Method of forming trench isolation regions

Abstract

In accordance with an aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A silanol layer is formed to partially fill the trench and then converted, at least some of the silanol, to a compound including at least one of SiO n and RSiO n , where R includes an organic group. An electrically insulative material is formed over the converted silanol to fill the trench. In another aspect of the invention, a method of forming a trench isolation region includes forming a trench within a substrate. A first layer of at least one of Si(OH) x and (CH 3 ) y Si(OH) 4-y is formed to partially fill the trench. At least some of the Si(OH) x if present is converted to SiO 2 and at least some of (CH 3 ) y Si(OH) 4-y if present is converted to (CH 3 ) x SiO 2-x . Next, a layer of an electrically insulative material is formed to fill the trench.

1 - 63 . (canceled)  
   
   
       64 . A method of forming a trench isolation region comprising: 
 forming an isolation trench within semiconductive material of a semiconductive substrate;    providing a silicon comprising electrically insulative aspect ratio lowering material within the isolation trench to partially fill the isolation trench, said providing comprising a liquid deposition within the isolation trench; and    after providing the silicon comprising insulative aspect ratio lowering material, depositing an initially solid silicon comprising electrically insulative material within the isolation trench over the insulative aspect ratio lowering material.    
   
   
       65 . The method of  claim 64  wherein the isolation trench comprises sidewall portions, and further comprising forming an oxide layer over the sidewall portions prior to both of the providing and the depositing.  
   
   
       66 . The method of  claim 64  wherein the isolation trench comprises sidewall portions, and further comprising forming an oxide layer over the sidewall portions after both of the providing and the depositing.  
   
   
       67 . The method of  claim 64  wherein the liquid comprises a silanol.  
   
   
       68 . The method of  claim 64  wherein the liquid deposition partially fills the isolation trench with liquid.  
   
   
       69 . The method of  claim 64  wherein the silicon of the aspect ratio lowering material and the insulative material is in silicon dioxide form.  
   
   
       70 . A method of forming a trench isolation region comprising: 
 forming an isolation trench within semiconductive material of a semiconductive substrate;    providing a material of a first composition within the isolation trench which partially fills the isolation trench and lowers an aspect ratio of the isolation trench from what is was prior to said providing;    converting the first composition to a second composition which partially fills the isolation trench and is electrically insulative; and    after the converting, depositing an electrically insulative material within the isolation trench over the converted material.    
   
   
       71 . The method of  claim 70  wherein the material of the first composition is liquid prior to the converting.  
   
   
       72 . The method of  claim 71  wherein the liquid comprises a silanol.  
   
   
       73 . The method of  claim 70  wherein the isolation trench comprises sidewall portions, and further comprising forming an oxide layer over the sidewall portions prior to the providing.  
   
   
       74 . The method of  claim 70  wherein the isolation trench comprises sidewall portions, and further comprising forming an oxide layer over the sidewall portions after the converting.  
   
   
       75 . The method of  claim 70  wherein the isolation trench comprises sidewall portions comprising semiconductive material, and further comprising thermally oxidizing said sidewall portions.  
   
   
       76 . The method of  claim 70  wherein the semiconductive material comprises bulk monocrystalline silicon.  
   
   
       77 . The method of  claim 70  wherein the first composition, the second composition, and the insulative material each comprises silicon.  
   
   
       78 . The method of  claim 77  wherein the silicon of the second composition and the insulative material is in silicon dioxide form.  
   
   
       79 . A method of forming a trench isolation region comprising: 
 etching an isolation trench within semiconductive material of a semiconductive substrate;    forming an oxide layer over sidewall portions of the isolation trench;    after forming the oxide layer, flowing a liquid material to within the isolation trench;    solidifying the liquid material to an electrically insulative solid;    providing the electrically insulative solid to partially fill the isolation trench and reduce an aspect ratio of the isolation trench from what it was prior to the flowing; and    depositing an electrically insulative material to within the isolation trench over the insulative solid within the isolation trench.    
   
   
       80 . The method of  claim 79  wherein the liquid material comprises a silanol.  
   
   
       81 . The method of  claim 79  wherein the providing comprises flowing the liquid material to partially fill the trench.  
   
   
       82 . The method of  claim 79  wherein the solidifying comprises converting the liquid material from a first composition comprising a liquid to a second composition comprising a solid.  
   
   
       83 . The method of  claim 79  wherein the solidifying comprises raising the temperature of the liquid material.