US2005224780A1PendingUtilityA1

Nanowire light emitting device

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Apr 7, 2004Filed: Apr 7, 2005Published: Oct 13, 2005
Est. expiryApr 7, 2024(expired)· nominal 20-yr term from priority
H10H 20/818H10H 20/812H10H 20/813H10D 62/10Y10S977/762B82Y 10/00
48
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Claims

Abstract

A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.

Claims

exact text as granted — not AI-modified
1 . A nanowire light emitting device comprising: a substrate; 
 a first conductive layer formed on the substrate;    a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion;    a light emitting layer between the p-doped portion and the n-doped portion;    a second conductive layer formed on the nanowires; and    an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires,    wherein a color of light emitted from the light emitting layer varies according to the light emitting material.    
     
     
         2 . The device of  claim 1 , wherein the p-doped portion and n-doped portion are doped with dopant atoms when the nanowires are grown or are formed by adsorbing organic molecules onto a surface of the nanowires.  
     
     
         3 . The device of  claim 1 , wherein the light emitting layer comprises a contact boundary between the p-doped portion and the n-doped portion.  
     
     
         4 . The device of  claim 1 , wherein the light emitting layer comprises an undoped intrinsic portion formed between the p-doped portion and the n-doped portion.  
     
     
         5 . The device of  claim 1 , wherein the light emitting material comprises a fluorescent material.  
     
     
         6 . The device of  claim 1 , wherein the light emitting material comprises a dye.  
     
     
         7 . The device of  claim 1 , wherein the light emitting material comprises a quantum dot.  
     
     
         8 . The device of  claim 1 , wherein the insulating polymer in which the embedded light emitting material comprises a colloidal quantum dot.  
     
     
         9 . The device of  claim 1 , further comprising a reflective layer that reflects light emitted from the nanowires.  
     
     
         10 . The device of  claim 9 , wherein the reflective layer is disposed below the first conductive layer, and the substrate and the first conductive layer are light transmitting materials.  
     
     
         11 . The device of  claim 9 , wherein the reflective layer is disposed on the second conductive layer, and the second conductive layer is a transparent electrode.  
     
     
         12 . The device of  claim 2 , wherein the p-doped portion is a portion of the nanowires where molecules having a high electron affinity are adsorbed on the surface of the nanowires.  
     
     
         13 . The device of  claim 12 , wherein the p-doped portion is a portion of the nanowires where molecules containing fluorine are adsorbed.  
     
     
         14 . The device of  claim 13 , wherein the molecules containing fluorine are tetrafluoro-tetracyano-quinodimethane (F4-TCNQ).  
     
     
         15 . The device of  claim 2 , wherein the n-doped portion is a portion of the nanowires where molecules having a low ionization potential are adsorbed on the surface of the nanowires.  
     
     
         16 . The device of  claim 15 , wherein the n-doped portion is a portion of the nanowires where organic electron donor molecules or molecules containing at least one metal selected from the group consisting of lithium, copper, and zinc is adsorbed.  
     
     
         17 . The device of  claim 16 , wherein the n-doped portion is a portion of the nanowires where at least one material selected from the group consisting of copper phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), pentacene, and bis(ethylenddithio)tetrathiafulvalene (BEDT-TTF) is adsorbed.

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