US2005211563A1PendingUtilityA1
Solution for the electroplating of soft magnetic Co-Fe-Ni alloys
Est. expiryMar 15, 2024(expired)· nominal 20-yr term from priority
C25D 3/562C25D 5/18C25D 5/617
43
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Claims
Abstract
The present invention provides a Co—Fe—Ni plating solution comprising salts of Co, Fe and Ni and a stabilizing agent. The stabilizing agent has at least one citrate salt in an amount effective to act as a stabilizing agent. The present invention also provides a method for forming a thin Co—Fe—Ni alloy plated magnetic film with high saturation magnetization and low coercivity using the citrate-based Co—Fe—Ni plating solution.
Claims
exact text as granted — not AI-modified1 . A Co—Fe—Ni plating solution comprising salts of Co, Fe and Ni and a stabilizing agent, wherein the stabilizing agent comprises at least one citrate salt in an amount effective to act as a stabilizing agent.
2 . The Co—Fe—Ni plating solution according to claim 1 , wherein the Co—Fe—Ni plating solution has a pH greater than or equal to about 3.5.
3 . The Co—Fe—Ni plating solution according to claim 2 , wherein the pH is between about 3.5 and about 8.
4 . The Co—Fe—Ni plating solution according to claim 3 , wherein the pH is about 5.3.
5 . The Co—Fe—Ni plating solution according to claim 1 , wherein the salt of Ni has a concentration in the range of about 0.05M to about 0.4M.
6 . The Co—Fe—Ni plating solution according to claim 1 , wherein the salt of Ni is NiSO 4 .
7 . The Co—Fe—Ni plating solution according to claim 6 , wherein NiSO 4 has a concentration of about 0.3M.
8 . The Co—Fe—Ni plating solution according to claim 1 , wherein the salt of Co has a concentration in the range of about 0.01M to about 0.2M.
9 . The Co—Fe—Ni plating solution according to claim 1 , wherein the salt of Co is CoSO 4 .
10 . The Co—Fe—Ni plating solution according to claim 9 , wherein CoSO 4 has a concentration of about 0.08M.
11 . The Co—Fe—Ni plating solution according to claim 1 , wherein the salt of Fe has a concentration in the range of about 0.005M to about 0.05M.
12 . The Co—Fe—Ni plating solution according to claim 1 , wherein the salt of Fe is FeSO 4 .
13 . The Co—Fe—Ni plating solution according to claim 12 , wherein FeSO 4 has a concentration of about 0.015M.
14 . The Co—Fe—Ni plating solution according to claim 1 , wherein the citrate salt has a concentration in the range of about 0.05M to about 0.4M.
15 . The Co—Fe—Ni plating solution according to claim 1 , wherein the citrate salt is sodium citrate, potassium citrate or ammonium citrate.
16 . The Co—Fe—Ni plating solution according to claim 15 , wherein potassium citrate has a concentration of about 0.206M.
17 . The Co—Fe—Ni plating solution according to claim 15 , wherein ammonium citrate has a concentration of about 0.395M.
18 . The Co—Fe—Ni plating solution according to claim 1 , further comprising a pH buffering agent.
19 . The Co—Fe—Ni plating solution according to claim 18 , wherein the pH buffering agent has a concentration in the range of about 0.1M to about 0.4M.
20 . The Co—Fe—Ni plating solution according to claim 18 , wherein the pH buffering agent is H 3 BO 3 .
21 . The Co—Fe—Ni plating solution according to claim 20 , wherein H 3 BO 3 has a concentration of about 0.4M.
22 . The Co—Fe—Ni plating solution according to claim 1 , further comprising a surfactant.
23 . The Co—Fe—Ni plating solution according to claim 22 , wherein the surfactant has a concentration in the range of about 0.01 g/L to about 0.05 g/L.
24 . The Co—Fe—Ni plating solution according to claim 23 , wherein the surfactant is sodium lauryl sulfate.
25 . The Co—Fe—Ni plating solution according to claim 24 , wherein sodium lauryl sulfate has a concentration of about 0.01 g/L.
26 . A method for forming a thin Co—Fe—Ni alloy plated magnetic film comprising:
(a) providing a substrate to be plated; (b) immersing the substrate in a Co—Fe—Ni plating solution according to claim 1; and (c) applying a plating current.
27 . The method according to claim 26 , wherein the substrate is a Si wafer coated with Ti/Au blanket metallizations, and wherein the substrate has Au as a seed layer for plating.
28 . The method according to claim 26 , wherein the plating current is applied using a method selected from one or more of direct current, pulsed current, pulsed reversed current and pulsed conditioned current.
29 . The method according to claim 28 , wherein the plating current is pulsed current.
30 . The method according to claim 29 , wherein the pulsed current has a duty cycle of 10 ms with 0.3 ms of on-time (t on ) and 9.7 ms of off time.Join the waitlist — get patent alerts
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