Silver alloy film, flat panel display, and sputtering-target material used for forming the silver alloy film
Abstract
Provided is a silver alloy film for which good properties of corrosion resistance, heat resistance and adhesiveness are required in thin-film electronic components such as a flat panel display, various semiconductor devices, a thin-film sensor and a magnetic head, a display device having the silver alloy film, and a sputtering-target material for forming the silver alloy film. The silver alloy film consists of, by atomic %, 0.1 to 1.0% Si, 0.1 to 0.7% in total of at least one element selected from the group consisting of Cu, Ti and Ge, and the balance of Ag and unavoidable impurities, wherein a total amount of all the additive elements to Ag is not more than 1.5%.
Claims
exact text as granted — not AI-modified1 . A silver alloy film consisting essentially of, by atomic percent, 0.1 to 1.0% Si, 0.1 to 0.7% in total of at least one element selected from the group consisting of Cu, Ti and Ge, and the balance of Ag and unavoidable impurities, wherein a total amount of all the additive elements to Ag is not more than 1.5%.
2 . A silver alloy film according to claim 1 , which is of a wiring film for flat panel displays.
3 . A silver alloy film according to claim 1 , which has a resistivity of 5 μΩcm.
4 . A silver alloy film according to claim 1 , consisting essentially of, by atomic percent, 0.1 to 0.5% Si, 0.1 to 0.4% in total of at least one element selected from the group consisting of Cu, Ti and Ge, and the balance of Ag and unavoidable impurities, wherein a total amount of all the additive elements to Ag is not more than 0.8%.
5 . A silver alloy film according to claim 4 , which is of a wiring film for flat panel displays.
6 . A silver alloy film according to claim 5 , which has a resistivity of 5 μΩcm.
7 . A flat panel display comprising a wiring film made of a silver alloy consisting essentially of, by atomic percent, 0.1 to 1.0% Si, 0.1 to 0.7% in total of at least one element selected from the group consisting of Cu, Ti and Ge, and the balance of Ag and unavoidable impurities, wherein a total amount of all the additive elements to Ag is not more than 1.5%.
8 . A flat panel display according to claim 7 , comprising a wiring film made of a silver alloy consisting essentially of, by atomic percent, 0.1 to 0.5% Si, 0.1 to 0.4% in total of at least one element selected from the group consisting of Cu, Ti and Ge, and the balance of Ag and unavoidable impurities, wherein a total amount of all the additive elements to Ag is not more than 0.8%.
9 . A sputtering-target material used for forming a silver alloy film, consisting essentially of, by atomic percent, 0.1 to 1.0% Si, 0.1 to 0.7% in total of at least one element selected from the group consisting of Cu, Ti and Ge, and the balance of Ag and unavoidable impurities, wherein a total amount of all the additive elements to Ag is not more than 1.5%.
10 . A sputtering-target material according to claim 9 , consisting essentially of, by atomic percent, 0.1 to 0.5% Si, 0.1 to 0.4% in total of at least one element selected from the group consisting of Cu, Ti and Ge, and the balance of Ag and unavoidable impurities, wherein a total amount of all the additive elements to Ag is not more than 0.8%.Join the waitlist — get patent alerts
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