Flip-chip type semiconductor devices and conductive elements thereof

Abstract

A flip-chip type semiconductor device includes at least one conductive element with a plurality of adjacent, mutually adhered regions. The at least one conductive element may include a laterally extending conductive element of the type that reroutes the connection pattern of a semiconductor die or a conductive element that protrudes from a contact pad of the flip-chip type semiconductor device. The at least one conductive element may be formed by programmed material consolidation; e.g., stereolithography. A flip-chip type semiconductor device with one or more conductive elements that are at least partially laterally extending may also include a carrier or other dielectric layer that isolates the conductive elements and their corresponding contact pads from the active surface of a semiconductor die. A protective layer may also cover at least laterally extending portions of such conductive elements. The dielectric layers or protective layers may be formed by programmed material consolidation.

1 . A flip-chip type semiconductor device, comprising: 
 a semiconductor die including at least one bond pad on an active surface thereof;    a contact pad corresponding to the at least one bond pad; and    a conductive element extending between and connecting the at least one bond pad and the contact pad,    at least one of the conductive element and the contact pad including a plurality of adjacent, mutually adhered regions.    
     
     
         2 . The flip-chip type semiconductor device of  claim 1 , wherein the plurality of adjacent, mutually adhered regions comprises a plurality of at least partially superimposed, contiguous, mutually adhered layers comprising conductive material.  
     
     
         3 . The flip-chip type semiconductor device of  claim 1 , further comprising: 
 a carrier by which the contact pad is carried positioned on the active surface of the semiconductor die.    
     
     
         4 . The flip-chip type semiconductor device of  claim 1 , further comprising: 
 a dielectric layer electrically isolating the conductive element and the contact pad from the active surface of the semiconductor die.    
     
     
         5 . The flip-chip type semiconductor device of  claim 4 , wherein the dielectric layer includes a plurality of adjacent, mutually adhered regions.  
     
     
         6 . The flip-chip type semiconductor device of  claim 5 , wherein the plurality of adjacent, mutually adhered layers of the dielectric layer comprises a plurality of at least partially superimposed, mutually adhered, contiguous layers.  
     
     
         7 . The flip-chip type semiconductor device of  claim 4 , wherein the dielectric layer is formed by programmed material consolidation.  
     
     
         8 . The flip-chip type semiconductor device of  claim 7 , wherein the dielectric layer is formed by stereolithography.  
     
     
         9 . The flip-chip type semiconductor device of  claim 1 , further comprising: 
 a protective covering over at least portions of the conductive element.    
     
     
         10 . The flip-chip type semiconductor device of  claim 9 , wherein the contact pads are at least electrically exposed through the protective covering.  
     
     
         11 . The flip-chip type semiconductor device of  claim 9 , wherein the protective covering is formed by programmed material consolidation.  
     
     
         12 . The flip-chip type semiconductor device of  claim 11 , wherein the protective covering is formed by stereolithography.  
     
     
         13 . The flip-chip types semiconductor device of  claim 1 , further comprising: 
 a conductive structure positioned on and protruding from the contact pad.    
     
     
         14 . The flip-chip type semiconductor device of  claim 13 , wherein the conductive structure includes a plurality of adjacent, mutually adhered regions.  
     
     
         15 . The flip-chip type semiconductor device of  claim 14 , wherein the plurality of adjacent, mutually adhered regions comprises a plurality of at least partially superimposed, contiguous, mutually adhered layers comprising conductive material.  
     
     
         16 . The flip-chip type semiconductor device of  claim 1:   wherein the semiconductor die includes a plurality of bond pads; and    comprising a plurality of contact pads that correspond to the bond pads.    
     
     
         17 . The flip-chip type semiconductor device of  claim 16 , wherein the contact pads are disposed in an area array over the active surface of the semiconductor die.  
     
     
         18 . A flip-chip type semiconductor device, comprising: 
 a semiconductor device including at least one contact; and    a conductive element protruding from the at least one contact, a protruding portion of the conductive element including a plurality of adjacent, mutually adhered regions.    
     
     
         19 . The flip-chip type semiconductor device of  claim 18 , wherein the plurality of adjacent, mutually adhered regions comprises a plurality of at least partially superimposed, contiguous, mutually adhered layers.  
     
     
         20 . The flip-chip type semiconductor device of  claim 18 , wherein the semiconductor device comprises a semiconductor die.  
     
     
         21 . The flip-chip type semiconductor device of  claim 18 , comprising a plurality of contact pads.  
     
     
         22 . The flip-chip type semiconductor device of  claim 21 , wherein the contact pads are disposed in an area array.  
     
     
         23 . The flip-chip type semiconductor device of  claim 21 , including a plurality of protruding conductive elements.