Method for cleaning a process chamber

Abstract

Methods and apparatus for cleaning deposition chambers are presented. The cleaning methods include the use of a remote plasma source to generate reactive species from a cleaning gas to clean deposition chambers. A flow of helium or argon may be used during chamber cleaning. Radio frequency power may also be used in combination with a remote plasma source to clean deposition chambers.

1 . A method of cleaning a processing region of a deposition chamber, comprising: 
 striking a plasma at a first power with argon in a remote plasma source connected to the deposition chamber;    introducing a cleaning gas into the remote plasma source;    generating reactive species of the cleaning gas in the remote plasma source;    introducing the cleaning gas and the argon into the processing region; and    removing carbon-doped silicon oxide deposited on interior surfaces of the processing region.    
     
     
         2 . The method of  claim 1 , wherein the carbon-doped silicon oxide is removed from the chamber at a rate of between about 2 μm/minute and about 4 μm/minute.  
     
     
         3 . The method of  claim 1 , wherein the first power is between about 2 kilowatts to about 3 kilowatts.  
     
     
         4 . The method of  claim 3 , further comprising increasing the power to a second power of between about 5 kilowatts to about 8 kilowatts after the plasma is struck.  
     
     
         5 . The method of  claim 1 , wherein the cleaning gas comprises NF 3 .  
     
     
         6 . The method of  claim 1 , wherein the cleaning gas is flowed into the processing region at a rate of between about 500 sccm and about 1500 sccm.  
     
     
         7 . A method of cleaning a processing region of a deposition chamber, comprising: 
 striking a plasma at a first power with argon in a remote plasma source connected to the deposition chamber;    increasing the power to a second power of between about 5 kilowatts to about 8 kilowatts after the plasma is struck;    introducing a cleaning gas comprising NF 3  into the remote plasma source;    generating reactive species of the cleaning gas in the remote plasma source;    introducing the cleaning gas and the argon into the processing region; and    removing carbon-doped silicon oxide deposited on interior surfaces of the processing region.    
     
     
         8 . The method of  claim 7 , wherein the carbon-doped silicon oxide is removed from the chamber at a rate of between about 2 μm/minute and about 4 μm/minute.  
     
     
         9 . The method of  claim 7 , wherein the first power is between about 2 kilowatts to about 3 kilowatts.  
     
     
         10 . The method of  claim 7 , wherein the cleaning gas is flowed into the processing region at a rate of between about 500 sccm and about 1500 sccm.  
     
     
         11 . A method of cleaning a processing region of a deposition chamber, comprising: 
 striking a plasma with argon in a remote plasma source connected to the deposition chamber;    introducing a cleaning gas into the remote plasma source;    generating reactive species of the cleaning gas in the remote plasma source;    introducing the reactive species of the cleaning gas and helium into the processing region; and    removing carbon-doped silicon oxide deposited on interior surfaces of the processing region.    
     
     
         12 . The method of  claim 11 , wherein the cleaning gas is a halogen-containing gas.  
     
     
         13 . The method of  claim 11 , wherein the cleaning gas is a fluorine-containing gas.  
     
     
         14 . The method of  claim 11 , wherein the cleaning gas comprises NF 3 .  
     
     
         15 . The method of  claim 14 , wherein the plasma is sustained at a power of between about 5 kilowatts to about 8 kilowatts after the plasma is struck.  
     
     
         16 . The method of  claim 15 , wherein the reactive species of the cleaning gas are flowed into the processing region at a rate of between about 250 sccm and about 2000 sccm.  
     
     
         17 . The method of  claim 11 , wherein a flow of argon at a flow rate of between about 300 sccm and about 2000 sccm into the remote plasma source is used to strike the plasma.  
     
     
         18 . The method of  claim 11 , wherein the helium is introduced into the processing region from the remote plasma source.