US2005221741A1PendingUtilityA1

Polymeric polishing pad having continuously regenerated work surface

Individually held — no corporate assignee on recordPriority: Aug 19, 1992Filed: May 27, 2005Published: Oct 6, 2005
Est. expiryAug 19, 2012(expired)· nominal 20-yr term from priority
B24D 3/32B24B 53/017B29L 2031/736B24B 37/26Y10S438/959B24D 3/28B24B 53/00B29C 70/58B29C 70/66Y10T428/25Y10T428/249972Y10T428/249924Y10T428/268Y10T428/24579Y10T428/24355Y10T428/254Y10T428/2982Y10T428/24479Y10T428/24537Y10T428/24405Y10T428/31591C09K 3/14Y10T428/24372Y10T428/24446Y10T428/2457Y10T428/249954Y10T428/31551C08J 5/00Y10T428/26
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Claims

Abstract

The polishing pad is useful for polishing a surface of an electronic substrate. The pad comprises a polymeric matrix and polymeric microelements within the polymeric matrix. The polymeric microelements have a mean diameter of less than 150 μm (0.0059″). The pad has grooves forming artifacts and a depth less than 2000 times the mean diameter of the polymeric microelements; and the artifacts are spaced apart 0.1 to 10 mm (0.0039″ to 0.39″) and have a width of 1 to 5 mm (0.039″ to 0.20″).

Claims

exact text as granted — not AI-modified
1 . A polishing pad useful for polishing a surface of an electronic substrate, the pad comprising a polymeric matrix and polymeric microelements within the polymeric matrix, the polymeric microelements having a mean diameter of less than 150 μm (0.0059″), the pad having grooves forming artifacts, the grooves having a depth less than 2000 times the mean diameter of the polymeric microelements, and the artifacts being spaced apart 0.1 to 10 mm (0.0039″ to 0.39″) and having a width of 1 to 5 mm (0.039″ to 0.20″).  
     
     
         2 . The polishing pad of  claim 1  wherein the grooves have a depth of 1 to 10 mm (0.039″ to 0.39″).  
     
     
         3 . The polishing pad of  claim 1  wherein the grooves have a depth of 0.635 mm (0.025″).  
     
     
         4 . The polishing pad of  claim 1  wherein the grooves have a width of 0.813 mm (0.032″).  
     
     
         5 . The polishing pad of  claim 1  wherein the grooves are annular.  
     
     
         6 . The polishing pad of  claim 1  wherein the pad is a urethane formed from a liquid urethane.  
     
     
         7 . The polishing pad of  claim 1  wherein the pad is a urethane formed from an isocyanate and at least one of polyfunctional amines, diamines, triamines, and hydroxyl compounds.  
     
     
         8 . A method of forming a semiconductor device, the method including the polishing a surface of an electronic substrate with a polishing pad, the pad comprising a polymeric matrix and polymeric microelements within the polymeric matrix, the polymeric microelements having a mean diameter of less than 150 μm (0.0059″), the pad having grooves forming artifacts, the grooves having a depth less than 2000 times the mean diameter of the polymeric microelements, and the artifacts being spaced apart 0.1 to 10 mm (0.0039″ to 0.39″) and having a width of 1 to 5 mm (0.039″ to 0.20″).  
     
     
         9 . The polishing pad of  claim 8  wherein the grooves have a depth of 1 to 10 mm (0.039″ to 0.39″).  
     
     
         10 . The polishing pad of  claim 8  wherein the grooves have a depth of 0.635 mm (0.025″).  
     
     
         11 . The polishing pad of  claim 8  wherein the grooves have a width of 0.813 mm (0.032″).  
     
     
         12 . The polishing pad of  claim 8  wherein the grooves are annular.  
     
     
         13 . The polishing pad of  claim 8  wherein the pad is a urethane formed from a liquid urethane.  
     
     
         14 . The polishing pad of  claim 8  wherein the pad is a urethane formed from an isocyanate reacted with at least one of polyfunctional amines, diamines, triamines, and hydroxyl compounds.

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