US2005208914A1PendingUtilityA1

High frequency circuit block unit, method for producing same, high frequency module device and method for producing same

Assignee: SONY CORPPriority: Nov 26, 2001Filed: May 23, 2005Published: Sep 22, 2005
Est. expiryNov 26, 2021(expired)· nominal 20-yr term from priority
Inventors:Tsuyoshi Ogawa
H05K 1/0237H05K 3/4614H05K 3/007H05K 1/141H04B 1/52H05K 2203/016H05K 3/4682H05K 1/16H05K 3/4694H05K 2203/061H05K 2201/0352H05K 3/4644H05K 2201/09972H10P 72/7432H10P 72/7424H10P 72/743H10P 72/74H10W 90/736H10W 90/724H10W 72/07251H10W 72/07236H10W 72/877H10W 72/20H10W 70/685H10W 70/05H10W 44/20H10W 42/20H05K 1/11
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Claims

Abstract

A high frequency module device having a high frequency circuit block unit including a passive device. A plural number of unit wiring layers, each formed by an insulating layer, having a passive device unit in its portion, and by a pattern wiring, are layered on a dummy substrate, and are released from the dummy substrate to form the high frequency circuit block unit ( 2 ), which is mounted on a motherboard ( 3 ). The major surfaces of the respective unit wiring layers are planarized. The passive device unit and the pattern wiring, formed on the major surface of each unit wiring layer in the high frequency circuit block unit ( 2 ), can be formed with high accuracy to improve high frequency characteristics. The high frequency circuit block unit ( 2 ) is not in need of a base substrate, thus achieves reduction in size and cost.

Claims

exact text as granted — not AI-modified
1 - 4 . (canceled)  
   
   
       5 . A method for producing a high frequency circuit block unit comprising: a release layer forming step of forming a release layer on a dummy substrate; a layering step of layering a plurality of unit wiring layers on said release layer so that wiring layers of said unit wiring layers, each including a passive device and a connection land unit in a portion thereof, and each formed embedded in the major surface of an insulating layer, are electrically interconnected; a planarizing step of planarizing the major surfaces of said plural unit wiring layers in their entirety; and a substrate removing step of peeling off said plural unit wiring layers from said release layer for removing said dummy substrate and the release layer.  
   
   
       6 . The method for producing the high frequency circuit block unit according to  claim 5  wherein, in said planarizing step, the major surface of each of said plural unit wiring layers is planarized by chemical mechanical polishing.  
   
   
       7 . The method for producing a high frequency circuit block unit according to  claim 5  further comprising, subsequent to said substrate removing step, a semiconductor chip mounting step of mounting a semiconductor chip on the major surface of said plural unit wiring layers neighboring to said release layer and/or on the major surface of the uppermost layer above said release layer, a resin layer forming step of forming a resin layer for covering said semiconductor chip so that said semiconductor chip is partially exposed, and a polishing step of polishing said semiconductor chip and said resin layer.  
   
   
       8 - 11 . (canceled)  
   
   
       12 . A method for producing a high frequency module device comprising: a block unit forming step of forming a high frequency block unit by a release layer forming step of forming a release layer on a dummy substrate, a layering step of layering a plurality of unit wiring layers on said release layer, each of said unit wiring layers including a wiring layer formed embedded in the major surface of an insulating layer, said wiring layer including a passive device and a connection land unit in a portion thereof, said wiring layers of said unit wiring layers being electrically, interconnected, a planarizing step of planarizing the major surfaces of said plural unit wiring layers in their entirety, and a substrate removing step of peeling off said plural unit wiring layers from said release layer for removing said dummy substrate and the release layer, and a block unit mounting step of mounting said high frequency circuit block unit on a major surface of a motherboard, having a connecting portion exposed from a major surface thereof, as said connecting land unit and said connecting portion are electrically interconnected.  
   
   
       13 . The method for producing a high frequency module device according to  claim 12  wherein, in said planarizing step of said block unit forming step, the major surfaces of said plural unit wiring layers are each planarized by chemical-mechanical polishing.  
   
   
       14 . The method for producing a high frequency module device according to  claim 12  wherein, in said block unit forming step, said high frequency circuit block unit is formed by executing, subsequent to said substrate removing step, a semiconductor chip mounting step of mounting a semiconductor chip on the major surface of said plural unit wiring layers neighboring to said release layer and/or on the major surface of the uppermost layer above said release layer, a resin layer forming step of forming a resin layer for covering said semiconductor chip so that said semiconductor layer is partially exposed, and a polishing step of polishing said semiconductor chip and said resin layer.

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