Semiconductor wafer, method of manufacturing the same, and method of manufacturing a semiconductor device

Abstract

In a semiconductor wafer including a plurality of element forming regions formed on a front surface of a semiconductor substrate, a scribe line groove is formed along a periphery of the each of the element forming regions, and stoppers are located at an intersection of the scribe line groove, so as to block the scribe line groove.

1 . A semiconductor wafer, comprising: 
 a semiconductor substrate; and    a plurality of element forming regions formed on a front surface of said semiconductor substrate;    wherein a scribe line groove is formed along a periphery of each of said element forming regions; and    a stopper is provided in said scribe line groove, so as to block said scribe line groove.    
   
   
       2 . The semiconductor wafer according to  claim 1 , wherein said scribe line groove is formed in a grid pattern, and said stopper is located at an intersection region of said scribe line groove.  
   
   
       3 . The semiconductor wafer according to  claim 1 , wherein said stopper is formed in a thickness substantially same as the thickness of said element forming region, in a layer stacking direction.  
   
   
       4 . The semiconductor wafer according to  claim 1 , wherein said stopper is formed in a plate shape thinner than a width of said scribe line groove.  
   
   
       5 . The semiconductor wafer according to  claim 1 , wherein said stopper is formed in a same pattern along four sides of each of said plurality of element forming regions.  
   
   
       6 . A method of manufacturing a semiconductor wafer, comprising: 
 forming a scribe line groove on a front surface of a semiconductor substrate on which a plurality of element forming regions is provided along a periphery of each of said element forming regions;    wherein said forming said scribe line groove includes forming a stopper which blocks said scribe line groove, in said scribe line groove.    
   
   
       7 . The method according to  claim 6 , wherein said forming said scribe line groove includes exposing said front surface of said semiconductor substrate, through a reticle formed with an opening at a position corresponding to said scribe line groove and screening a region corresponding to said semiconductor element forming region and said stopper.  
   
   
       8 . The method according to  claim 7 , wherein said forming said scribe line groove includes performing a step exposure so as to form all of said scribe line groove on said semiconductor substrate with a single reticle.  
   
   
       9 . The method according to  claim 6 , further comprising: 
 grinding a back surface of said semiconductor substrate, with all of said front surface of said semiconductor substrate covered with a protection tape.    
   
   
       10 . A method of manufacturing a semiconductor device, comprising: 
 forming an element forming layer including a plurality of element forming regions on a front surface of a semiconductor substrate;    forming a passivation layer on said element forming layer;    selectively removing said passivation layer and forming a scribe line groove along a periphery of each of said element forming regions;    grinding a back surface of said semiconductor substrate with said front surface of said semiconductor substrate covered with a protection tape;    removing said protection tape; and    cutting said semiconductor substrate along said scribe line groove;    wherein said forming said scribe line groove includes forming a stopper which blocks said scribe line groove, in said scribe line groove.    
   
   
       11 . The method according to  claim 10 , wherein said forming said scribe line groove includes selectively removing said element forming layer together with said passivation layer.  
   
   
       12 . The method according to  claim 10 , wherein said forming said scribe line groove includes exposing said front surface of said semiconductor substrate, through a reticle formed with an opening at a position corresponding to said scribe line groove and screening a region corresponding to said semiconductor element forming region and said stopper.  
   
   
       13 . The method according to  claim 10 , wherein said step of forming said scribe line groove includes performing a step exposure so as to form all of said scribe line groove on said semiconductor substrate through a single reticle.