High frequency power amplifier module and wireless communication apparatus

Abstract

The number of components of a high frequency power amplifier is reduced. A bias resistance ratio is adjusted in accordance with a change in the threshold voltage Vth of a transistor. A high frequency power amplifier has a plurality of amplifying systems. Each of these systems has an input terminal to which a signal to be amplified is supplied, an output terminal, a bias terminal, a plurality of amplifying stages which are sequentially cascaded between the input and output terminals, and a bias circuit connected to the bias terminal and each of the amplifying stages to apply a bias potential to the amplifying stage. The amplifying stage includes a control terminal for receiving an input signal and the bias potential supplied to the stage and a first terminal for transmitting an output signal of the stage.

1 - 14 . (canceled)  
   
   
       15 . A high frequency power amplifier circuit device which is monolithically formed on a single semiconductor substrate, comprising: 
 an input terminal which receives a signal to be amplified;    an output terminal;    a control terminal which receives a control signal;    a high frequency power amplifier which includes a plurality of amplifying stages that are sequentially cascaded between the input terminal and the output terminal; and    a bias circuit which includes a plurality of resistance elements and bonding portions that are coupled with the resistance elements and which generates the bias voltages for the amplifying stages according to the control signal;    wherein the bias voltages are determined by combinations of the plurality of resistance elements and wherein the combinations of the plurality of resistance elements are arranged by coupling with the bonding portions.    
   
   
       16 . A high frequency power amplifier circuit device according to  claim 15 , wherein the bonding portions are connected by bonding wires.  
   
   
       17 . A high frequency power amplifier circuit device according to  claim 16 , the high frequency power amplifier module further comprising a second high frequency power amplifier which includes amplifying system having a plurality of amplifying stages that are sequentially cascaded and wherein the bias signals are supplied from the bias circuit.  
   
   
       18 . A high frequency power amplifier module having a high frequency power amplifier circuit device which is monolithically formed on a single semiconductor substrate, comprising: 
 an input terminal which receives a signal to be amplified;    an output terminal;    a control terminal which receives a control signal;    a high frequency power amplifier which includes a plurality of amplifying stages that are sequentially cascaded between the input terminal and the output terminal; and    a bias circuit which includes a plurality of resistance elements and bonding portions that are coupled with the resistance elements and which generates the bias voltages for the amplifying stages according to the control signal;    wherein the bias voltages are determined by combinations of the plurality of resistance elements and wherein the combinations of the plurality of resistance elements are arranged by coupling with the bonding portions.    
   
   
       19 . A high frequency power amplifier module according to  claim 18 , wherein the bonding portions are connected by bonding wires.  
   
   
       20 . A high frequency power amplifier module according to  claim 19 , the high frequency power amplifier module further comprising a second high frequency power amplifier which includes amplifying system having a plurality of amplifying stages that are sequentially cascaded and wherein the bias signals are supplied from the bias circuit.