Multideposition SACVD reactor

Abstract

There is disclosed a high throughput multideposition SACVD reactor that enables the rapid thermal deposition of dielectric materials such as Si 3 N 4 , SiO 2 , and SiON and non-&electric materials such as polysilicon onto a semiconductor substrate in the same chamber according to the desired sequence. Such a reactor has a processing chamber which is well adapted to single semiconductor wafer processing. The processing chamber includes an improved susceptor to support the wafer and a specific gas distribution system adapted to supply the different gases used in the deposition process and for cleaning. The improved susceptor consists of a standard carbon plate coated with a polysilicon film to protect it against said cleaning gases when they are aggressive to carbon. The present invention also encompasses a method of fabricating said improved susceptor.

1 - 9 . (canceled)  
   
   
       10 . A method of in-situ conditioning a carbon susceptor in a AME Centura reactor to render it NF 3  resistant comprising the steps of: 
 a) placing a standard carbon susceptor in a processing chamber of said reactor;    b) cleaning said chamber interior volume with HCl;    c) purging said interior volume with H 2 ;    d) coating said susceptor bottom with a film of polysilicon using a DCS precursor;    e) purging said interior volume with H 2 ;    f) coating said susceptor top with a film of polysilicon using a SiH 4  precursor;    and    g) purging said interior volume with H 2 .    
   
   
       11 . The method of  claim 10  wherein in the step of coating said carbon susceptor bottom is performed with a lamp power of 26 kW (# 950° C.), for a duration of 540 s, with a DCS flow of about 0.4 slm, with a H 2  flow of about 19 slm, and at a deposition rate of about 300 nm/min.  
   
   
       12 . The method of  claim 11  wherein said bottom polysilicon coating has a thickness of about 4 μm.  
   
   
       13 . The method of  claim 10  wherein in the step of coating said carbon susceptor top is performed at a temperature of about 675° C., with a SiH 4  flow of about 0.5 slm, with a H 2  flow of about 9.5 slm, for a duration of about 400 s, and at a deposition rate of about 150 nm/min.  
   
   
       14 . The method of  claim 13  wherein said top polysilicon coating has a thickness of about 1.5 μm.  
   
   
       15 - 16 . (canceled)  
   
   
       17 . The method of  claim 10  wherein said bottom polysilicon coating has a thickness of about 4 μm and said top polysilicon coating has a thickness of about 1.5 μm.  
   
   
       18 . A method of in-situ conditioning a carbon susceptor in a sub-atmospheric chemical vapor deposition reactor to render it NF 3  resistant, the method comprising the steps of: 
 a) placing said carbon susceptor in a processing chamber of said reactor, said susceptor having a bottom surface and a top surface;    b) cleaning said chamber interior volume with HCl;    c) purging said interior volume with H 2 ;    d) coating said susceptor bottom surface with a film of polysilicon using a DCS precursor, said susceptor bottom film having a first thickness;    e) purging said interior volume with H 2 ;    f) coating said susceptor top surface with a film of polysilicon using a SiH 4  precursor, said susceptor top film having a second thickness which is less than said first thickness; and    g) purging said interior volume with H 2 .    
   
   
       19 . The method of  claim 18  wherein said first thickness is about 4 μm and said second thickness is about 1.5 μm.