Semiconductor device and method of forming the same

Abstract

A semiconductor device protecting the ends of a gate line and a method of forming the same are disclosed. The semiconductor device includes a semiconductor substrate, a gate line crossing over the semiconductor substrate, and a protecting pattern covering ends of the gate line. According to the method, a gate line is formed at a semiconductor substrate. A spacer is formed to cover sidewalls of the gate line. A protecting pattern is formed to cover the ends of the gate line. The protecting pattern may be formed of silicon nitride or silicon oxide. Since the protecting pattern protects ends of a gate line, it is possible to prevent gate electrodes from being damaged by a cleaning solution such as SC 1 in a subsequent process.

1 . A method of forming a semiconductor device, comprising: 
 forming a gate line at a semiconductor substrate;    forming a spacer covering sidewalls of the gate line; and    forming a protecting pattern covering ends of the gate line.    
   
   
       2 . The method of  claim 1 , wherein forming a spacer and forming a protecting pattern comprises forming the spacer and forming the protecting pattern simultaneously, wherein the spacer and the protecting pattern are formed of a same material.  
   
   
       3 . The method of  claim 2 , wherein the same material is chosen from the group consisting of silicon nitride and silicon oxide.  
   
   
       4 . The method of  claim 1 , wherein forming the gate line comprises: 
 sequentially stacking an oxide layer and a conductive layer on the semiconductor substrate; and    sequentially patterning the conductive layer and the oxide layer.    
   
   
       5 . The method of  claim 4 , wherein the conductive layer is formed of a metal selected from the group consisting of tungsten, copper, and aluminum.