comprising layer adjacent the sidewalls and the base, the forming of the silicon oxide comprising layer occurring prior to forming the first layer.  
   
   
       80 . The method of  claim 79  wherein the forming comprises a thermal oxidation of the sidewalls and base.  
   
   
       81 . The method of  claim 80  wherein the thermal oxidation occurs prior to forming the first layer.