Nanowire light emitting device
Abstract
A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion, a light emitting layer between the p-doped portion and the n-doped portion, a second conductive layer formed on the nanowires, and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires. The color of light emitted from the light emitting layer varies according to the light emitting material.
Claims
exact text as granted — not AI-modified1 . A nanowire light emitting device comprising: a substrate;
a first conductive layer formed on the substrate; a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped portion; a light emitting layer between the p-doped portion and the n-doped portion; a second conductive layer formed on the nanowires; and an insulating polymer in which a light emitting material is embedded, filling a space between the nanowires, wherein a color of light emitted from the light emitting layer varies according to the light emitting material.
2 . The device of claim 1 , wherein the p-doped portion and n-doped portion are doped with dopant atoms when the nanowires are grown or are formed by adsorbing organic molecules onto a surface of the nanowires.
3 . The device of claim 1 , wherein the light emitting layer comprises a contact boundary between the p-doped portion and the n-doped portion.
4 . The device of claim 1 , wherein the light emitting layer comprises an undoped intrinsic portion formed between the p-doped portion and the n-doped portion.
5 . The device of claim 1 , wherein the light emitting material comprises a fluorescent material.
6 . The device of claim 1 , wherein the light emitting material comprises a dye.
7 . The device of claim 1 , wherein the light emitting material comprises a quantum dot.
8 . The device of claim 1 , wherein the insulating polymer in which the embedded light emitting material comprises a colloidal quantum dot.
9 . The device of claim 1 , further comprising a reflective layer that reflects light emitted from the nanowires.
10 . The device of claim 9 , wherein the reflective layer is disposed below the first conductive layer, and the substrate and the first conductive layer are light transmitting materials.
11 . The device of claim 9 , wherein the reflective layer is disposed on the second conductive layer, and the second conductive layer is a transparent electrode.
12 . The device of claim 2 , wherein the p-doped portion is a portion of the nanowires where molecules having a high electron affinity are adsorbed on the surface of the nanowires.
13 . The device of claim 12 , wherein the p-doped portion is a portion of the nanowires where molecules containing fluorine are adsorbed.
14 . The device of claim 13 , wherein the molecules containing fluorine are tetrafluoro-tetracyano-quinodimethane (F4-TCNQ).
15 . The device of claim 2 , wherein the n-doped portion is a portion of the nanowires where molecules having a low ionization potential are adsorbed on the surface of the nanowires.
16 . The device of claim 15 , wherein the n-doped portion is a portion of the nanowires where organic electron donor molecules or molecules containing at least one metal selected from the group consisting of lithium, copper, and zinc is adsorbed.
17 . The device of claim 16 , wherein the n-doped portion is a portion of the nanowires where at least one material selected from the group consisting of copper phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), pentacene, and bis(ethylenddithio)tetrathiafulvalene (BEDT-TTF) is adsorbed.Join the waitlist — get patent alerts
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