Semiconductor integrated circuit device and production method thereof

Abstract

A CVD device ( 100 ) used for depositing a silicon nitride has a structure in which a hot wall furnace ( 103 ) for thermally degrading a source gas and a chamber ( 101 ) for forming a film over a surface of a wafer ( 1 ) are separated from each other. The hot wall furnace ( 103 ) for thermally degrading the source gas is provided above the chamber ( 101 ), and a heater ( 104 ) capable of setting the inside of the furnace at a high temperature atmosphere of approximately 1200° C. is provided at the outer periphery thereof. The source gas, supplied to the hot wall furnace ( 103 ) through pipes ( 105 ) and ( 106 ), is thermally degraded in this furnace in advance, and degraded components thereof are supplied on a stage ( 102 ) of the chamber ( 101 ) to form a film on the surface of the wafer ( 1 ).

1 - 46 . (canceled)  
   
   
       47 . A semiconductor integrated circuit device comprising: 
 a MISFET formed over a main surface of a semiconductor substrate; and    an insulator covering at least a part of a gate electrode of said MISFET, a main component of the insulator being a silicon nitride formed by a cold wall thermal CVD method,    wherein a concentration of hydrogen contained in said silicon nitride is 2×10 21  atoms/cm 3  or less, and said silicon nitride is an etching stopper film used in forming a contact hole relative to said gate electrode in a self-alignment manner.    
   
   
       48 . The semiconductor integrated circuit device according to  claim 47 , 
 wherein a concentration of hydrogen contained in said silicon nitride is 1×10 21  atoms/cm 3  or less.    
   
   
       49 . The semiconductor integrated circuit device according to  claim 48 , 
 wherein a concentration of hydrogen contained in said silicon nitride is 0.5×10 21  atoms/cm 3  or less.    
   
   
       50 . The semiconductor integrated circuit device according to  claim 47 , 
 wherein said hydrogen is generated by dissociation of a Si—H bond contained in said silicon nitride.    
   
   
       51 . The semiconductor integrated circuit device according to  claim 47 , 
 wherein said silicon nitride is deposited by a CVD method using a source gas containing a silicon type gas, and ammonia or a nitrogen gas.