EFAB methods including controlled mask to substrate mating

Abstract

Embodiments include treatment of substrates, formation of structures, and formation of multilayer structures using contact masks where a controlled mating of the contact masks and substrates is used. Some embodiments involve controlled mating at speeds equal to or less than 10 microns/second, more preferably equal to or less than 5 microns/second, and even more preferably equal to or less than 1 micron/second. Some embodiments involve controlled mating that uses a higher speed of approach when further away followed by a slower speed of approach to cause mating. Some embodiments involve controlled mating that uses a higher speed of approach when making preliminary contact, then backing away a desired distance, and then making a mating approach that causes mating while using a slower mating speed.

1 . A process for forming a multilayer three-dimensional structure, comprising: 
 (a) forming and adhering a layer of material to a substrate, wherein the substrate may include one or more previously formed layers;    (b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;    wherein the formation of each of at least a plurality of layers, comprises: 
 (1) obtaining a selective pattern of deposition of a first material having at least one void, comprising at least one of: 
 (a) selectively depositing a first material onto the substrate such that at least one void remains, wherein the depositing comprises: 
 (i) bringing a mating surface of a contact mask and a mating surface of the substrate together using a relative speed, just prior to contact, which is less than a speed used in moving the mating surfaces closer together when the surfaces are farther apart;  
 (ii) depositing the first material onto the substrate with the contact mask in place;  
 (iii) separating the contact mask and the substrate to expose the at least one void; or  
 
 (b) depositing a first material onto the substrate and selectively etching the deposit of the first material to form at least one void therein, wherein the etching comprises: 
 (i) bringing a mating surface of a contact mask and a mating surface of the deposited first material or of the substrate together using a relative speed, just prior to contact, which is less than a speed used in moving the mating surfaces closer together when they are farther apart;  
 (ii) etching into the first material with the contact mask in place to form at least one void; and  
 (iii) separating the contact mask and the first material.  
 
 
   
     
     
         2 . The process of  claim 1  wherein the formation of each of a plurality of layers additionally comprises at least one planarization operation.  
     
     
         3 . The process of  claim 1  wherein the formation of each of a plurality of layers additionally comprises deposition of at least a second material.  
     
     
         4 . A process for forming a multilayer three-dimensional structure, comprising: 
 (a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers;    (b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;    wherein the formation of each of at least a plurality of layers, comprises: 
 (1) obtaining a selective pattern of deposition of a first material having at least one void, comprising at least one of: 
 (a) selectively depositing a first material onto the substrate such that at least one void remains, wherein the depositing comprises: 
 (i) bringing a mating surface of a contact mask and a mating surface of the substrate into actual or proximal contact while moving at a first relative speed; and thereafter  
 (ii) separating the mating surface of the contact mask and the mating of the substrate by a distance; and thereafter  
 (iii) bringing the mating surface of a contact mask and a mating surface of the substrate together using a second relative speed, just prior to contact, when moving the mating surfaces closer together in preparation for depositing a first material, wherein the second relative speed is less than the first relative speed;  
 (iv) depositing the first material onto the substrate with the contact mask in place;  
 (v) separating the contact mask and the substrate to expose the at least one void; or  
 
 (b) depositing a first material onto the substrate and selectively etching the deposit of the first material to form at least one void therein, wherein the etching comprises: 
 (i) bringing a mating surface of a contact mask and a mating surface of the first material into actual or proximal contact while moving at a first relative speed; and thereafter  
 (ii) separating the mating surface of the contact mask and the mating surface of the first material by a distance; and thereafter  
 (iii) bringing the mating surface of the contact mask and a mating surface of the first material together using a second relative speed just prior to contact when moving the mating surfaces closer together in preparation for etching into the first material, wherein the second relative speed is less than the first relative speed;  
 (iv) etching into the first material with the contact mask in place to form at least one void; and  
 (v) separating the contact mask and the first material.  
 
 
   
     
     
         5 . The process of  claim 4  wherein the formation of each of a plurality of layers additionally comprises at least one planarization operation.  
     
     
         6 . The process of  claim 4  wherein the formation of each of a plurality of layers additionally comprises deposition of at least a second material.  
     
     
         7 . A process for forming a multilayer three-dimensional structure, comprising: 
 (a) forming and adhering a layer of material to a substrate, wherein the substrate may include previously formed layers;    (b) repeating the forming and adhering operation of (a) a plurality of times to build up a three-dimensional structure from a plurality of adhered layers;    wherein the formation of each of at least a plurality of layers, comprises: 
 (1) obtaining a selective pattern of deposition of a first material having at least one void, comprising at least one of: 
 (a) selectively depositing a first material onto the substrate such that at least one void remains, wherein the depositing comprises: 
 (i) bringing a mating surface of a contact mask and a mating surface of the substrate together using a relative speed that is not greater than about ten microns per second, just prior to contact, when moving the mating surfaces closer together in preparation for depositing a first material;  
 (ii) depositing the first material onto the substrate with the contact mask in place;  
 (iii) separating the contact mask and the substrate to expose the at least one void; or  
 
 (b) depositing a first material onto the substrate and selectively etching the deposit of the first material to form at least one void therein, wherein the etching comprises: 
 (i) bringing a mating surface of a contact mask and a mating surface of the deposited first material together using a relative speed that is not greater than about ten microns per second, just prior to contact, when moving the mating surfaces closer together in preparation for etching into the first material;  
 (ii) etching into the first material with the contact mask in place to form at least one void; and  
 (iii) separating the contact mask and the first deposited material.  
 
 
   
     
     
         8 . The process of  claim 7  wherein the relative speed is not greater than about five microns per second.  
     
     
         9 . The process of  claim 7  wherein the relative speed is not greater than about one micron per second.  
     
     
         10 . The process of  claim 7  wherein the formation of a plurality of layers additionally comprises at least one planarization operation.  
     
     
         11 . The process of  claim 7  wherein the formation of each of a plurality of layers additionally comprises deposition of at least a second material.