Processing apparatus

Abstract

The temperature of a substrate to be processed on a table can be controlled to be at a desired temperature by using a heating method that simplifies the structure inside the table and requires no special heating arrangement. An electrostatic chuck provided on an upper surface of a susceptor includes an electrode portion formed by a conductive plate or film and a pair of dielectric or insulation sheets sandwiching the electrode portion therebetween. A direct-current voltage from a direct-current power supply is applied to the electrode portion via a feed line for electrostatic absorption. A radio-frequency power supply causes the electrode portion of the electrostatic chuck to heat by resistance heating. This affects the temperature of the semiconductor wafer on the susceptor in the heating method, thereby providing control over its temperature. One output terminal of the radio-frequency power supply is electrically connected to the susceptor via another feed line, while the other output terminal is connected to the ground potential. The radio-frequency power supply outputs radio-frequency radiation of 10 kHz, for example, with a power that is preferably variable and controllable.

1 . A processing apparatus comprising: 
 a processing chamber for providing a processing space in which a predetermined process is performed on a substrate to be processed;    a table on which the substrate is placed in the processing chamber;    a conductor provided inside the table so as to be close to a substrate-placed surface of the table;    a direct-current power supply for applying a direct-current voltage for electrostatic absorption to the conductor via a first feed line;    a radio-frequency power supply, electrically connected at one output terminal to the conductor via a second feed line, for outputting radio-frequency radiation for heating; and    a radio-frequency bypass circuit for cutting off a direct current and allowing the radio-frequency radiation to pass between a predetermined node provided in the middle of the first feed line and the other output terminal of the radio-frequency power supply, wherein    a radio-frequency current output from the radio-frequency power supply flows in a closed circuit including the radio-frequency power supply, the second feed line, the conductor, the first feed line, and the radio-frequency bypass circuit, and Joule heat in the conductor heats the substrate on the table.    
   
   
       2 . The processing apparatus according to  claim 1 , wherein 
 the table comprises:    a conductive body electrically connected to the one output terminal of the radio-frequency power supply via the second feed line; and    an electrostatic chuck provided on the conductive body, the chuck including the conductor and dielectric portions sandwiching the conductor therebetween from upper and lower sides.    
   
   
       3 . The processing apparatus according to  claim 1 , wherein 
 the table comprises a ceramic body including the conductor therein.    
   
   
       4 . A processing apparatus comprising: 
 a processing chamber for allowing plasma to be generated or introduced therein;    a first electrode on which a substrate to be processed is placed in the processing chamber;    an electrostatic chuck that is provided on the first electrode and includes an electrode portion and dielectric portions sandwiching the electrode portion therebetween from upper and lower sides;    a direct-current power supply for applying a direct-current voltage for electrostatic absorption to the electrode portion of the electrostatic chuck via a first feed line;    a first radio-frequency power supply, electrically connected at one output terminal to the first electrode via a second feed line, for outputting first radio-frequency radiation for heating;    a radio-frequency bypass circuit for cutting off a direct current and allowing the first radio-frequency radiation to pass between a first node provided in the middle of the first feed line and the other output terminal of the first radio-frequency power supply;    a second radio-frequency power supply, electrically connected at one output terminal to the first electrode via a third feed line and the second feed line, for outputting second radio-frequency radiation for radio-frequency bias; and    a first filter circuit, provided in the middle of the first feed line so as to be closer to the electrode portion of the electrostatic chuck than the first node, for allowing the direct-current voltage from the direct-current power supply and the first radio-frequency radiation from the first radio-frequency power supply to pass therethrough and cutting off the second radio-frequency radiation from the second radio-frequency power supply, wherein    the first radio-frequency current output from the first radio-frequency power supply flows in a closed circuit including the first radio-frequency power supply, the second feed line, the electrode portion of the electrostatic chuck, the first feed line, the first filter circuit, and the radio-frequency bypass circuit, and Joule heat in the electrode portion of the electrostatic chuck heats the substrate on the table.    
   
   
       5 . The processing apparatus according to  claim 4 , wherein 
 the frequency of the first radio-frequency radiation is lower than the frequency of the second radio-frequency radiation.    
   
   
       6 . The processing apparatus according to  claim 4 , comprising a second filter circuit for allowing the first radio-frequency radiation from the first radio-frequency power supply to pass therethrough and cutting off the second radio-frequency radiation from the second radio-frequency power supply, the second filter circuit being provided in the middle of the second feed line so as to be closer to the one output terminal of the first radio-frequency power supply than a second node at which the third feed line and the second feed line are connected.  
   
   
       7 . The processing apparatus according to  claim 4 , comprising a third filter circuit for allowing the second radio-frequency radiation from the second radio-frequency power supply to pass therethrough and cutting off the first radio-frequency radiation from the first radio-frequency power supply, the third filter circuit being provided in the middle of the third feed line.  
   
   
       8 . The processing apparatus according to  claim 4 , comprising a second electrode arranged in the processing chamber to be opposed to the first electrode with a predetermined space therebetween.  
   
   
       9 . The processing apparatus according to  claim 8 , wherein 
 the second radio-frequency radiation supplied from the second radio-frequency power supply to the first electrode serves as radio-frequency radiation for generating plasma between the first electrode and the second electrode.    
   
   
       10 . The processing apparatus according to  claim 8 , comprising a third radio-frequency power supply for supplying third radio-frequency radiation for generating plasma to the second electrode via a fourth feed line.  
   
   
       11 . The processing apparatus according to  claim 9 , wherein 
 the first filter circuit cuts off the third radio-frequency radiation from the third radio-frequency power supply.    
   
   
       12 . A processing apparatus comprising: 
 a processing chamber for allowing plasma to be generated or introduced therein;    a first electrode on which a substrate to be processed is placed in the processing chamber;    an electrostatic chuck that is provided on the first electrode and includes an electrode portion and dielectric portions sandwiching the electrode portion therebetween from upper and lower sides;    a direct-current power supply for applying a direct-current voltage for electrostatic absorption to the electrode portion of the electrostatic chuck via a first feed line;    a first radio-frequency power supply, electrically connected at one output terminal to the first electrode via a second feed line, for outputting first radio-frequency radiation for heating;    a radio-frequency bypass circuit for cutting off a direct current and allowing the first radio-frequency radiation to pass between a first node provided in the middle of the first feed line and the other output terminal of the first radio-frequency power supply;    a second electrode arranged in the processing chamber to be opposed to the first electrode;    a third radio-frequency power supply for supplying third radio-frequency radiation for plasma generation to the second electrode via a fourth feed line; and    a first filter circuit, provided in the middle of the first feed line so as to be closer to the electrode portion of the electrostatic chuck than the first node, for allowing the direct-current voltage from the direct-current power supply and the first radio-frequency radiation from the first radio-frequency power supply to pass therethrough and cutting off the third radio-frequency radiation from the third radio-frequency power supply, wherein    the first radio-frequency current output from the first radio-frequency power supply flows in a closed circuit including the first radio-frequency power supply, the second feed line, the electrode portion of the electrostatic chuck, the first feed line, the first filter circuit, and the radio-frequency bypass circuit, and Joule heat in the electrode portion of the electrostatic chuck heats the substrate on the table.    
   
   
       13 . The processing apparatus according to  claim 12 , comprising a second filter circuit for allowing the first radio-frequency radiation from the first radio-frequency power supply to pass therethrough and cutting off the third radio-frequency radiation from the third radio-frequency power supply, the second filter circuit being provided in the middle of the second feed line.  
   
   
       14 . A processing apparatus comprising: 
 a processing chamber for providing a processing space in which a predetermined process is performed on a substrate to be processed;    a table on which the substrate is placed in the processing chamber, the table including a dielectric portion;    a first conductor provided inside the table to be close to a substrate-placed surface of the table;    a second conductor provided below the first conductor to be opposed to the first conductor with the dielectric portion partially or entirely sandwiched between the first and second conductors; and    a radio-frequency power supply for applying radio-frequency radiation for heating between the first and second conductors, wherein    the substrate on the table is heated by heat generated by dielectric loss of the dielectric portion to which an electric field of the radio-frequency radiation from the radio-frequency power supply is applied.    
   
   
       15 . The processing apparatus according to  claim 14 , comprising a direct-current power supply for applying a direct-current voltage for electrostatic absorption to the first conductor.