Stack structure and method of manufacturing the same

Abstract

A stack structure is formed by stacking and bonding a plurality of substrates. The stack structure includes. Bonding films each of which is interposed in a bonding region between, adjacent glass substrates, and bonded to oxygen atoms in the glass of the substrate by anodic bonding.

1 . A stack structure formed by stacking and bonding a plurality of substrates, comprising: 
 a bonding film which is interposed in a bonding region between, of the plurality of substrates, a first substrate and a second substrate containing glass, and bonded to oxygen atoms in the glass of the second substrate by anodic bonding.    
   
   
       2 . A stack structure according to  claim 1 , wherein the bonding film contains a material having one of a metal and an alloy whose melting point is at least 2,000° C. when the bonding film is not bonded to oxygen by anodic bonding.  
   
   
       3 . A stack structure according to  claim 1 , wherein the bonding film has a material containing at least one of Ta, W, Mo, TaSi 2 , WSi 2 , and MoSi 2  when the bonding film is not bonded to oxygen by anodic bonding.  
   
   
       4 . A stack structure according to  claim 1 , further comprising a buffer film which is interposed between the oxidized bonding film and the first substrate and has a resistivity lower than the plurality of substrates.  
   
   
       5 . A stack structure according to  claim 1 , wherein at least one of the first substrate and second substrate has a space in which a chemical reaction occurs.  
   
   
       6 . A stack structure according to  claim 1 , wherein the glass of the second substrate contains alkali alone.  
   
   
       7 . A stack structure according to  claim 1 , wherein the glass of the second substrate is doped with at least one of sodium oxide, lithium oxide, potassium oxide, and lithium carbonate.  
   
   
       8 . A stack structure according to  claim 1 , further comprising a bonding film which is interposed between, of the plurality of substrates, the second substrate and a third substrate containing glass, and bonded to oxygen atoms in the glass of the third substrate by anodic bonding.  
   
   
       9 . A stack structure according to  claim 1 , wherein the first substrate comprises a glass substrate.  
   
   
       10 . A stack structure according to  claim 1 , further comprising a reformer which has, in the plurality of substrates, a space in which a reforming reaction occurs.  
   
   
       11 . A stack structure formed by stacking and bonding a plurality of substrates including at least a glass substrate, comprising: 
 a buffer film which is interposed in a bonding region of the glass substrate of the plurality of substrates and receives an alkali component in the glass substrate, which has moved due to a voltage applied to the glass substrate.    
   
   
       12 . A stack structure according to  claim 11 , wherein the buffer film has a material having a resistivity lower than the glass substrate.  
   
   
       13 . A stack structure according to  claim 11 , wherein the buffer film has an amorphous oxide.  
   
   
       14 . A stack structure according to  claim 11 , wherein at least one of a compound containing Ta, Si, and O as component elements, a compound containing La, Sr, Mn, and O as component elements, and lead glass is used as the buffer film.  
   
   
       15 . A stack structure according to  claim 11 , wherein the buffer film is interposed on an entire bonding surface between the glass substrate and another substrate.  
   
   
       16 . A stack structure according to  claim 11 , further comprising a reformer which has, in the plurality of substrates, a space in which a reforming reaction occurs.  
   
   
       17 . A method of manufacturing stack structure including a plurality of substrates, comprising: 
 executing anodic bonding to bond a bonding film which is interposed between, of the plurality of substrates, a first substrate and a second substrate containing glass to oxygen atoms in the glass of the second substrate.    
   
   
       18 . A stack structure manufacturing method according to  claim 17 , further comprising 
 executing anodic bonding to bond a bonding film which is interposed between, of the plurality of substrates, the second substrate and a third substrate containing glass to oxygen atoms in the glass of the second substrate.    
   
   
       19 . A stack structure manufacturing method according to  claim 18 , wherein a direction of an electric field in anodic bonding between the first substrate and the second substrate is the same as a direction of an electric field in anodic bonding between the second substrate and the third substrate.  
   
   
       20 . A stack structure manufacturing method according to  claim 18 , wherein anodic bonding between the first substrate and the second substrate and anodic bonding between the second substrate and the third substrate are executed separately.  
   
   
       21 . A stack structure manufacturing method according to  claim 18 , wherein anodic bonding between the first substrate and the second substrate and anodic bonding between the second substrate and the third substrate are executed simultaneously.  
   
   
       22 . A stack structure manufacturing method according to  claim 17 , wherein anodic bonding between the first substrate and the second substrate is executed by connecting a positive electrode of an anodic bonding apparatus to the bonding film and a negative electrode of the anodic bonding apparatus to the glass of the second substrate.  
   
   
       23 . A stack structure manufacturing method according to  claim 17 , wherein the bonding film contains a material having one of a metal and an alloy whose melting point is not less than 2,000° C. when the bonding film is not bonded to oxygen by anodic bonding.  
   
   
       24 . A stack structure manufacturing method according to  claim 17 , wherein the bonding film has a material containing at least one of Ta, W, Mo, TaSi 2 , WSi 2 , and MoSi 2  when the bonding film is not bonded to oxygen by anodic bonding.  
   
   
       25 . A method of manufacturing a stack structure including a plurality of substrates, comprising steps of: 
 bringing one surface of a glass substrate of the plurality of substrates into contact with another substrate; and    anodic-bonding the glass substrate to the other substrate in a state in which a buffer film capable of receiving an alkali component in the glass substrate is provided on the other surface of the glass substrate.    
   
   
       26 . A stack structure manufacturing method according to  claim 25 , wherein anodic bonding is executed to make a potential on a side of said one surface of the glass substrate higher than that on a side of said other surface.  
   
   
       27 . A stack structure manufacturing method according to  claim 25 , wherein the buffer film has a material having a resistivity lower than the glass substrate.  
   
   
       28 . A stack structure manufacturing method according to  claim 25 , wherein the buffer film contains an amorphous oxide.  
   
   
       29 . A stack structure manufacturing method according to  claim 25 , wherein at least one of a compound containing Ta, Si, and O as component elements, a compound containing La, Sr, Mn, and O as component elements, and lead glass is used as the buffer film.  
   
   
       30 . A stack structure manufacturing method according to  claim 25 , wherein the buffer film is interposed on an entire bonding surface between the glass substrate and the other substrate.